2SC5076 Search Results

Contextual Info: SILICON PNP EPITAXIAL TY PE PCT PRO CESS HIGH CURRENT SW ITCH IN G APPLICATIONS. U n it in mm Low Collector Saturation Voltage : VCE (sat)= -0.4V (Max.) (Ic = -3 A , I b = - 0.15A) High Speed Switching Time : tgtg=1.0/iS (Typ.) Complementary to 2SC5076 in nr

c5076

Abstract: 2SC5076 IC404 2SA1905
Contextual Info: 2SC5076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC5076 High-Current Switching Applications. • Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SA1905

2SA19

Abstract: 2SA1905 2SC5076
Contextual Info: TO SH IBA 2SC5076 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC5076 Unit in mm HIGH CURRENT SWITCHING APPLICATIONS • 8.0 ±0 .2 Low Collector Saturation Voltage : Vq^ ( s a t ) “ 0.4V (Max.) (at Ic = 3A) High Speed Switching Time : tgtg^l.O/^s (Typ.)

A1905

Abstract: TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1905 2SC5076
Contextual Info: 2SA1905 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1905 High-Current Switching Applications. Unit: mm • Low collector saturation voltage: VCE (sat) = −0.4 V (max) • High speed switching time: tstg = 1.0 µs (typ.) • Complementary to 2SC5076

2SA1905

Abstract: 2SC5076
Contextual Info: TO SH IBA 2SC5076 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC5076 Unit in mm HIGH CURRENT SWITCHING APPLICATIONS • • • Low Collector - Saturation Voltaere 0 : Vnxr \OCOj/ = 0.4V - - - (Max.) V ✓ (at Ic = 3A) High Speed Switching Time

2SC5076

Abstract: 2SA1905 C5076
Contextual Info: 2SC5076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC5076 High-Current Switching Applications. • Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High-speed switching: tstg = 1.0 s (typ.) • Complementary to 2SA1905

Contextual Info: TO SH IBA 2SC5076 TO SH IBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC5076 HIGH CURRENT SWITCHING APPLICATIONS • U n it in mm Low C ollector S atu ra tio n V o ltage : V ^ e ( s a .t ) = 0-4V (M ax.) (a t I C = 3A ) • H ig h Speed S w itch in g Tim e

Contextual Info: TOSHIBA 2SC5076 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS i <;r * n i g HIGH CURRENT SWITCHING APPLICATIONS U nit in mm 8.0 ± 0.2 • Low Collector Saturation Voltage : V q e ( s a t ) “ 0.4V (Max.) (at I c = 3A) • High Speed Switching Time

2SA1905

Abstract: 2SC5076
Contextual Info: TO SH IBA 2SC5076 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC5076 Unit in mm HIGH CURRENT SWITCHING APPLICATIONS • • • Low Collector - Saturation Voltaere 0 : Vnxr \OCOj/ = 0.4V - - - (Max.) V ✓ (at Ic = 3A) High Speed Switching Time

C5076

Contextual Info: 2SC5076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC5076 High-Current Switching Applications. • Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SA1905

2SA1905

Abstract: 2SC5076
Contextual Info: TO SH IBA 2SA1905 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 905 HIGH CURRENT SWITCHING APPLICATIONS • Unit in mm Low Collector Saturation Voltage : VCE (sat)~ —0.4V (Max.) • High Speed Switching : tgtg^l.O/^s (Typ.) • Complementary to 2SC5076

2SA1905

Abstract: 2SC5076 C5076
Contextual Info: 2SC5076 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC5076 ○ 大電力スイッチング用 • 単位: mm コレクタ飽和電圧が低い。 : VCE (sat) = 0.4 V (最大) (IC = 3 A) • スイッチング時間が速い。 : tstg = 1.0 s (標準)

A1905

Abstract: 2SA1905 2SC5076
Contextual Info: 2SA1905 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1905 High-Current Switching Applications. • Unit: mm Low collector saturation voltage: VCE (sat) = −0.4 V (max) • High speed switching time: tstg = 1.0 s (typ.) • Complementary to 2SC5076

Contextual Info: TOSHIBA 2SC5076 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC5076 Unit in mm HIGH CURRENT SWITCHING APPLICATIONS • Low Collector Saturation Voltage : • • High Speed Switching Time Complementary to 2SA1905 SÍI + D5 = ^-4V (Max.) (at Ic = 3A)

2SA1905

Abstract: 2SC5076
Contextual Info: TO SH IBA 2SA1905 2 S A 1 90 5 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS • Low Collector Saturation Voltage : VCE (sat)~ —0.4V (Max.) • High Speed Switching : tgtg^l.O/^s (Typ.) • Complementary to 2SC5076

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

15J102

Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Contextual Info: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811

2sC5200, 2SA1943, 2sc5198

Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
Contextual Info: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428

l 836

Contextual Info: SILICON NPN EPITAXIAL TYPE PCT PROCESS HIGH CURRENT SW ITCH IN G APPLICATIONS. • • • U n it in m m Low Collector Saturation Voltage : VCE (sat) = 0-4V (Max.) (at Ic = 3A) High Speed Switching Time : tg tg ^ .O ^ s (Typ.) Complementary to 2SA1905 tipi

smd transistor h2a

Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
Contextual Info: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output

GT30F124

Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

Contextual Info: TOSHIBA 2SA1905 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 9 Q5 HIGH CURRENT SWITCHING APPLICATIONS Unit in mm 8.0 ± 0.2 Low Collector Saturation Voltage tm : VCE (sat)~ —0.4V (Max.) TTicrVi S t ip p H S w itrh in c r • - ö l/ g

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243