25OOC Search Results

MBR0540

Contextual Info: MBR0540 MBR0540 Features • 1.2 2 mm 1.0 Ampere; forward voltage less than 620 mv. 1 2 48 mils 0.071 1.800 0.055 (1.400) 0.91 mm 2.36 mm 0.91 mm 93 mils 4.19 mm • 400 milliwat Power Dissipation package. • Compact surface mount with same footprint as mini-melf.

Contextual Info: MB84VD23381FJ-80 Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu.

AP2605

Abstract: sot26 marking DS
Contextual Info: AP2605GY-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Fast Switching Characteristic S ▼ Lower Gate Charge D ▼ Small Footprint & Low Profile Package D BVDSS -30V RDS ON 80mΩ ID - 4A G ▼ RoHS Compliant

Contextual Info: 10-FZ06NRA075FU-P969F08 preliminary datasheet flowNPC 0 600V/ 75A Features flow0 12mm housing ● neutral point clamped inverter ● reactive power capability ● low inductance layout ● improved Low voltage write through capability Target Applications Schematic

Contextual Info: HiPerFETTM Power MOSFETs Single DieMOSFET IXFN 34N80 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS = 800 V ID25 = 34 A RDS on = 0.24 W D trr £ 250 ns Preliminary data sheet S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

AS1115

Abstract: AS1115U OUT330
Contextual Info: 600mA Low D ropout NPN Voltage Regulator FEATURES APPLICATIONS • • • • • • • • • • • • • • • Guaranteed 600mA Output Three Terminal Adjustable Or Fixed 1.5V, 2.5V, 3V, 3.3V & 5V Very Low Quiescent Current Low Dropout Voltage Of 1.2 Volts At Full Load

15N06L

Abstract: PJD15N06L 15N06 10A40
Contextual Info: PJD15N06L 60V N-Channel Enhancement Mode MOSFET TO-252 FEATURES • RDS ON , VGS@10V,IDS@10A=40mΩ • RDS(ON), VGS@4.5V,IDS@8.0A=50mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for DC/DC Converters

HGTG20N60A4D

Contextual Info: HGTG20N60A4D Data Sheet February 2009 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a

Contextual Info: HiPerFETTM Power MOSFETs IXFK 34N80 IXFX 34N80 VDSS ID25 RDS on Single MOSFET Die = 800 V = 34 A = 0.24 Ω trr ≤ 250 ns Avalanche Rated Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ

LL4448GP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD LL4448GP SURFACE MOUNT SWITCHING DIODE VOLTAGE 75 Volts CURRENT 150 mAmpere APPLICATION * Ultra high speed switching Mini-Melf FEATURE * Small surface mounting type. MINI-MELF * High speed. (TRR=4.0nSec Typ.) * Suitable for high packing density.

LL4148GP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD LL4148GP SURFACE MOUNT SWITCHING DIODE VOLTAGE 75 Volts CURRENT 0.15 Ampere APPLICATION * Ultra high speed switching Mini-Melf FEATURE * Small surface mounting type. MINI-MELF * High speed. (TRR=4.0nSec Typ.) * Suitable for high packing density.

Equivalent ana 650

Abstract: qtc 2730
Contextual Info: r, I i, ; . MIL.c-39012/z5E +%$%+= RI L-C-39012/250 6 October 1983 MILITARY YECIFICAT]ON sME1 CONUICTOAS, CWIAA , RAOIOFR20UfNCY HAROUANIFOR RAOILTREQLENCYCOASIM CW4ECTORS This specification fs approved for use by all DepartIWItS and Agensies of the LSsp4rt5ent of DefetTSe.

SOD-123 fairchild mbr0540

Abstract: MBR0540 mark d1 sod-123 MARKING CODE diode sod123 W1 CBVK741B019 F63TNR MMSZ5221B B4 SOD-123 Marking code b4 sod-123 MINI-MELF schottky BLUE CATHODE
Contextual Info: MBR0540 MBR0540 Features • 1.2 2 mm 1.0 Ampere; forward voltage less than 620 mv. 1 2 48 mils 0.071 1.800 0.055 (1.400) 0.91 mm 2.36 mm 0.91 mm 93 mils 4.19 mm • 400 milliwat Power Dissipation package. • Compact surface mount with same footprint as mini-melf.

20N60A4D

Abstract: HGTG20N60A4D 20N60A4 TA49341 TA49339 TA49372 IFM110 LD26 TO247
Contextual Info: HGTG20N60A4D Data Sheet February 2009 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SD2257 Features • • • • • Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1

Contextual Info: HiPerFETTM Power MOSFETs Single DieMOSFET IXFN 34N80 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS = 800 V ID25 = 34 A RDS on = 0.24 W D trr £ 250 ns Preliminary data sheet S Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C

20n60a4d

Abstract: HGTG20N60A4D TA49372
Contextual Info: HGTG20N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50304-3E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64 M ( x 16) FLASH MEMORY & 16 M ( × 16) Mobile FCRAMTM MB84VD23381FJ-80 • FEATURES • Power Supply Voltage of 2.7 V to 3.1 V • High Performance

AP2605GY Y5XX

Abstract: AP2605GY AP2605
Contextual Info: AP2605GY RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Fast Switching Characteristic S ▼ Lower Gate Charge D ▼ Small Footprint & Low Profile Package D BVDSS -30V RDS ON 80mΩ ID - 4A G SOT-26 D D Description

34N80

Abstract: 125OC 34N8
Contextual Info: HiPerFETTM Power MOSFETs Single DieMOSFET IXFN 34N80 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS = 800 V ID25 = 34 A RDS on = 0.24 W D trr £ 250 ns Preliminary data sheet S Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C

MBM30AL0064

Abstract: NAND FLASH BGA MB84VN23381EJ-90
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE1E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64M (x16) NAND-Type FLASH MEMORY & 16M (×16) SRAM Interface FCRAM MB84VN23381EJ-90 • FEATURES — NAND-Type FLASH MEMORY • Operating Voltage:2.7V to 3.3V

Contextual Info: CHENMKO ENTERPRISE CO.,LTD LL4448PT SURFACE MOUNT SWITCHING DIODE VOLTAGE 75 Volts CURRENT 150 mAmpere APPLICATION * Ultra high speed switching Mini-Melf FEATURE * Small surface mounting type. MINI-MELF * High speed. (TRR=4.0nSec Typ.) * Suitable for high packing density.

sd 20n60

Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
Contextual Info: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06

Contextual Info: CHENMKO ENTERPRISE CO.,LTD BD4148N1PT SURFACE MOUNT SWITCHING DIODE VOLTAGE 75 Volts CURRENT 0.15 Ampere APPLICATION * Ultra high speed switching FBPT-923 FEATURE * SmaBD surface mounting type. FBPT-923 * High speed. (TRR=4.0nSec Typ.) * Suitable for high packing density.