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    SI3443DDV Search Results

    SI3443DDV Datasheets (2)

    Vishay Siliconix
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SI3443DDV-T1-BE3
    		Vishay Siliconix P-CHANNEL 20-V (D-S) MOSFET Original PDF 250.84KB 11
    SI3443DDV-T1-GE3
    		Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CHAN 20V TSOP6S Original PDF 249.92KB
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    SI3443DDV Price and Stock

    Vishay Intertechnologies

    Vishay Intertechnologies SI3443DDV-T1-BE3

    P-CHANNEL 20-V (D-S) MOSFET
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    DigiKey () SI3443DDV-T1-BE3 Digi-Reel 10,786 1
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    SI3443DDV-T1-BE3 Tape & Reel 10,786 3,000
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    SI3443DDV-T1-BE3 Cut Tape 1,786 1
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    Avnet Americas SI3443DDV-T1-BE3 Tape & Reel 12,000 52 Weeks 3,000
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    Mouser Electronics () SI3443DDV-T1-BE3 5,622
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    SI3443DDV-T1-BE3 5,622
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    TTI SI3443DDV-T1-BE3 Reel 3,000 3,000
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    Vishay Intertechnologies SI3443DDV-T1-GE3

    MOSFET P-CH 20V 4A/5.3A 6TSOP
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    SI3443DDV-T1-GE3 Digi-Reel 1
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    Avnet Americas SI3443DDV-T1-GE3 Tape & Reel 52 Weeks 3,000
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    Mouser Electronics () SI3443DDV-T1-GE3 779
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    SI3443DDV-T1-GE3 699
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    Newark () SI3443DDV-T1-GE3 Cut Tape 5
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    TTI SI3443DDV-T1-GE3 Reel 6,000
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    TME SI3443DDV-T1-GE3 1
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    Avnet Asia SI3443DDV-T1-GE3 54 Weeks 6,000
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    SI3443DDV Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Si3443DDV www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 RDS(on) (Ω) MAX. ID (A) a, e 0.047 at VGS = -4.5 V -4 0.080 at VGS = -2.7 V -4 0.090 at VGS = -2.5 V • TrenchFET power MOSFET Qg (TYP.) • PWM optimized


    Original     		Si3443DDV Si3443DDV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SPICE Device Model Si3443DDV www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		Si3443DDV 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF