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IS09141

Abstract: d.331 transistor L9805 st driver regulator automotive HiQUAD-64 SPLIT MOTOR HiQuad SGFH LA AD10 PCB VK 557 diode 351
Contextual Info: L9805 Super Smart Power Motor Driver with 8-BIT MCU, CAN Interface, 16K EPROM, 256Bytes RAM, 128 Bytes EEPROM, 10 Bit ADC, WDG, 2 Timers, 2 PWM Modules, Full H-Bridge Driver PROUCT PREVIEW • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■

GSM11-11

Abstract: ISO7816 LQFP64 TDA8007B TDA8008 TDA8008HL TDA8028AHL TDA8028HL
Contextual Info: INTEGRATED CIRCUITS TDA8028, TDA8008 Dual multiprotocol smart card coupler Objective specification v4.0 February 2000 Philips Semiconductors Objective specification v4.0 Dual multiprotocol smart card coupler TDA8028, TDA8008 FEATURES • 8xC51 core with 16kBytes ROM TDA8028 or EPROM (TDA8008), 256Bytes RAM, 512Bytes AUXRAM, Timer 0, 1,

HiQuad

Abstract: SPLIT MOTOR AD10 L9805 st driver regulator automotive HiQUAD-64 HIQUAD64 ST HiQuad package HIQUAD-64
Contextual Info: L9805 Super Smart Power Motor Driver with 8-BIT MCU, CAN Interface, 16K EPROM, 256Bytes RAM, 128 Bytes EEPROM, 10 Bit ADC, WDG, 2 Timers, 2 PWM Modules, Full H-Bridge Driver PROUCT PREVIEW • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■

HiQuad package

Abstract: st driver regulator automotive HiQUAD-64 HiQuad HIQUAD64 ST L9805 SGFH LA AD10 SPLIT MOTOR
Contextual Info: L9805 Super Smart Power Motor Driver with 8-BIT MCU, CAN Interface, 16K EPROM, 256Bytes RAM, 128 Bytes EEPROM, 10 Bit ADC, WDG, 2 Timers, 2 PWM Modules, Full H-Bridge Driver PROUCT PREVIEW • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■

hf 224 capacitor

Contextual Info: 8 Bit Microcontroller TLCS-870/C Series TMP86C407MG TMP86C407MG The information contained herein is subject to change without notice. 021023 _ D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and

hf 224 capacitor

Contextual Info: 8 Bit Microcontroller TLCS-870/C Series TMP86C808DMG TMP86C808DMG The information contained herein is subject to change without notice. 021023 _ D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and

Contextual Info: 240PIN DDR2 667 Unbuffered DIMM 1GB With 64Mx8 CL5 TS128MLQ64V6J Description Placement The TS128MLQ64V6J is a 128M x 64bits DDR2-667 Unbuffered DIMM. The TS128MLQ64V6J consists of 16pcs 64Mx8bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin

Contextual Info: 240PIN DDR2 533 Registered DIMM 1024MB With 64Mx8 CL4 TS128MQR72V5J Placement Description The TS128MQR72V5J is a 128M x 72bits DDR2-533 Registered DIMM. The TS128MQR72V5J consists of 18 pcs 64Mx8 bits DDR2 SDRAMs in 60 ball FBGA package, 2 pcs register in 96 ball uBGA package, 1 pcs

Contextual Info: 200PIN DDR2 400 SO-DIMM 256MB With 32Mx16 CL3 TS32MSQ64V4M Description Placement The TS32MSQ64V4M is a 32M x 64bits DDR2-400 SO-DIMM. The TS32MSQ64V4M consists of 4pcs 32Mx16its DDR2 SDRAMs in 84 ball FBGA packages and a 2048 bits serial EEPROM on a 200-pin printed

Contextual Info: 214PIN DDR2 533 Micro-DIMM 256MB With 32Mx16 CL4 TS32MMQ64V5M Description Placement The TS32MMQ64V5M is a 32M x 64bits DDR2-533 J Micro-DIMM. The TS32MMQ64V5M consists of 4pcs 32Mx16bits DDR2 SDRAMs in 84 ball FBGA packages and a 2048 bits serial EEPROM on printed circuit board

Contextual Info: 240PIN DDR2 800 Unbuffered DIMM 512MB With 64Mx8 CL5 TS64MLQ64V8J Description Placement The TS64MLQ64V8J is a 64M x 64bits DDR2-800 Unbuffered DIMM. The TS64MLQ64V8J consists of 8 pcs 64Mx8bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin printed

Contextual Info: 144PIN PC133 Unbuffered SO-DIMM 256MB With 16MX16 CL3 TS32MSS64V6G Pin Identification Description The TS32MSS64V6G Dynamic RAM TS32MSS64V6G is a high-density consists 32Mx64 memory of 8 Synchronous module. pieces of The Symbol CMOS Function A0~A12 Address inputs

Contextual Info: 184PIN DDR333 Unbuffered DIMM 1024MB With 64Mx8 CL2.5 TS128MLD64V3J Description Placement The TS128MLD64V3J is a 64Mx64bits Double Data Rate SDRAM high-density Module for DDR333. The TS128MLD64V3J consists of 16pcs CMOS 64Mx8 bits Double Data Rate SDRAMs in 66 pin TSOP-II 400mil

Contextual Info: 240PIN DDR2 800 Unbuffered DIMM 1GB With 64Mx8 CL5 TS128MLQ64V8J Description Placement The TS128MLQ64V8J is a 128M x 64bits DDR2-800 Unbuffered DIMM. The TS128MLQ64V8J consists of 16pcs 64Mx8bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin

Contextual Info: AVED MEMORY PRODUCTS Where Quality & Memory Merge AMP366P1623BTE-C75/H 16M X 64 SDRAM DIMM, Unbuffered, based on 8M X 8, 4 Banks, 4K Refresh, 3.3V Synchronous DRAMs WITH SPD DESCRIPTION AVED Memory Products AMP366P1623BTE-C75/H is a 16M bit X 64 Synchronous Dynamic RAM high density memory

Contextual Info: AVED MEMORY PRODUCTS Where Quality & Memory Merge AMP374P1723AT2-C1L 16M X 72 SDRAM DIMM with ECC based on 16M X 8, 4 Banks, 4K REFRESH, 3.3V Synchronous DRAMs WITH SPD DESCRIPTION AVED Memory Products AMP374P1723AT2-C1L is a 16M bit X 72 Synchronous Dynamic

Contextual Info: AVED MEMORY PRODUCTS Where Quality & Memory Merge AMP366P1723BT2-C75 16M X 64 SDRAM DIMM based on 16M X 8, 4 Banks, 4K REFRESH, 3.3V Synchronous DRAMs WITH SPD DESCRIPTION AVED Memory Products AMP366P1723BT2-C75 is a 16M bit X 64 Synchronous Dynamic RAM high density memory module. The AVED Memory Products AMP366P1723BT2-C75

Contextual Info: AVED MEMORY PRODUCTS Where Quality & Memory Merge AMP374P3323CT2-C75 32M X 72 SDRAM DIMM with ECC based on 16M X 8, 4 Banks, 4K REFRESH, 3.3V Synchronous DRAMs WITH SPD DESCRIPTION AVED Memory Products AMP374P3323CT2-C75 is a 32M bit X 72 Synchronous Dynamic

nuvoton w78e052ddg

Abstract: w78e052ddg W78E052D 74373 latch pin config W78E054DDG W78E052DFG W78E052DPG w78e052ddg-40dip Nuvoton W78E W78E054DFG
Contextual Info: W78E054D/W78E052D/W78E051D Data Sheet 8-BIT MICROCONTROLLER Table of Contents1 2 3 4 5 6 7 GENERAL DESCRIPTION . 4 FEATURES . 5

AT45DB081D

Abstract: JEP106 PA10 PA11 AT45DB081D-MU-SL954
Contextual Info: Features • Single 2.5V or 2.7V to 3.6V Supply • RapidS Serial Interface: 66MHz Maximum Clock Frequency • • • • • • • • • • • • • • – SPI Compatible Modes 0 and 3 User Configurable Page Size – 256-Bytes per Page – 264-Bytes per Page

AT25DF081A

Abstract: AT25DF081A-SH AT25DF081A-SSH-T 8715a
Contextual Info: Features • Single 2.7V - 3.6V Supply • Serial Peripheral Interface SPI Compatible • • • • • • • • • • • • • • • • – Supports SPI Modes 0 and 3 – Supports RapidS Operation – Supports Dual-Input Program and Dual-Output Read

M366S6453DTS

Contextual Info: M366S6453DTS PC133/PC100 Unbuffered DIMM M366S6453DTS SDRAM DIMM 64Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M366S6453DTS is a 64M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

M374S6453CTS

Contextual Info: PC133/PC100 Unbuffered DIMM M374S6453CTS M374S6453CTS SDRAM DIMM 64Mx72 SDRAM DIMM with ECC based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M374S6453CTS is a 64M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung

M390S3320DT1-C7A

Abstract: M390S3320DT1 M390S3320DT1-C7C PC133 registered reference design
Contextual Info: PC133 Registered DIMM M390S3320DT1 M390S3320DT1 SDRAM DIMM 32Mx72 SDRAM DIMM with PLL & Register based on 32Mx4, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION The Samsung M390S3320DT1 is a 32M bit x 72 Synchronous •Performance range