28APR14 Search Results

Contextual Info: c1 Obsolete C1 ECR-13-014907 KKB 28APR14

Contextual Info: SiS407ADN www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) MAX. ID (A) f, g 0.009 at VGS = -4.5 V -18 0.0122 at VGS = -2.5 V -18 0.0190 at VGS = -1.8 V -18 VDS (V) -20 • TrenchFET power MOSFET Qg (TYP.)

Contextual Info: US1A, US1B, US1D, US1G, US1J, US1K, US1M www.vishay.com Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time

UH1B

Contextual Info: UH1B, UH1C, UH1D www.vishay.com Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Oxide planar chip junction • Ultrafast recovery times for high frequency • Meets MSL level 1, per J-STD-020,

Contextual Info: 3KASMC10A thru 3KASMC43A www.vishay.com Vishay General Semiconductor Surface Mount PAR Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES • Junction passivation optimized design passivated anisotropic rectifier technology

Contextual Info: SiP32451, SiP32452, SiP32453 Vishay Siliconix 0.9 V to 2.5 V, 55 m Load Switch in WCSP4 DESCRIPTION FEATURES SiP32451, SiP32452 and SiP32453 are n-channel integrated high side load switches that operate from 0.9 V to 2.5 V input voltage range. SiP32451, SiP32452 and SiP32453 have low input logic

Contextual Info: SPICE Device Model Si2372DS www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C

Contextual Info: SSA33L, SSA34 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Schottky Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency

Contextual Info: SE10DB, SE10DD, SE10DG, SE10DJ www.vishay.com Vishay General Semiconductor Surface Mount ESD Capability Rectifiers FEATURES eSMP Series TO-263AC SMPD • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Oxide planar chip junction

Contextual Info: Si2392ADS www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) MAX. ID (A) a 0.126 at VGS = 10 V 3.1 0.144 at VGS = 6 V 2.9 0.189 at VGS = 4.5 V 2.6 Qg (TYP.) 2.9 nC SOT-23 (TO-236) • TrenchFET power MOSFET

Package Information

Abstract: WCSP4
Contextual Info: Package Information www.vishay.com Vishay Siliconix WCSP4: 4 Bumps 2 x 2, 0.4 mm pitch, 208 m bump height, 0.8 mm x 0.8 mm die size Mark on backside of die 1 A 2 1 2 W A B A B B e D 4 x Ø 0.15 to Ø 0.20 Solder mask dia. - Pad diameter + 0.1 0.4 e 4xØb

Contextual Info: SiP32467, SiP32468 www.vishay.com Vishay Siliconix 50 mΩ, Slew Rate Controlled Load Switch in WCSP DESCRIPTION FEATURES The SiP32467 and SiP32468 are slew rate controlled integrated high side load switches that operate in the input voltage range from 1.2 V to 5.5 V.

SS14 DIODE

Abstract: SS14
Contextual Info: SS12, SS13, SS14, SS15, SS16 www.vishay.com Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency

Contextual Info: SS32, SS33, SS34, SS35, SS36 www.vishay.com Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency

Contextual Info: SiP32460, SiP32461, SiP32462 www.vishay.com Vishay Siliconix 50 mΩ, Slew Rate Controlled Load Switch in WCSP DESCRIPTION FEATURES The SiP32460, SiP32461, and SiP32462 are slew rate controlled integrated high side load switches that operate over the input voltage range from 1.2 V to 5.5 V.

Contextual Info: Si3443DDV www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 RDS(on) (Ω) MAX. ID (A) a, e 0.047 at VGS = -4.5 V -4 0.080 at VGS = -2.7 V -4 0.090 at VGS = -2.5 V • TrenchFET power MOSFET Qg (TYP.) • PWM optimized

Contextual Info: Si4143DY www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) MAX. ID (A) d 0.0062 at VGS = -10 V -25.3 VDS (V) -30 0.0074 at VGS = -6 V -23.2 0.0092 at VGS = -4.5 V -20.8 Qg (TYP.) 54 nC SO-8 Single D 8 D 7 D 6

Contextual Info: RoHS F1AF THRU F1MF COMPLIANT 快恢复整流二极管 Fast Recovery Rectifier Diode •特征 Features ● Io ■外形尺寸和印记 Outline Dimensions and Mark 1.0A VRRM 50V~1000V ● 玻璃钝化芯片 Glass passivated chip ● 耐正向浪涌电流能力高

Contextual Info: SSC53L, SSC54 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Schottky Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency

D10JB

Contextual Info: D10JB05 THRU D10JB100 桥式整流器 Bridge Rectifier •特征 Features ● Io ■外形尺寸和印记 Outline Dimensions and Mark 10A VRRM 50V~1000V ● 玻璃钝化芯片 Glass passivated chip ● 耐正向浪涌电流能力高 High surge forward current capability

Contextual Info: D20JA05 THRU D20JA100 桥式整流器 Bridge Rectifier •特征 Features ● Io ■外形尺寸 Outline Dimensions and Mark 20A VRRM 50V~1000V ● 玻璃钝化芯片 Glass passivated chip ● 耐正向浪涌电流能力高 High surge forward current capability

Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER METAL STRIP RESISTORS WSHM2818 Power Metal Strip® Resistors, High Power 7 W , Low Value (Down to 0.001 Ω), Surface Mount KEY BENEFITS • • • • Improved thermal management incorporated into design

Contextual Info: S5A, S5B, S5D, S5G, S5J, S5K, S5M www.vishay.com Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Low forward voltage drop • Low leakage current

Contextual Info: SS22S, SS23S, SS24S www.vishay.com Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • High surge capability