28C64 RAM Search Results

28C64 EEPROM

Abstract: 28C64 MBM28C64-25 MBM28C64 eeprom 28c64 till 111 28C64-25 eeprom 28c64-35 MBM28C64-35 at 28c64s
Contextual Info: FUJITSU CMOS 65536-BIT ELECTRICALLY ERASABLE PROGRAMMABLE ROM M BM 28C64-25 M BM 28C64-35 S e p te m b e r T 9 8 7 E d itio n 2 .0 CMOS 8 1 9 2 x 8 ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY The Fujitsu MBM 28C64 is a high speed 65,536 bits CMOS electrically erasable

seeq 28C64

Abstract: 28C64 EEPROM eeprom 28c64 28C64-250 28C64-300 28C64 28C64-350 2SC64 at 28c64s 28C64 military
Contextual Info: 28C64 Technology, Incorporated Timer E2 64K Electrically Erasable PROM July 1991 Features Power Up/Down Protection Circuitry • Military, Extended and Commercial Temperature Range • - 5 5 eC to +125°C Operation Military . -40°C to +8S°C Operation (Extended)

28C64 EEPROM

Abstract: eeprom 28c64 28C64 plcc 28C64 28c64 ram 3614-1 28C64-15 28C648 DS11108A-1 006042
Contextual Info: GENERAL INSTRUMENT ELDMIOÍM^ 28C64 64K 8K x 8 CMOS Electrically Erasable PROM FEATURES • Fast Read Access Time — 150 ns ■ High Performance CMOS T echnology fo r Low Power Dissipation — 100 ¿<A Standby — 30 mA Active ■ Fast Byte W rite Tim e — 200 jjs o r 1 ms

M28C64

Abstract: M28C64-W PDIP28 PLCC32 S028
Contextual Info: SGS-THOMSON iyiEïïïïÂQDtES M 28C64 64K 8K x 8 PARALLEL EEPROM with SOFTW ARE DATA PRO TECTION • FAST ACCESS TIME: - 90 ns a t5 V - 120ns at 3V ■ SINGLE SUPPLY VOLTAGE: - 5V ± 10% for M28C64 - 2.7V to 3.6V for M28C64-xxW ■ LOW POWER CONSUMPTION

26c64

Abstract: 28C64 EEPROM 28C64 plcc eeprom 28c64 28C64I 28c64 ram 28C64 military 28C648 28c64 28c64 833
Contextual Info: 3890002 MICROCHIP TECHNOLOGY GENL INC GENERAL INSTRUMENT IN S T R / S3 D 28C64 MICROCHIP 83D blG3201 03404 0003404 2 PlRELOIMfllMAIRV DM FO M ATO O IM 64K 8K x 8 CMOS Electrically Erasable PROM FEATURES • Fast Read Access Time — 150 ns ■ High Performance CMOS Technology for Low

M28C64

Abstract: M28C64-W PDIP28 PLCC32 S028
Contextual Info: SGS-THOMSON iyitEïïïïÂQDtES M 28C64 64K 8K x 8 PARALLEL EEPROM with SOFTW ARE DATA PRO TECTION • FAST ACCESS TIME: - 90 ns a t5 V - 120ns at 3V ■ SINGLE SUPPLY VOLTAGE: - 5V ± 10% for M28C64 - 2.7V to 3.6V for M28C64-xxW ■ LOW POWER CONSUMPTION

winbond 25080

Abstract: 29F200BB 16LF648A 89V51RD2 18f252 89S51 National SEMICONDUCTOR GAL16V8 29sf040 12f675 29F400BB
Contextual Info: Dataman-S4 Version 3.00 <ALL> Devices List - 1. S4 8 bit EPROM lib. V3.00 - AMD 27010

AD475

Abstract: 16V8Q 22V10 ATMEL PIC16C782 16v8z pic16f876a Equivalent AD347 AD486 xicor 28C64 82S123 programming
Contextual Info: PRODUCT DATA SHEET AD67 479-871 and AD347 / AD475 and AD486 Package Converters for 300 mil body 28 pin SOIC / SOP devices (and smaller parts) with one-to-one wiring Product Code Pins on skt Pins on Base Wiring Code Package Base pitch" AD67 28 28 01 S .6

HM6264 RAM

Abstract: IC114 earom 28c64 ram 93C46 data sheet transistor 2030 IC120 27C2001 IC109 ram hm6264
Contextual Info: Technical Note 2030, 2040 and 2050 Series Memory Security This document gives a full description of the types of memory devices contained in the 2030, 2040 and 2050 series signal generator and information on how to clear memory stores for when the instrument is removed from a

atmel 93c66

Abstract: PH29EE010 2764 EEPROM 537RU10 sst ph29ee010 556RT7A 556RT5 intel 8755 eprom 2716 537RU17
Contextual Info: Универсал ьны й програм матор Sterh ST­011 Производст во: Россия. Цен а: 17500 руб. с НД С. ST­011 имеет всего одну универсальную DIP­42 панель для программирования

ST 28C64

Contextual Info: G 7 . M28C64 64 Kbit 8K x 8 Parallel EEPROM With Software Data Protection • Fast Access Time: - 90 ns at VCc=5 V forM 28C 64 and M28C64-A - 120 ns at Vcc=3 V for M28C64-xxW ■ Single Supply Voltage: - 4.5 V to 5.5 V for M28C64 and M28C64-A - 2.7 V to 3.6 V for M28C64-xxW

41C1000

Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
Contextual Info: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258

AT28C64

Abstract: AT28C64E AT28C64/X
Contextual Info: AT28C64/X Features • • • • • • • • • • Fast Read Access Time - 120 ns Fast Byte Write - 200 µs or 1 ms Self-Timed Byte Write Cycle Internal Address and Data Latches Internal Control Timer Automatic Clear Before Write Direct Microprocessor Control

AT28C64

Abstract: AT28C64-12 28C64 15pc 28P6 AT28C64E 28c64 ram AT28C64-15 28C64 AT28C64-20 AT28C64-25
Contextual Info: AT28C64/X Features • • • • • • • • • • Fast Read Access Time - 120 ns Fast Byte Write - 200 µs or 1 ms Self-Timed Byte Write Cycle Internal Address and Data Latches Internal Control Timer Automatic Clear Before Write Direct Microprocessor Control

Contextual Info: MICROCHIP TECHNOLOGY INC SHE D b l G 3 2 G l GGGM7Sti 5 • "F4U 3-27 28C64B Microchip 64K 8K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • High Speed Performance - 70,90,120,150,200, 250ns Access Time • CMOS Technology for Low Power Dissipation

28C64

Abstract: STK10C68 STK11C68 embedded microprocessors eeprom 28c64 low cost eeprom programmer circuit diagram
Contextual Info: Common nvSRAM Questions Common nvSRAM Questions Simtek Corporation manufactures a complete family of high speed, high performance nonvolatile Static Random Access Memories nvSRAM . Simtek's entire product line is guaranteed nonvolatile for a minimum of 10 years, without any source of external power, special

DS60037

Abstract: 28C64B-25 28C64B M/28C64B
Contextual Info: 28C64B Microchip 64K 8K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • High Speed Performance - 70, 90,120, 150, 200, 250ns Access Time • CMOS Technology for Low Power Dissipation - 70mA Active - 150nA Standby • Fast Write Cycle Times - 64-Byte Page Write Operation

26c64

Abstract: 26C64B 28C64B 28C64B-25 28C64B-70 28C64 28C64B-12 28C64B-90 28C64B EEPROM *26C64
Contextual Info: 28C64B M ic r o c h ip 64K 8K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • High Speed Performance - 7 0 ,90 ,1 2 0 ,1 50 ,2 0 0 , 250ns Access Time • CMOS Technology for Low Power Dissipation - 70mA Active • 150|iA Standby • Fast Write Cycle Times

28C64

Abstract: STK10C68 STK11C68 STK14C88 FeRAM eeprom 28c64
Contextual Info: nvSRAM Basics Introduction Stores can be initiated in three ways: Hardware STORE, Software STORE, or AutoStore , depending on the family of component selected. Simtek Corporation manufactures a family of high speed, high performance nonvolatile Static Random

K93C46

Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257

Contextual Info: AT28C64/X Features • Fast Read Access Time -120 ns • Fast Byte Write - 200 us or 1 ms • Self-Timed Byte Write Cycle Internal Address and Data Latches Internal Control Timer Automatic Clear Before Write • Di rect Microprocessor Control READY/BUSY Open Drain Output

Contextual Info: ASAHI KASEI MICROSYSTEMS M D=Ja3b3S 0000113 T H A S H I 45E D AIC2 TC64 S e rie s T - 64Kbit Electrically Erasable PROM Preliminary FEATURES •8192 word x 8 bit Configuration ■Single +5 Volt Operation ■On-Chip Latches for Direct Microprocessor Interface

Contextual Info: AT28C64/X Features • • • • • • • • • • Fast Read Access Time -120 ns Fast Byte Write - 200 |js or 1 ms Self-Timed Byte Write Cycle Internal Address and Data Latches Internal Control Timer Automatic Clear Before Write Direct Microprocessor Control

B-057

Contextual Info: AT28C64/X Features • • • • • • • • • • Fast Read Access Time -120 ns Fast Byte Write - 200 |is or 1 ms Self-Timed Byte Write Cycle Internal Address and Data Latches Internal Control Timer Automatic Clear Before Write Direct Microprocessor Control