MG50J Search Results
MG50J Datasheets (29)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| MG50J1BS11 | Toshiba | TRANS IGBT MODULE N-CH 600V 50A 3(2-33F2A) | Original | 372.44KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MG50J1BS11 | Unknown | Catalog Scans - Shortform Datasheet | Scan | 55.62KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MG50J1BS11 | Toshiba | N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) | Scan | 213.47KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MG50J1ZS40 | Toshiba | TRANS IGBT MODULE N-CH 600V 50A 5(2-94D2A) | Original | 196.71KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MG50J1ZS40 | Toshiba | Silicon N-channel IGBT GTR module for high power switching, motor control applications | Original | 391.82KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MG50J1ZS40 | Toshiba | N channel IGBT | Original | 394.92KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MG50J1ZS40 | Toshiba | GTR Module Silicon N Channel IGBT | Scan | 255.99KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MG50J1ZS50 | Toshiba | 600V 50A IGBT Chopper Module | Scan | 215.04KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MG50J2YS1 | Unknown | Catalog Scans - Shortform Datasheet | Scan | 55.62KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MG50J2YS1 | Unknown | Catalog Scans - Shortform Datasheet | Scan | 51.97KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MG50J2YS50 | Toshiba | TRANS IGBT MODULE N-CH 600V 50A 7(2-94D1A) | Original | 229.67KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MG50J2YS50 | Toshiba | Silicon N-channel IGBT GTR module for high power switching, motor control applications | Original | 473.75KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MG50J2YS50 | Toshiba | GTR Module Silicon N Channel IGBT | Scan | 301.6KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MG50J2YS50 | Toshiba | GTR Module - Silicon N-Channel IGBT | Scan | 303.47KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MG50J2YS50(AC:G) | Toshiba | TRANS IGBT MODULE N-CH 600V 50A 7GTR MODULE | Original | 229.67KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MG50J2YS9 | Unknown | Catalog Scans - Shortform Datasheet | Scan | 55.62KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MG50J2YS9 | Unknown | Catalog Scans - Shortform Datasheet | Scan | 51.97KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MG50J2YS91 | Unknown | Catalog Scans - Shortform Datasheet | Scan | 55.62KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MG50J2YS91 | Unknown | Catalog Scans - Shortform Datasheet | Scan | 54.17KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MG50J6EL1 | Unknown | Catalog Scans - Shortform Datasheet | Scan | 45.37KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MG50J Price and Stock
Toshiba America Electronic Components MG50J2YS91 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MG50J2YS91 | 66 | 1 |
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MG50J2YS91 | 52 |
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Toshiba America Electronic Components MG50J2YS9 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MG50J2YS9 | 39 | 1 |
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MG50J2YS9 | 31 |
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Toshiba America Electronic Components MG50J2YS1 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MG50J2YS1 | 2 | 1 |
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MG50J2YS1 | 1 |
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Toshiba America Electronic Components MG50J2YS40 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MG50J2YS40 | 1 | 1 |
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MG50J2YS40 | 3 |
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| MG50J2YS40 | 1 |
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MG50J Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
MG50J2YS1
Abstract: IGBT MG50J2YS1
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OCR Scan |
mg50j2ys1igbt mg50j2ys1 | |
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Contextual Info: TOSHIBA MG50J1BS11 TO SH IBA GTR M O D U LE SILICON N CHANNEL IGBT MG50J1 BS11 HIGH PO W E R SWITCHING APPLICATIONS. Unit in mm M O TOR CONTROL APPLICATIONS. High Input Impedance High Speed : tf=1.0/^s M ax. (Ic = 50A) Low Saturation Voltage : VçE(sat) = 2-TV (Max.) (I<2= 50A) |
OCR Scan |
mg50j1bs11mg50j1volta0j1bs1150//s+1 | |
1ZS40
Abstract: ft05d
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OCR Scan |
mg50j1zs40mg50j12-94d2amg50j+2 | |
P channel 50A IGBTContextual Info: TOSHIBA MG50J6ES50 TO SH IBA GTR M O D ULE SILICON N CHANNEL IGBT MG50J6ES50 HIGH P O W E R SWITCHING APPLICATIONS. Unit in mm M O TO R CONTROL APPLICATIONS. • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. |
OCR Scan |
mg50j6es5015jus2-94a2ap channel 50a igbt | |
2-33F1A
Abstract: MG50J1BS11 253H tcp 8005 CS630
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OCR Scan |
mg50j1bs11mg50j12-33f1a253h+2 | |
MG50J2YS50
Abstract: td 4950
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Original |
mg50j2ys502-94d1atd 4950 | |
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Contextual Info: T O SH IB A MG50J1ZS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50J1 ZS40 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. B2 • • 2 -FAST-ON-TAB #110 High Input Impedance H ighSpeed : tf=0.35,«s Max. trr = 0.15^8 (Max.) Low Saturation Voltage |
OCR Scan |
mg50j1zs40mg50j12-94d2amg50j+1 | |
igbt toshiba mg
Abstract: MG50J1ZS40 ZS40
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OCR Scan |
mg50j1zs40mg50j12-94d2arg-51f2+2 | |
td 4950
Abstract: MG50J6ES50
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OCR Scan |
mg50j6es50g50j6es502-94a2a961001eaa2+1 | |
mg50j2ys40
Abstract: IGBT MG50J2YS40 TOSHIBA IGBT mg50 toshiba MG50 YS40 2YS40 ALY TRANSISTOR MG50 pmp 4000 transistor ALY
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OCR Scan |
2ys40mg50j2ys4035//s2-94d1a+9 | |
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Contextual Info: T O SH IB A MG50J6ES50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50J6ES50 HIGH PO W ER SWITCHING APPLICATIONS. U nit in mm MOTOR CONTROL APPLICATIONS. • The Electrodes are Isolated from Case. • High Input Impedance. • 6 IGBTs B uilt Into 1 Package. |
OCR Scan |
mg50j6es502-94a2a961001eaa2100//s | |
MG50J2YS50
Abstract: MG50J2 td 4950 IGBT MG50J2YS50
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Original |
mg50j2ys50pw03070796mg50j2td 4950+1 | |
MG50J1BS11Contextual Info: MG50J1BS11 TOSHIBA IGBT Module Silicon N Channel IGBT MG50J1BS11 High Power Switching Applications Motor Control Applications Unit: mm Enhancement-mode The electrodes are isolated from case. Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33F2A Maximum Ratings Ta = 25°C |
Original |
mg50j1bs112-33f2a | |
TOSHIBA IGBTContextual Info: TOSHIBA MG50J1BS11 TOSHIBA GTR MODULE M SILICON N CHANNEL IGBT r: ^ n 1 1 R <; 1 1 HIGH PO W ER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. High Input Impedance High Speed tf—1 . 0 / ' S Max. (Içj —5 0 A) Low Saturation Voltage : V cE(sat) = 2*7V (Max.) (Iq = 50A) |
OCR Scan |
mg50j1bs11toshiba igbt | |
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MG50J2YS50Contextual Info: MG50J2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG50J2YS50 High Power Switching Applications Motor Control Applications Unit: mm l The electrodes are isolated from case. l High input impedance. l Includes a complete half bridge in one package. l Enhancement-mode. |
Original |
mg50j2ys502-94d1a | |
MG50J6ES50
Abstract: on semiconductor 50-5G
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Original |
mg50j6es502-94a2a000707eaa1on semiconductor 50-5g | |
MG50J2YS50Contextual Info: MG50J2YS50 HIGH PO W ER SW IT C H IN G A PPLICA TIO N S. U nit in mm M O T O R C O N T R O L APPLICA TIO N S. 4-FAST - ON-TAB *110 • The Electrodes are Isolated from Case. • High Input Impedance • Includes a Complete H alf Bridge in One Package. • |
OCR Scan |
mg50j2ys5015//s2-94d1a | |
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Contextual Info: T O SH IB A MG50J2YS50 MG50J2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 4 -F A S T -O N -T A B # 1 1 0 • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One |
OCR Scan |
mg50j2ys502-94d1a100//s | |
MG50J6EL1
Abstract: darlington NPN 600V 50a transistor LF50A hFE-80
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OCR Scan |
mg50j6el1darlington npn 600v 50a transistorlf50ahfe-80 | |
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Contextual Info: TOSHIBA MG50J1ZS40 T O S H IB A GTR M O D U L E SILICO N N C H A N N E L IGBT M G 5 0 J 1 ZS40 H IGH P O W E R SW IT C H IN G APPLICATIO N S. U n it in mm M O T O R C O N T R O L APPLICATIO N S. B2 2 -FAST-O N -TAB 2- • H igh In p u t Impedance • H ig h s p e e d |
OCR Scan |
mg50j1zs4035//s15/is | |
MG50J1ZS40Contextual Info: MG50J1ZS40 TOSHIBA GTR Module Silicon N Channel IGBT MG50J1ZS40 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.35µs max trr = 0.15µs (max) l Low saturation voltage : VCE(sat) = 3.5V (max) |
Original |
mg50j1zs402-94d2a | |
MG50J6ES50Contextual Info: MG50J6ES50 U n it in mm H IG H P O W E R S W IT C H IN G A P P L IC A T IO N S. M O T O R C O N T R O L A P P L IC A T IO N S. • The Electrodes are Isolated from Case. • High Input Impedance. • 6 IGBTs B uilt Into 1 Package. • Enhancement-Mode. • |
OCR Scan |
mg50j6es5015/js | |
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Contextual Info: MG50J1ZS40 H IG H P O W E R S W IT C H IN G A P P L IC A T IO N S. M O T O R C O N T R O L A P P L IC A T IO N S . • • • H igh In p ut Im pedance H igh Speed : tf= 0.35//s M ax. trr = 0.15//S (Max.) Low S aturation Voltage • • Enhancem ent-M ode |
OCR Scan |
mg50j1zs4035//s15//s | |
MG50J1ZS40Contextual Info: MG50J1ZS40 TOSHIBA GTR Module Silicon N Channel IGBT MG50J1ZS40 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.35µs max trr = 0.15µs (max) Low saturation voltage : VCE(sat) = 3.5V (max) Enhancement-mode |
Original |
mg50j1zs402-94d2a | |