MG50J Search Results

MG50J2YS1

Abstract: IGBT MG50J2YS1
Contextual Info: GTR MODULE SILICON N CHANNEL IGBT MG50J2YS1 HIGH PO WER S W I T C H I N G APPL I CA TI ON S . M O T O R C ON T RO L A P PL IC A TI ON S. . High Input Impedance . High Speed : t f=0.3 5 / j s Max. trr=0. 25|is(May.) . Low Saturation Voltage : VCE(sat)=4•0V(Max.)

Contextual Info: TOSHIBA MG50J1BS11 TO SH IBA GTR M O D U LE SILICON N CHANNEL IGBT MG50J1 BS11 HIGH PO W E R SWITCHING APPLICATIONS. Unit in mm M O TOR CONTROL APPLICATIONS. High Input Impedance High Speed : tf=1.0/^s M ax. (Ic = 50A) Low Saturation Voltage : VçE(sat) = 2-TV (Max.) (I<2= 50A)

1ZS40

Abstract: ft05d
Contextual Info: T O SH IB A MG50J1ZS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50J1 ZS40 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. B2 • High Input Impedance • H ighSpeed • Low Saturation Voltage 2 -FAST-ON-TAB #110 : tf=0.35,«s Max.

P channel 50A IGBT

Contextual Info: TOSHIBA MG50J6ES50 TO SH IBA GTR M O D ULE SILICON N CHANNEL IGBT MG50J6ES50 HIGH P O W E R SWITCHING APPLICATIONS. Unit in mm M O TO R CONTROL APPLICATIONS. • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package.

2-33F1A

Abstract: MG50J1BS11 253H tcp 8005 CS630
Contextual Info: MG50J1BS11 TOSHIBA MG5 0 J 1 BS 1 1 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. High Input Impedance High Speed : tf= 1.0/^s Max. (I0 = 5OA) Low Saturation Voltage : VCE(sat)= 2.7V (Max.) (I0 = 5OA)

MG50J2YS50

Abstract: td 4950
Contextual Info: MG50J2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG50J2YS50 High Power Switching Applications Motor Control Applications Unit: mm The electrodes are isolated from case. High input impedance. Includes a complete half bridge in one package. Enhancement-mode.

Contextual Info: T O SH IB A MG50J1ZS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50J1 ZS40 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. B2 • • 2 -FAST-ON-TAB #110 High Input Impedance H ighSpeed : tf=0.35,«s Max. trr = 0.15^8 (Max.) Low Saturation Voltage

igbt toshiba mg

Abstract: MG50J1ZS40 ZS40
Contextual Info: TOSHIBA MG50J1ZS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50J1 ZS40 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. B2 • • • 2 -FAST-O N-TAB # 1 1 0 High Input Impedance High Speed : tf= 0.35/^s Max. trr = 0.15,«s (Max.)

td 4950

Abstract: MG50J6ES50
Contextual Info: TOSHIBA M G50J6ES50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50J6ES50 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • • • 4-0 5.5 ± 0.3 7-M4 The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package.

mg50j2ys40

Abstract: IGBT MG50J2YS40 TOSHIBA IGBT mg50 toshiba MG50 YS40 2YS40 ALY TRANSISTOR MG50 pmp 4000 transistor ALY
Contextual Info: TOSHIBA GTR MODULE SEMICONDUCTOR TOSHIBA TECHNICAL M G 50J 2YS40 DATA SILICON N CHANNEL IGBT MG50J2YS40 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • • • l!X 3 - M5 High Input Impedance Highspeed : tf—0.35//S(Max.)

Contextual Info: T O SH IB A MG50J6ES50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50J6ES50 HIGH PO W ER SWITCHING APPLICATIONS. U nit in mm MOTOR CONTROL APPLICATIONS. • The Electrodes are Isolated from Case. • High Input Impedance. • 6 IGBTs B uilt Into 1 Package.

MG50J6ES50

Abstract: on semiconductor 50-5G
Contextual Info: MG50J6ES50 TOSHIBA GTR Module Silicon N Channel IGBT MG50J6ES50 Unit: mm High Power Switching Applications Motor Control Applications The electrodes are isolated from case. High input impedance. 6 IGBTs built into 1 package. Enhancement-mode. High speed : tf = 0.30µs Max. (IC = 50A)

MG50J2YS50

Contextual Info: MG50J2YS50 HIGH PO W ER SW IT C H IN G A PPLICA TIO N S. U nit in mm M O T O R C O N T R O L APPLICA TIO N S. 4-FAST - ON-TAB *110 • The Electrodes are Isolated from Case. • High Input Impedance • Includes a Complete H alf Bridge in One Package. •

Contextual Info: T O SH IB A MG50J2YS50 MG50J2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 4 -F A S T -O N -T A B # 1 1 0 • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One

Contextual Info: TOSHIBA MG50J1ZS40 T O S H IB A GTR M O D U L E SILICO N N C H A N N E L IGBT M G 5 0 J 1 ZS40 H IGH P O W E R SW IT C H IN G APPLICATIO N S. U n it in mm M O T O R C O N T R O L APPLICATIO N S. B2 2 -FAST-O N -TAB 2- • H igh In p u t Impedance • H ig h s p e e d

MG50J6ES50

Contextual Info: MG50J6ES50 U n it in mm H IG H P O W E R S W IT C H IN G A P P L IC A T IO N S. M O T O R C O N T R O L A P P L IC A T IO N S. • The Electrodes are Isolated from Case. • High Input Impedance. • 6 IGBTs B uilt Into 1 Package. • Enhancement-Mode. •

Contextual Info: MG50J1ZS40 H IG H P O W E R S W IT C H IN G A P P L IC A T IO N S. M O T O R C O N T R O L A P P L IC A T IO N S . • • • H igh In p ut Im pedance H igh Speed : tf= 0.35//s M ax. trr = 0.15//S (Max.) Low S aturation Voltage • • Enhancem ent-M ode

MG50J1ZS40

Contextual Info: MG50J1ZS40 TOSHIBA GTR Module Silicon N Channel IGBT MG50J1ZS40 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.35µs max trr = 0.15µs (max) Low saturation voltage : VCE(sat) = 3.5V (max) Enhancement-mode

MG50J2YS50

Abstract: transistor te 2305 mg50j V20-H IGBT MG50J2YS50
Contextual Info: TOSHIBA MG50J2YS50 MG50J2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 4-FA ST -O N -TA B # 110 The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One

Contextual Info: T O SH IB A MG50J1BS11 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 5 0 J 1 BS1 1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. U nit in mm • High Input Impedance • H ig h S p e e d • Low Saturation Voltage : VQE sa t = 2.7V (Max.) (Iq = 50A)

MG50J6ES1

Abstract: 35fj FL300
Contextual Info: MG50J6ES1 GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . The Electrodes are Isolated from Case . 6 IGBTs are Built Into 1 Package. . Enhancement-Mode . Low Saturation Voltage : VCE sat =4.0V(Max.) . High Speed : tf=0. 35fJs(Max.)

Contextual Info: TOSHIBA MG50J2YS50 TO SH IBA GTR M O D ULE SILICON N CHANNEL IGBT MG50J2YS50 HIGH P O W E R SW ITCHING APPLICATIONS. U n it in m m M O TO R CONTROL APPLICATIONS. 4 -F A S T -O N -T A B • T h e E le ctro d es are Iso la te d from C ase. • H ig h I n p u t Im p ed an ce

Contextual Info: TO SHIBA MG50J1BS11 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 5 0 J 1 BS1 1 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • High Input Impedance • H ighSpeed • Low Saturation Voltage : VQE sat = 2.7V (Max.) (Iq = 50A)

Contextual Info: T O SH IB A MG50J2YS50 MG50J2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 4 -F A S T -O N -T A B # 1 1 0 • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One