PW038 Search Results

Contextual Info: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG25Q2YS91 GTR Module Unit in mm Silicon N Channel IGBT «-FA ST-O N -TA B ♦100 High Power Switching Applications Motor Control Applications F e a tu re s • High input im pedance • High speed: tf = 1 .0|is Max.

Contextual Info: TOSHIBA INSULATED GATE BIPO LAR TRAN SISTO R MG100Q2YS11 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • High input impedance • High speed: • • • • tf = 1.Ojas Max. t|y = 0.5ns (Max.)

MG50Q2YS91

Abstract: 9t2 transistor ic 7800 MG50Q2YS9 PW03840796
Contextual Info: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG50Q2YS91 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • High input impedance • High speed: • • • • tf = 1 .O^is Max. V = 0.5ns (Max.)

MG75Q2YS11

Contextual Info: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG75Q2YS11 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • High input im pedance • High speed: tf = 1 .0[is Max. • Low saturation: V CE tn- = 0.5 n s (Max.)

Contextual Info: TOSHIBA INSULATED GATE BIPO LAR TRAN SISTO R MG50Q2YS91 GTR Module Unit in mm Silicon N Channel IGBT 4-FA ST-O N -TA B * 100 High Power Switching Applications Motor Control Applications Features • High input impedance • High speed: tf = 1 .Ops Max. • Lo w saturation:

igbt 25A toshiba

Abstract: MG25Q6ES42 Toshiba transistor Ic 100A
Contextual Info: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG25Q6ES42 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • 6 IGBTs are built into 1 package • High speed: tf = 0.5µs Max. trr = 0.5µs (Max.)

MG75Q2YS11

Abstract: MG75Q2YS1 251C MG-7
Contextual Info: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG75Q2YS11 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • High input impedance • High speed: • • • • tf = 1.0[is Max. t,. = 0.5ns (Max.)

MG100Q2YS11

Abstract: 2-109B4A MG100Q2YS1
Contextual Info: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG100Q2YS11 GTR Module Unit in mm Silicon N Channel IGBT S S High Power Switching Applications 4 - FAST-ON -TAB + 1 1 0 Motor Control Applications Features • H igh input im p e d a n c e • H igh s p e e d : t f = 1 .Ons M a x .