SI3443DDV Search Results
SI3443DDV Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SI3443DDV-T1-BE3 | Vishay Siliconix | P-CHANNEL 20-V (D-S) MOSFET | Original | 250.84KB | 11 | ||
| SI3443DDV-T1-GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CHAN 20V TSOP6S | Original | 249.92KB |
SI3443DDV Price and Stock
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Vishay Siliconix SI3443DDV-T1-BE3P-CHANNEL 20-V (D-S) MOSFET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI3443DDV-T1-BE3 | Cut Tape | 11,934 | 1 |
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SI3443DDV-T1-BE3 | 6,000 |
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Vishay Siliconix SI3443DDV-T1-GE3MOSFET P-CH 20V 4A/5.3A 6TSOP |
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SI3443DDV-T1-GE3 | Digi-Reel | 191 | 1 |
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Vishay Intertechnologies SI3443DDV-T1-BE3P-CHANNEL 20-V (D-S) MOSFET - Tape and Reel (Alt: SI3443DDV-T1-BE3) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI3443DDV-T1-BE3 | Reel | 12,000 | 18 Weeks | 3,000 |
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SI3443DDV-T1-BE3 | 2,622 |
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SI3443DDV-T1-BE3 | 6,000 | 112 |
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SI3443DDV-T1-BE3 | 6,000 | 19 Weeks | 1 |
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SI3443DDV-T1-BE3 | Reel | 6,000 | 3,000 |
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Vishay Intertechnologies SI3443DDV-T1-GE3Power MOSFET, P Channel, 20 V, 4 A, 0.039 ohm, TSOP, Surface Mount - Tape and Reel (Alt: SI3443DDV-T1-GE3) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI3443DDV-T1-GE3 | Reel | 12,000 | 18 Weeks | 3,000 |
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SI3443DDV-T1-GE3 | 66,006 |
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SI3443DDV-T1-GE3 | Cut Tape | 33,385 | 5 |
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SI3443DDV-T1-GE3 | Reel | 6,000 |
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SI3443DDV-T1-GE3 | 1 |
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SI3443DDV-T1-GE3 | 20 Weeks | 6,000 |
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SI3443DDV-T1-GE3 | 19 Weeks | 3,000 |
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SI3443DDV-T1-GE3 | 3,000 | 3,000 |
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Vishay Intertechnologies SI3443BDV-T1-E3MOSFETs 20V 4.4A 2W |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI3443BDV-T1-E3 | Reel | 9,000 | 3,000 |
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SI3443DDV Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Si3443DDV www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 RDS(on) (Ω) MAX. ID (A) a, e 0.047 at VGS = -4.5 V -4 0.080 at VGS = -2.7 V -4 0.090 at VGS = -2.5 V • TrenchFET power MOSFET Qg (TYP.) • PWM optimized |
Original |
Si3443DDV Si3443DDV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: SPICE Device Model Si3443DDV www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C |
Original |
Si3443DDV 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 |