256WORDS Search Results

Contextual Info: * SYNERGY 256 X 4 ECL RAM SY10422-4 SEMICONDUCTOR Fe a t u r e s • ■ Address access time, tAA :3ns max. d e s c r ip t io n The Synergy SY10422 is a 1024-bit Random Access Memory RAM , designed with advanced Emitter Coupled Logic (ECL) circuitry. The SY10422 is organized as 256words-by-4 bits, meets the standard 10K family signal and

cy7c122

Abstract: CY7C122-35DMB cy7c122-25PC 7C122 CY7C122-25SC CY7C122-35 CY7C122-25DC CY7C122-25
Contextual Info: CY7C122 CYPRESS SEMICONDUCTOR 256 x 4 Static R/W RAM Functional Description • 256 x 4 static RAM for control store in high-speed computers The CY7C122 is a high-performance CMOS static R A M organized as 256words by 4 bits. Easy memory expansion is pro­

Contextual Info: SMJ55166 262144 BY 16-BIT MULTIPORT VIDEO RAM SGMS057A - APRIL 1095 - REVISED JUNE 1995 * Organization: I • • • • • • • • • • • • • • • • • • • • HKC PACKAGE TOP VIEW - DRAM: 262144 Words x 16 Bits - SAM: 256Words x 16 Bits

Contextual Info: * SYNERGY SY10422-5 SY10422-6 256 x 4 ECL RAM SEMICONDUCTOR FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION The Synergy SY10422 is a 1024-bit Random Access Memory RAM , designed with advanced Emitter Coupled Logic (ECL) circuitry. The SY10422 is organized as 256words-by-4-bits, meets the standard 10K family signal and

TMS320P17

Abstract: d6151 filter lark eng 1D2T ltw 8 pin TMS320P14 TMS320LC15
Contextual Info: TMS320C1X DIGITAL SIGNAL PROCESSORS J A N U A H Y 1 9 8 7 — R E V IS E D J U L Y 1991 • Performance Up to 8.77 MIPs Commercial and Military Versions Available • All TMS320C1x Devices are Object Code Compatible Operating Free-Air Temperature . . . 0°C to 70°C

RAV 14202

Abstract: TMS320C26
Contextual Info: SMJ320C26 DIGITAL SIGNAL PROCESSOR 68-P IN GB PIN G R ID A R R A Y C E R A M IC P A C K A G E t TO P V IE W 100-ns Instruction Cycle Time 1568 Words of Configurable On-Chip Data/Program RAM 1 2 3 4 5 6 7 6 9 10 11 256 Words of On-Chip Program ROM 128k Words of Data/Program Space

tc528126

Abstract: TC528126B
Contextual Info: PRELIMINARY 131, 0 7 2 W O R D S x 3 B IT S M U L T IP O R T D R A M D E S C R IP T IO N The TC52812GBJ/BZ is a CMOS multiport memory equipped with a 131,072-words by 8-bits dynamic random access memory RAM port and a 256-words by 8-bits static serial access memory (SAM) port. The

27LS00

Abstract: 27LS01 27LS00 RAM Am27LS
Contextual Info: Am27LS00/01 Series 256-Bit Low-Power Schottky Bipolar RAM > 3 DISTINCTIVE CHARACTERISTICS • • High Internal ECL circuitry for optimum speed/power perfor­ mance over voltage and temperature • Output preconditioned during write to eliminate the write

TMS320P14

Abstract: TMS320LC15
Contextual Info: TMS320C1x DIGITAL SIGNAL PROCESSORS SPRS009C – JANUARY 1987 – REVISED JULY 1991 • • • • • • • • • • • • • • • Performance Up to 8.77 MIPs • • All TMS320C1x Devices are Object Code Compatible 144/256-Word On-Chip Data RAM

TMS320P14

Abstract: TMS320LC15
Contextual Info: TMS320C1x DIGITAL SIGNAL PROCESSORS SPRS009C – JANUARY 1987 – REVISED JULY 1991 • • • • • • • • • • • • • • • Performance Up to 8.77 MIPs • • All TMS320C1x Devices are Object Code Compatible 144/256-Word On-Chip Data RAM

QFN36-P-0606-0

Abstract: TC32306FTG QFN36-P FC102 61012 b00111111 AUTOHD 5275S 5275u rf 315mhz
Contextual Info: TC32306FTG TOSHIBA CMOS Integrated Circuit Silicon Monolithic TC32306FTG Single-Chip RF Transceiver for Low-Power Systems 1. General Description The TC32306FTG is a single-chip RF transceiver, which provides many of the functions required for UHF-band transceiver applications. It has the most features transmiting and

smj320c25

Contextual Info: SMJ320C26 DIGITAL SIGNAL PROCESSOR SGUS 016A – AUGUST 1990 – REVISED AUGUST 2001 D 100-ns Instruction Cycle Time D 1568 Words of Configurable On-Chip D D D D D D D D D D D D D D D D D D D D D Data/Program RAM 256 Words of On-Chip Program ROM 128K Words of Data/Program Space

m514262

Abstract: MSM514262 MSM514262-10 MSM514262-70 MSM514262-80 ZIP28-P-400 M5M51426 MSM51426
Contextual Info: O K I Semiconductor MSM5 14262 262,144-Word x 4-Bit Multiport DRAM DESCRIPTION The MSM514262 is a 1-Mbit CMOS m ultiport DRAM com posed of a 262,144-word by 4-bits dynam ic RAM and a 512-words b y 4-bits SAM. Its RAM and SAM operate independently and asynchronously.

HT82K95E

Abstract: HT82K95A
Contextual Info: HT82K95E/HT82K95A USB Multimedia Keyboard Encoder 8-Bit MCU Technical Document • Tools Information · FAQs · Application Note Features · Operating voltage: · 4096´15 program memory ROM fSYS=6M/12MHz: 4.2V~5.5V · 160´8 data memory RAM · Low voltage reset function

TC58DAM72A1FT00

Abstract: TC58DVM72A1FT00 TC58DAM72F1FT00 TC58DVM72F1FT00 TC58DAM72A1X
Contextual Info: TC58DVM72A1FT00/ TC58DVM72F1FT00 TC58DAM72A1FT00/ TC58DAM72F1FT00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128-MBIT 16M u 8 BITS/8M x 16BITS CMOS NAND E2PROM DESCRIPTION The TC58DxM72x1xxxx is a 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable

Contextual Info: T O S H IB A D IG IT A L IN T E G R A T E D CIRCUIT INTEGRATED CIRCUIT TO SHIBA T C 5 2 8 1 2 8 \ P / A J- 1 0 , TC528128AP / A J -12 TECHNICAL DATA SILIC O N G A T E C M O S P R E L IM IN A R Y 131,072W ORDSx88ITS M U LT IPO R T D RA M DESCRIPTION The TC528128AP/ A J is a CMOS multiport memory equipped with a 131,072-words by 8-bits

27LS00

Abstract: AM27S00
Contextual Info: NOV 2 ì 1991J P ag e 0001 n /2 3 /8 8 1 4 :3 4 :2 9 Tx: A M 2 7 L S 0 0 T E D • Ft: A M D F M T Am27LS00 Series 256-Bit Low-Power Schottky Bipolar RAM > 3 to DISTINCTIVE CHARACTERISTICS • • High spead Internal ECL circuitry for optimum spee d /p o w e r perfor­

Samsung oneNand Mux

Abstract: samsung 1Gb nand flash SAMSUNG 256Mb NAND Flash Qualification Report KFM1216Q2M 48FBGA 8017h 2112b 1001Ah 803FH samsung 2GB Nand flash 121 pins
Contextual Info: MuxOneNAND512 KFM1216Q2M FLASH MEMORY MuxOneNAND SPECIFICATION Product Part No. VCC(core & IO) PKG MuxOneNAND512 KFM1216Q2M 1.8V(1.7V~1.95V) 48FBGA(LF) Version: Ver. 1.3 Date: June 15th, 2005 1 MuxOneNAND512(KFM1216Q2M) FLASH MEMORY INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,

Contextual Info: HT82J97E/HT82J97A USB Joystick Encoder 8-Bit MCU Technical Document • Tools Information · FAQs · Application Note Features · Flexible total solution for applications that combine · Two 8-bit indirect addressing registers PS/2 and low-speed USB interface, such as mice,

Contextual Info: HT82K95E/HT82K95A USB Multimedia Keyboard Encoder 8-Bit MCU Technical Document • Tools Information · FAQs · Application Note Features · Operating voltage: · 160´8 data memory RAM fSYS=6M/12MHz: 3.3V~5.5V · All I/O ports support wake-up options · Low voltage reset function

27S23

Abstract: fuses N50 AM27S23 AM27S23A CERAMIC FLATPACK 20pin
Contextual Info: a Advanced Micro Devices Am27S23/Am27S23A 2,048-Bit 256x8 Bipolar PROM DISTINCTIVE CHARACTERISTICS • High Speed L o w -current P N P inputs ■ Highly reliable, ultra-fast program m ing P latinum -S ilicide fuses H igh-current o p en -co llec to r and three-state

10072h

Abstract: structure chart of samsung company
Contextual Info: MuxOneNAND512 KFM1216Q2M FLASH MEMORY MuxOneNAND SPECIFICATION Product MuxOneNAND512 Part No. KFM1216Q2M VCC(core & IO) PKG 1.8V(1.7V~1.95V) 48FBGA(LF) Version: Ver. 1.3 Date: June 15, 2005 1 MuxOneNAND512(KFM1216Q2M) FLASH MEMORY INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,

Contextual Info: O r e c o m m e n d e d o p e r a t i n g c o n d it io n Parameter Symbol Rating Unit Supply Voltage V cc 1.8—5.5 V Input Voltage V in 0—V cc V O D C OPERATING CH A R A C TER ISTIC S Unless otherwise specified Ta=-40~85°C. Vcc=1.8~5.5V Parameter Specification

Contextual Info: Rev. 1.0, Nov 2010 K8S2815ET B E 128Mb E-die NOR FLASH 44FBGA, 7.7x6.2, 0.5mm ball pitch 8M x16, Muxed Burst, Multi Bank datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed