26N5 Search Results

ixf26n50q

Abstract: 24N50 26N50Q 125OC ixf26N50
Contextual Info: HiPerFETTM Power MOSFETs VDSS IXFH/IXFT 24N50Q IXFH/IXFT 26N50Q Q-Class 500 V 24 A 500 V 26 A trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

24N50

Abstract: 26N50 .24n50 IXFH26N50 IXFR24N50 IXFR26N50
Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 26N50 ISOPLUS247TM VDSS ID25 500 V 24 A 500 V 22 A trr £ 250 ns IXFR 24N50 Electrically Isolated Back Surface RDS(on) 0.20 W 0.23 W N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family

26N50

Abstract: IXFC 26N50 IXFH26N50 24N50 ixfc26n50 .26n50 .24n50 IXFC24N50
Contextual Info: ADVANCE TECHNICAL INFORMATION VDSS HiPerFETTM MOSFETs ISOPLUS220TM Electrically Isolated Back Surface IXFC 26N50 IXFC 24N50 ID25 RDS on 500 V 23 A 500 V 21 A trr ≤ 250 ns 0.20 Ω 0.23 Ω N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family ISOPLUS 220LVTM

Contextual Info: Photoelectric sensors FHDK 26N5001/S14 Diffuse sensors with background suppression dimension drawing 58 40 Pot LED 5,5 80 62 * 13 5,5 25,2 5,5 M12 x 1 24,3 13 8 8 * emitter axis general data photo type background suppression light source pulsed infrared diode

Contextual Info: Photoelectric sensors FPDK 26N5103/S14 Retro-reflective sensors dimension drawing 58 40 Pot LED 5,5 80 62 * 38 5,5 25,2 5,5 M12 x 1 24,3 13 8 8 * emitter axis general data photo type retro-reflective sensor light source pulsed red LED actual range Sb 12 m

Contextual Info: Photoelectric sensors FHDK 26N5001/S14 Diffuse sensors with background suppression dimension drawing 58 40 Pot LED 5,5 80 62 * 13 5,5 25,2 5,5 M12 x 1 24,3 13 8 8 * emitter axis general data type photo background suppression light source pulsed infrared diode

ixfh26n50q

Abstract: 26N50 IXFC 26N50
Contextual Info: ADVANCE TECHNICAL INFORMATION VDSS HiPerFETTM MOSFETs ISOPLUS220TM IXFC 26N50Q IXFC 24N50Q Electrically Isolated Back Surface ID25 RDS on 0.20 Ω 0.23 Ω 500 V 23 A 500 V 21 A trr ≤ 250 ns N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family

26n50

Abstract: IXFH .26n50 PLUS220SMD
Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFH 26N50P IXFV 26N50P IXFV 26N50PS VDSS = ID25 = RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25° C to 150° C 500 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ

PLUS220SMD

Contextual Info: PolarHVTM Power MOSFET IXFH 26N50P IXFV 26N50P IXFV 26N50PS VDSS ID25 RDS on trr = = ≤ ≤ 500 V 26 A Ω 230 mΩ 200 ns Avalanche Rated Fast Instrinsic Diode Preliminary Data Sheet Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

24n50

Abstract: IXFH26N50Q A24N50 .24n50 26N50 ISOPLUS247 IXFR24N50Q IXFR26N50Q SST250
Contextual Info: □IXYS Advanced Technical Information V DSS HiPerFET Power MOSFETs IXFR ISOPLUS247™ 26N50Q IXFR 24N50Q Electrically Isolated Back Surface D ^D25 24 A 500 V 22 A 500 V t rr < 250 ns DS(on) 0.20 Q 0.23 Q N-Channel Enhancement Mode HighdV/dt, Lowtrr, HDMOS™ Family

Contextual Info: Photoelectric sensors FHDK 26N5001/S14 Diffuse sensors with background suppression dimension drawing 58 40 Pot LED 5,5 80 62 * 13 5,5 25,2 5,5 13 8 8 M12 x 1 24,3 * emitter axis general data photo type background suppression light source pulsed infrared diode

26N50

Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 26N50 ISOPLUS247TM VDSS ID25 500 V 24 A 500 V 22 A trr £ 250 ns IXFR 24N50 Electrically Isolated Back Surface RDS(on) 0.20 W 0.23 W N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family

ixf26N50

Contextual Info: HiPerFETTM Power MOSFETs VDSS IXFH/IXFT 24N50Q IXFH/IXFT 26N50Q Q-Class 500 V 24 A 500 V 26 A trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

26n50

Abstract: .24n50 24n50 ixfc26n50 IXFC24N50 IXFH26N50 W26-1 Ixfc 26n50
Contextual Info: ADVANCE TECHNICAL INFORMATION VDSS HiPerFETTM MOSFETs ISOPLUS220TM IXFC 26N50 IXFC 24N50 Electrically Isolated Back Surface ID25 500 V 23 A 500 V 21 A trr ≤ 250 ns RDS on 0.20 Ω 0.23 Ω N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family Symbol

26N80Q

Abstract: 26N80
Contextual Info: dIXYS Advanced Technical Information HiPerFET Power MOSFETs IXFH 26N50Q IXFT 26N50Q Q-Class Symbol Test Conditions Maximum Ratings VDSS Td = 25° C to 150° C 500 V Voon Tj = 25° C to 150°C; RGS= 1 MQ 500 V Vos Continuous ±20 V Transient ±30 V osm '* 5

24N50

Abstract: 26N50 IXFC24N50 IXFC26N50 IXFH26N50
Contextual Info: ADVANCE TECHNICAL INFORMATION VDSS HiPerFETTM MOSFETs ISOPLUS220TM Electrically Isolated Back Surface IXFC 26N50 IXFC 24N50 ID25 RDS on 500 V 23 A 500 V 21 A trr ≤ 250 ns 0.20 Ω 0.23 Ω N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family ISOPLUS 220LVTM

Contextual Info: Advanced Technical Information IXFH 26N55Q IXFT 26N55Q HiPerFETTM Power MOSFETs Q-Class VDSS = 550 V = 26 A ID25 RDS on = 0.23 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

Contextual Info: Photoelectric sensors FHDK 26N5001/S14 Diffuse sensors with background suppression dimension drawing 58 40 Pot LED 5,5 80 62 * 13 5,5 25,2 5,5 M12 x 1 24,3 13 8 8 * emitter axis general data photo type background suppression light source pulsed infrared diode

26N50

Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR ISOPLUS247TM VDSS 26N50 IXFR 24N50 Electrically Isolated Back Surface ID25 500 V 24 A 500 V 22 A trr £ 250 ns RDS(on) 0.20 W 0.23 W N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family

26N50

Contextual Info: ADVANCE TECHNICAL INFORMATION VDSS HiPerFETTM MOSFETs ISOPLUS220TM IXFC 26N50Q IXFC 24N50Q Electrically Isolated Back Surface ID25 500 V 23 A 500 V 21 A trr ≤ 250 ns RDS on 0.20 Ω 0.23 Ω N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family

26N50Q

Abstract: IXFH26N50Q 24N50Q
Contextual Info: HiPerFETTM Power MOSFETs IXFR ISOPLUS247TM VDSS 26N50Q IXFR 24N50Q Electrically Isolated Back Surface ID25 RDS(on) 500 V 24 A 500 V 22 A trr £ 250 ns 0.20 W 0.23 W N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family Preliminary data sheet Symbol

26N50

Contextual Info: HiPerFETTM Power MOSFETs IXFH 26N50Q IXFT 26N50Q Q-Class VDSS ID25 RDS on = 500 V = 26 A = 0.20 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C

26N48

Abstract: 640S
Contextual Info: D.C. Motor 5,7 Watt 26N58 & 26N48 Precious metal commutation system - 9 segments scale : 3:4 dimensions in mm mass : 114 g 26N58 •1 26N48 Winding types Measured values 1 Measuring voltage 2 No-load speed 3 Stall torque 4 Average no-load current 5 Typical starting voltage

Contextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFC 26N50P VDSS = 500 V = 15 A ID25 Ω RDS on = 260 mΩ Electrically Isolated Tab, N-Channel Enhancement Mode, Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS