28M1 Search Results

MS75103-1

Abstract: 21aw MS91189 MS75103-9 MS75103-10
Contextual Info: RF INDUCTORS - LEADED RF INDUCTORS - THRU HOLE 28M PART NUMBER 28M121K 28M151K 28M181K 28M221K 28M271K 28M331K 28M391K 28M471K 28M561K 28M681K 28M821K 28M102K 28M122K 28M152K 28M182K 28M222K 28M272K 28M332K 28M392K 28M472K 28M562K 28M682K 28M822K 28M103K 28M123K

MS75103

Contextual Info: STANDARD RF INDUCTORS - THRU HOLE 28M 28MLF* TRADITIONAL Pb RoHS COMPLIANT Wirewound, Molded COTS PART MIL SPEC L NUMBER DESIGNATION µH 28M121K MS91189-14 28M151K MS91189-15 28M181K MS91189-16 28M221K MS91189-17 28M271K MS91189-18 28M331K MS91189-19 28M391K MS91189-20

28MLF

Contextual Info: RF INDUCTORS - LEADED RF INDUCTORS - THRU HOLE 28MLF PART NUMBER 28M121KLF 28M151KLF 28M181KLF 28M221KLF 28M271KLF 28M331KLF 28M391KLF 28M471KLF 28M561KLF 28M681KLF 28M821KLF 28M102KLF 28M122KLF 28M152KLF 28M182KLF 28M222KLF 28M272KLF 28M332KLF 28M392KLF 28M472KLF

Contextual Info: 2SA1893 SILICON PNP EPITAXIAL TYPE PCT PROCESS U nit in mm ST O R O B E FLASH A PPLIC A TIO N S. M E D IU M P O W E R A M P L IF IE R A PPLIC A TIO N S. = 100~320 (V c e = - 2V, l 0 = —0.5A) hFE = 70 (M in.)(V cE = —2V, I c = - 4 A ) Low Collector Saturation Voltage

Contextual Info: SILICON PNP EPITAXIAL TY PE PCT PRO CESS HIGH CURRENT SW ITCH IN G APPLICATIONS. U n it in mm Low Collector Saturation Voltage : VCE (sat)= -0.4V (Max.) (Ic = -3 A , I b = - 0.15A) High Speed Switching Time : tgtg=1.0/iS (Typ.) Complementary to 2SC5076 in nr

Contextual Info: 2SC6075 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6075 Power Amplifier Applications Power Switching Applications Unit: mm Low collector emitter saturation voltage : VCE sat = 0.5 V (max)（IC = 1A） High-speed switching: tstg = 0.4 µs (typ) Absolute Maximum Ratings (Ta = 25°C)

RC14M30K

Abstract: RM20M12K UTS712D10P32 souriau 841 UTS7142G1P UTS0124P UTS78D4P32 UTS61412S AWG 24 multi strand copper wire UTS6JC147S
Contextual Info: UTS Series Dynamic IP68/69K • UV Resistant • UL/IEC Compliant Overview UTS Series Cable assembly . 14 2 contacts . 20 2 + ground contacts . 28

2SK2229

Contextual Info: TOSHIBA 2SK2229 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2229 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE 8.0 ±0.2 APPLICATIONS 4V Gate Drive

2SK2200

Contextual Info: TOSHIBA 2SK2200 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2200 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S U n it in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE 8.0 ± 0.2

Contextual Info: TO SHIBA 2SK2229 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2- tt-M OSV 2SK2229 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 8.0 ± 0.2

K2846

Abstract: VDD480 2SK2846
Contextual Info: 2SK2846 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅤ 2SK2846 ○ スイッチングレギュレータDC−DC コンバータ用 ○ モータドライブ用 単位: mm : RDS (ON) = 4.2Ω (標準) z オン抵抗が低い。

k2835

Abstract: 2SK2835
Contextual Info: 2SK2835 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅤ 2SK2835 ○ スイッチングレギュレータDC−DC コンバータ用 ○ モータドライブ用 単位: mm : RDS (ON) = 0.56Ω(標準) z オン抵抗が低い。

k3374

Abstract: 2SK3374
Contextual Info: 2SK3374 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3374 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 0.8 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)

D2461

Abstract: 2SD2461
Contextual Info: 2SD2461 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2461 Power Amplifier Applications Unit: mm • High DC current gain: hFE 1 = 800 to 3200 (VCE = 5 V, IC = 0.1 A) • Low saturation voltage: VCE (sat) = 0.3 V (typ.) (IC = 0.5 A, IB = 5 mA) Absolute Maximum Ratings (Ta = 25°C)

2SA1892

Abstract: 2SC5029
Contextual Info: 2SA1892 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1892 Power Amplifier Applications Power Switching Applications • Unit: mm Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A, IB = −0.05 A) • High collector power dissipation: PC = 1.3 W

C5562

Abstract: 2SC5562
Contextual Info: 2SC5562 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5562 Switching Regulator and High-Voltage Switching Applications DC-DC Converter Applications • Unit: mm Excellent switching times: tr = 0.7 s max tf = 0.5 μs (max), (IC = 0.3 A) • High breakdown voltage: VCEO = 800 V

k2599

Abstract: 2SK2599
Contextual Info: 2SK2599 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2599 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance Unit: mm : RDS (ON) = 2.9 Ω (typ.) z High forward transfer admittance

D2480

Abstract: 2SD2480
Contextual Info: 2SD2480 東芝トランジスタ シリコンNPNエピタキシャル形 ダーリントン接続 2SD2480 ○ マイクロモータドライブハンマドライブ用 ○ スイッチング用 ○ 電力増幅用 • 直流電流増幅率が高い。: hFE = 2000 (最小) (VCE = 2 V, IC = 1 A)

D2462

Abstract: 2SB1602 2SD2462
Contextual Info: 2SD2462 東芝トランジスタ シリコンNPN三重拡散形 2SD2462 ○ 低周波電力増幅用 • • 単位: mm 直流電流増幅率が高い。: hFE 1 = 800~3200 (VCE = 5 V, IC = 0.2 A) 飽和電圧が低い。 : VCE (sat) = 0.4 V (標準) (IC = 1 A, IB = 10 mA)

C5562

Abstract: 2SC5562
Contextual Info: 2SC5562 東芝トランジスタ シリコンNPN三重拡散形 2SC5562 ○ 高速高電圧スイッチング用 ○ スイッチングレギュレータ用 ○ 高速 DC-DC コンバータ用 単位: mm • スイッチング時間が速い。 : tr = 0.7 s 最大

Contextual Info: T O SH IB A 2SC5029 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC5029 U nit in mm POWER SWITCHING APPLICATIONS • Low Saturation Voltage : v CE(sat) = °-5V (Max.) • High Collector Power Dissipation : P q = 1.3W (Ta = 25°C)

Contextual Info: T O SH IB A 2SJ378 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-M O SV 2SJ 378 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 5.0 ± 0 .2 4V Gate Drive

Contextual Info: SERIES GOWAIMDA • R.F. MOLDED CHOKES Style - Phenolic: LT 4, Grade 1, Class B Powdered Iron: LT 10, Grade 1, Class A Maximum Operating Temp. - Phenolic: -55° to +125°C Powdered Iron: -55° to +105°C Maximum Temperature Rise- Phenolic: 35°C Powdered Iron: 15°C

Contextual Info: T O S H IB A 2SC5075 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5075 SW ITCHING REGULATOR A N D HIGH VOLTAGE SW ITCHING Unit in mm APPLICATIONS HIGH SPEED DC-DC CONVERTER APPLICATIONS • High Speed Switching : tr=1.0/<s Max. , tf=1.0,«s (Max.)