MG50 Search Results

3 phase ac sinewave phase inverter single ic

Abstract: U5J diode
Contextual Info: MG50Q2YS40 Unit in mm HIGH POW ER SWITCHING APPLICATIONS. M O TO R CONTROL APPLICATIONS. • • • • • • High Input Impedance High Speed tf=0.5/is M ax. trr = 0.5//s(Max.) Low Saturation Voltage : v CE(sat) =4.0V(Max.) Enhancement-Mode Includes a Complete Half Bridge in One

MG50G2CL3

Abstract: Mg50G2cl mg50g2
Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG50G2CL3 HIGH POWER SWITCHING APPLICATIONS. Unit in ram MOTOR CONTROL APPLICATIONS. FEATURES : . The Collector Is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-In to 1 Package. . High DC Current Gain: hFE=100 Min. (Ic=50A)

MG50H2YS1

Contextual Info: MG50H2YS1 GTR MODULE_ SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. M OTOR CONTROL APPLICATIONS. FEATURES : . High Input Impedance : tf= 1 . 0/is Max. . High Speed trr = 0 . 5 y s ( M a x .) . Enhancement-Mode . Includes a Complete Half Bridge in one

G50Q2YS50

Contextual Info: TOSHIBA MG50Q2YS50A TEN TATIVE TO S H IB A G TR M O D U LE SILICO N IM C H A N N EL IG B T MG50Q2YS50A HIGH PO W ER SW ITC H IN G A P P LIC A TIO N S . M O TO R C O N TR O L A P P LIC A TIO N S . High Input Impedance High Speed : tf= 0.3/iS Max. @Inductive Load

MG50J2YS1

Abstract: IGBT MG50J2YS1
Contextual Info: GTR MODULE SILICON N CHANNEL IGBT MG50J2YS1 HIGH PO WER S W I T C H I N G APPL I CA TI ON S . M O T O R C ON T RO L A P PL IC A TI ON S. . High Input Impedance . High Speed : t f=0.3 5 / j s Max. trr=0. 25|is(May.) . Low Saturation Voltage : VCE(sat)=4•0V(Max.)

Contextual Info: T O SH IB A MG50Q6ES40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q6ES40 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • The Electrodes are Isolated from Case. • 6 IGBTs are Built Into 1 Package. • Enhancement-Mode • Low Saturation Voltage

Contextual Info: TOSHIBA MG50J1BS11 TO SH IBA GTR M O D U LE SILICON N CHANNEL IGBT MG50J1 BS11 HIGH PO W E R SWITCHING APPLICATIONS. Unit in mm M O TOR CONTROL APPLICATIONS. High Input Impedance High Speed : tf=1.0/^s M ax. (Ic = 50A) Low Saturation Voltage : VçE(sat) = 2-TV (Max.) (I<2= 50A)

MG30H1BL1

Abstract: S3885 MP6502 MG30G63L2 MP6504 MG50G2YL9 MG150H1FL1 A1015 MG50G6EL9 MG150H2YL1
Contextual Info: R egulator T ransisto rs Bipolar Darlington 1 O ro* Connection V ceo (SUS) (V) Maximum Rating ic<A) 15 10 20 2SD1314* 30 50 75 100 150 200 300 400 MG30Û1BL3 MG50G1BL3 450 <D BL MG30G18L4 MG30H1BL1 550 MG1SG1AL3 450 AL MG100G1AL3 MG15H1AL1 550 S3885* FL

MG50G1BL2

Abstract: mg50g1b mg50g1bl MG50G1
Contextual Info: lb ^FlìDìvaso DQOflsm i TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA DISCRETE/OPTO MG50G1BL2 _ 5bC 08214 SILICON NPN TRIPLE D IFFUSED TYPE (DARLINGTON POWER MODULE) HIGH POWER SWITCHING APPLICATIONS. Unit in mm FEATURES: . The Collector is Isolated from Ground,

1ZS40

Abstract: ft05d
Contextual Info: T O SH IB A MG50J1ZS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50J1 ZS40 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. B2 • High Input Impedance • H ighSpeed • Low Saturation Voltage 2 -FAST-ON-TAB #110 : tf=0.35,«s Max.

P channel 50A IGBT

Contextual Info: TOSHIBA MG50J6ES50 TO SH IBA GTR M O D ULE SILICON N CHANNEL IGBT MG50J6ES50 HIGH P O W E R SWITCHING APPLICATIONS. Unit in mm M O TO R CONTROL APPLICATIONS. • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package.

CM631

Contextual Info: MG50N2CK1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES : . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built Into 1 Package. . High DC Current Gain

2-33F1A

Abstract: MG50J1BS11 253H tcp 8005 CS630
Contextual Info: MG50J1BS11 TOSHIBA MG5 0 J 1 BS 1 1 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. High Input Impedance High Speed : tf= 1.0/^s Max. (I0 = 5OA) Low Saturation Voltage : VCE(sat)= 2.7V (Max.) (I0 = 5OA)

MG50J2YS50

Abstract: td 4950
Contextual Info: MG50J2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG50J2YS50 High Power Switching Applications Motor Control Applications Unit: mm The electrodes are isolated from case. High input impedance. Includes a complete half bridge in one package. Enhancement-mode.

MG50D2YM1

Contextual Info: TOSHIBA {DISCRETE/OPT0> TD 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA SEMICONDUCTOR DE~| TGTT E S G □Dlb4Eti 1 90D D T -3 9 -5 7 16426 TOSHIBA GTR MODULE MG50D2YM1 TECHNICAL DATA SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS. flOTOR CONTROL APPLICATIONS.

Contextual Info: TO TOSHIBA {DISCRETE/OPTO} 9097250 T O S H I B A <DISCRETE/OPTO> SEMICONDUCTOR ToJhtht D E | T 0 T 7 E S 0 0Dlti3SS 90D 16325 DT-33-35" -TOSHIBA G-TR MODULE MG50M1BK 1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.

Contextual Info: "TD TOSHIBA O I S C R E T E / O P T O } 9097250 TOSHIBA CDISCRETE/OPTO TOSHIBA Difjj TtHTSSO D01ti070 D 90D 16070 SEMICONDUCTOR DJ-33-3S TOSHIBA GTR MODULE TECHNICAL DATA MG50Q2YK1 SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. Unit in mm

Contextual Info: T O SH IB A MG50J1ZS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50J1 ZS40 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. B2 • • 2 -FAST-ON-TAB #110 High Input Impedance H ighSpeed : tf=0.35,«s Max. trr = 0.15^8 (Max.) Low Saturation Voltage

igbt toshiba mg

Abstract: MG50J1ZS40 ZS40
Contextual Info: TOSHIBA MG50J1ZS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50J1 ZS40 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. B2 • • • 2 -FAST-O N-TAB # 1 1 0 High Input Impedance High Speed : tf= 0.35/^s Max. trr = 0.15,«s (Max.)

td 4950

Abstract: MG50J6ES50
Contextual Info: TOSHIBA M G50J6ES50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50J6ES50 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • • • 4-0 5.5 ± 0.3 7-M4 The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package.

Contextual Info: T O S H IB A MG50Q1ZS50 MG50Q1ZS50 TO SHIBA GTR M O DU LE SILICON N C HANN EL IGBT Unit in mm HIGH POWER SW ITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS • • • • • High Input Impedance High Speed : tf = 0.3 jus Max. @Inductive Load Low Saturation Voltage

Contextual Info: T O SH IB A MG50Q2YS50A TOSHIBA GTR MODULE TENTATIVE SILICON N CHANNEL IGBT MG50Q2YS50A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf= 0 .3 ^ s Max. @Inductive Load • Low Saturation Voltage : v C E(sat) = 3-6Y (Max.)

mg50j2ys40

Abstract: IGBT MG50J2YS40 TOSHIBA IGBT mg50 toshiba MG50 YS40 2YS40 ALY TRANSISTOR MG50 pmp 4000 transistor ALY
Contextual Info: TOSHIBA GTR MODULE SEMICONDUCTOR TOSHIBA TECHNICAL M G 50J 2YS40 DATA SILICON N CHANNEL IGBT MG50J2YS40 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • • • l!X 3 - M5 High Input Impedance Highspeed : tf—0.35//S(Max.)

IRF 24N

Abstract: MG50Q2YS50A 294D
Contextual Info: TOSHIBA MG50Q2YS50A TOSHIBA GTR MODULE TENTATIVE SILICON N CHANNEL IGBT MG50Q2YS50A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=0.3/*s Max. Inductive Load • Low Saturation Voltage : v CE(sat) = 3-e v (Max.)