28P6 Search Results

Contextual Info: AT29C256 Features • • • • • • • • • • • • Fast Read Access Time - 70 ns 5-Volt-Only Reprogramming Page Program Operation Single Cycle Reprogram Erase and Program Internal Address and Data Latches for 64-Bytes Internal Program Control and Timer

Contextual Info: AT28C64B Features • • • • • • • • • • • Fast Read Access Time -150 ns Automatic Page Write Operation Internal Address and Data Latches for 64-Bytes Fast Write Cycle Times Page Write Cycle Time: 10 ms Maximum 1 to 64-Byte Page Write Operation

Contextual Info: AT28LV64 Features • • • • • • • • • 2.7 V to 3.6 V Supply Full Read and Write Operation Low Power Dissipation 8 mA Active Current 50 |jA CMOS Standby Current Read Access Time - 200 ns Byte Write - 3 ms Direct Microprocessor Control DATA Polling

Contextual Info: ATS415 Features • Pin-for-PIn Compatible, Functional Superset of PLS1 OS/A and PLUS405 Logic Sequencers • Zero Standby Power of Less than 100 nA Worst Case Power Dissipation at fMAX = 80 mA (Worst Case) • CM OS and TTL Compatible • Programmable Asynchronous Initialization and OE Functions

Contextual Info: AT28LV256 Features • • • • • • • • • • Fast Read Access Time - 200 ns Automatic Page Write Operation Internal Address and Data Latches for 64 Bytes Internal Control Timer Fast Write Cycle Times Page Write Cycle Time: 10 ms maximum 1 to 64 Byte Page Write Operation

AT28C256

Contextual Info: AT28C256 Features • • • • • • • • • • • Fast Read Access T im e -1 5 0 ns Automatic Page W rite Operation Internal Address and Data Latches for 64 Bytes Internal Control Timer Fast W rite Cycle Times Page W rite Cycle Time: 3.0 ms o r 10 ms maximum

Contextual Info: AT27LV256R Features • • • • • • • • • • • Wide Power Supply Range, 3.0 V to 5.5 V Fast Read Access Time -120 ns Compatible with JEDEC Standard AT27C256R Low Power 3.3-Volt CMOS Operation 20 |iA max. Standby 29 mW max. Active at 5 MHz for Vcc = 3.6 V

Contextual Info: AT28LV64 Features • • • • • • • • • 2.7 V to 3.6 V Supply Full Read and Write Operation Low Power Dissipation 8 mA Active Current 50 iA CMOS Standby Current Read Access Time - 200 ns Byte W rite - 3 ms Direct Microprocessor Control DATA Polling

Contextual Info: AT29LV256 Features • • • • • • • • • • • • Single 3.3 V + 10% Supply Three-Volt-Only Read and Write Operation Software Protected Programming Low Power Dissipation 15 mA Active Current 20 fxA CMOS Standby Current Fast Read Access Time - 200 ns

AT27LV512

Contextual Info: AT27LV512R Features • • • • • • • • • • • Wide Power Supply Range, 3.0 V to 5.5 V Fast Read Access T im e-120 ns Compatible with JEDEC Standard AT27C51.2R Low Power 3.3-Volt CMOS Operation 20 jiA max. Standby 29 mW max. Active at 5 MHz for Vcc = 3.6 V

Contextual Info: Features • Fast Read Access Tim e - 45 ns • Low-Power CMOS Operation - 100 jiA max. Standby - 20 mA max. Active at 5 MHz • JEDEC Standard Packages - 28-Lead 600-mii PDIP - 32-Lead PLCC - 28-Lead TSOP and SOIC • 5 V ± 10% Supply • High Reliability CMOS Technology

at29c256-15pc

Contextual Info: AT29C256 Features • • • Fast Read Access Tim e - 90 ns Five-Volt-Only Reprogramming Page Program Operation Single Cycle Reprogram Erase and Program Internal Address and Data Latches lo r 64 Bytes • Fast Program Cycle Times Page (64 Byte) Program Tim e - 1 0 ms

Contextual Info: Features • Bipolar Speed in JEDEC Standard EPROM Pinout Read Access Time • 55ns 28-Lead 600 mil CERDIP and OTP Plastic DIP 32-Pad LCC, JLCC and OTP PLCC • Low Power CMOS Operation 100 jiA max. Standby 50 mA max. Active at 10 MHz • High Output Drive Capability

Contextual Info: AT28C64/X Features • • • • • • • • • • Fast Read Access Time -1 2 0 ns Fast Byte Write - 200 |is or 1 ms Self-Timed Byte W rite Cycle Internal Address and Data Latches Internal Control Timer Automatic Clear Before Write Direct Microprocessor Control

Contextual Info: AT28HC64B Features • • • • • • • • • • • Fast Read Access Time - 55 ns Automatic Page Write Operation Internal Address and Data Latches for 64-Bytes Fast Write Cycle Times Page Write Cycle Time: 10 ms Maximum 1 to 64-Byte Page Write Operation

Contextual Info: AT27LV512R Features • • • • • • • • • • • Wide Power Supply Range, 3.0 VDC to 5.5 VDC Compatible with JEDEC Standard AT27C512R Low Power 3-Volt CMOS Operation 100 nA max. Standby 26 mW max. Active at 1 MHz for Vcc = 3.3 VDC 110 mW max. Active at 5 MHz for Vcc = 5.5 VDC

Contextual Info: AT28HC256/L Features • • • • • • • • • • • Fast Read Access Time - 70 ns Automatic Page Write Operation Internal Address and Data Latches for 64 Bytes Internal Control Timer Fast Write Cycle Times Page Write Cycle Time: 10 ms or 3 ms maximum

Contextual Info: ATMEL 43 E D C OR P 3.074177 0001055 S I AT38LV64 - T - i/b -z z - I Z Features • • • • • • • • • • Fast Read A ccess Tim e - 200ns Low Power 110m W Maxim um A ctive at V cc = 3.0V 100|iW M axim um (S tandby) 2V Data Retention Fully Static: No C lock Required

Contextual Info: Features • Fast Read Access Time - 55 ns • Automatic Page Write Operation - Internal Address and Data Latches for 64 Bytes • Fast Write Cycle Times - Page Write Cycle Time: 10 ms Maximum - 1 to 64-Byte Page Write Operation • Low Power Dissipation - 40 mA Active Current

5962-88525 15 ZX

Abstract: 64 CERAMIC LEADLESS CHIP CARRIER LCC AT28C256 CERAMIC LEADLESS CHIP CARRIER AT28C256-15 AT28C256-20 AT28C256-25 AT28C256-35 AT28C256F
Contextual Info: Features • Fast Read Access Time – 150 ns • Automatic Page Write Operation • • • • • • • • • • – Internal Address and Data Latches for 64 Bytes – Internal Control Timer Fast Write Cycle Times – Page Write Cycle Time: 3 ms or 10 ms Maximum

AT28C64B-25

Abstract: AT28C64B-20PC
Contextual Info: Features • Fast Read Access Time – 150 ns • Automatic Page Write Operation – Internal Address and Data Latches for 64 Bytes • Fast Write Cycle Times • • • • • • • • – Page Write Cycle Time: 10 ms Maximum Standard 2 ms Maximum (Option)

AT29C256 DIP

Abstract: AT29C256-90PI AT29C256-70JI AT-29C256 AT29C256 AT29C256-12 AT29C256-15 AT29C256-70 AT29C256-70JC AT29C256-70PC
Contextual Info: AT29C256 Features • • • • • • • • • • • • Fast Read Access Time - 70 ns 5-Volt-Only Reprogramming Page Program Operation Single Cycle Reprogram Erase and Program Internal Address and Data Latches for 64-Bytes Internal Program Control and Timer

atmel 530

Abstract: Atmel 318 atmel 030 28BV64 tce 0041 atmel TSOP top mark AT28BV64
Contextual Info: Features • 2.7V to 3.6V Supply – Full Read and Write Operation • Low Power Dissipation • • • • • • – 8 mA Active Current – 50 µA CMOS Standby Current Read Access Time - 300 ns Byte Write - 3 ms Direct Microprocessor Control – DATA Polling

0001H12

Abstract: AT28C64
Contextual Info: Features • Fast Read Access Time – 120 ns • Fast Byte Write – 200 µs or 1 ms • Self-timed Byte Write Cycle • • • • • • • – Internal Address and Data Latches – Internal Control Timer – Automatic Clear Before Write Direct Microprocessor Control