SSTL-25
Abstract: MT9VDDT1672 MT9VDDT3272 PC2100 PC2700
Contextual Info: 128MB, 256MB, 512MB x72, ECC, SR 184-Pin DDR SDRAM RDIMM Features DDR SDRAM RDIMM MT9VDDT1672 – 128MB1 MT9VDDT3272 – 256MB2 MT9VDDT6472 – 512MB2 For component data sheets, refer to Micron’s Web site: www.micron.com Features 184-Pin RDIMM Figures
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EEPROM 128MB
Abstract: DDR SDRAM Component Micron technology MT46V16M8
Contextual Info: 128MB, 256MB, 512MB x64, SR 200-Pin DDR SDRAM SODIMM Features DDR SDRAM SODIMM MT8VDDT1664H – 128MB1 MT8VDDT3264H – 256MB2 MT8VDDT6464H – 512MB For component data sheets, refer to Micron’s Web site: www.micron.com Figure 1: Features • 200-pin, small-outline dual in-line memory module
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128mb256mb512mb200-pin+8mt8vddt1664h128mb1mt8vddt3264h256mb2mt8vddt6464heeprom 128mbddr sdram component micron technologymt46v16m8
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MT8VDDT12864HDG-265
Abstract: MT46V32M16 MT46V16M16
Contextual Info: 128MB, 256MB, 512MB, 1GB x64, DR : 200-Pin DDR SODIMM Features DDR SDRAM SODIMM MT8VDDT1664HD – 128MB1 MT8VDDT3264HD – 256MB2 MT8VDDT6464HD – 512MB MT8VDDT12864HD – 1GB2 For component data sheets, refer to Micron’s Web site: www.micron.com Features
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MT46V32M16
Abstract: MT8VDDT6464H MT8VDDT12864HD mt46v16m16 rev a MT46V16M16
Contextual Info: 128MB, 256MB, 512MB, 1GB x64, DR 200-Pin DDR SDRAM SODIMM Features DDR SDRAM SODIMM MT8VDDT1664HD – 128MB1 MT8VDDT3264HD – 256MB2 MT8VDDT6464HD – 512MB MT8VDDT12864HD – 1GB2 For component data sheets, refer to Micron’s Web site: www.micron.com
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128mb256mb512mb200-pin+10mt8vddt1664hd128mb1mt8vddt3264hd256mb2mt8vddt6464hdmt46v32m16mt8vddt6464hmt8vddt12864hdmt46v16m16 rev amt46v16m16
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MT5VDDT872AG-335
Abstract: DQ11 PC2100 PC2700 MT5VDDT1672AG-40B BA0B MT46V32M16 MT46V16M16
Contextual Info: 64MB, 128MB, 256MB x72, ECC, SR 184-Pin DDR SDRAM UDIMM Features DDR SDRAM UDIMM MT5VDDT872A – 64MB1 MT5VDDT1672A – 128MB2 MT5VDDT3272A – 256MB2 For component data sheets, refer to Micron’s Web site: www.micron.com Features Figure 1: • 184-pin, unbuffered dual in-line memory module
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Samsung EOL
Abstract: IS42S81600F is42s16320 IS43DR16320 IS42S32200L IS49NLC36800 IS43R32400E IS46R Mobile SDRAM IS42S32200E
Contextual Info: Industrial Grade Memory Products Selecting the Right ISSI Industrial Grade Memory Fastest Random Access Access <20ns 288-576Mb Memory No DRC* Lower cost/bit 18-72Mb RLDRAM 10-20ns Easy Interface, Low Power Higher Density Ultra Low Power Synch SRAM <5ns Asynch SRAM
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288-576mb10-20ns18-72mb64kb-16mb+168mb-64mb16mb-512mb16mb-1gb256mb-2gb200mhz-40ocsamsung eolis42s81600fis42s16320is43dr16320is42s32200lis49nlc36800is43r32400eis46rmobile sdramis42s32200e
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Micron Technology
Contextual Info: Micron DRAM Products Overview August 2013 John Quigley – Micron FAE 2012 Micron Technology, Inc. All rights reserved. Products are warranted only to meet Micron’s production data sheet specifications. Information, products, and/or specifications are subject to change without notice. All information is provided on an “AS IS” basis without warranties of any kind. Dates are estimates only. Drawings are not to scale. Micron and
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md2817
Abstract: 82443GX 440GX 82371EB "full hd" mobile phone camera pinout PIIX4E MD2716 2906380
Contextual Info: Intel 440GX AGPset: 82443GX Host Bridge/Controller Datasheet June 1998 Order Number: 290638-001 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel's Terms and Conditions of Sale for such products, Intel assumes no liability
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Contextual Info: SamsungSemi conduct orEur ope2008 i magi net r ueupgr adecompat i bi l i t y What evert her easonf oryourcust omer ' snextPCmemor yupgr ade,you' l l wantt omakesur ecompat i bi l i t yi sagi ven,notapl easantsur pr i se.Wi t h Samsungpr emi um qual i t yPC memor
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L24002
Abstract: NAND "read disturb" 1GB Toshiba 512 NAND MLC FLASH BGA PC133 registered reference design CMOS 0.8mm process cross Lithium battery CR2025 sony M2V28S30AVP M5M51008CFP
Contextual Info: Future On Chips MITSUBISHI SEMICONDUCTORS MITSUBISHI ELECTRIC CORPORATION ULSI Memory Memory Series Series ULSI RAM/MCP/FLASH New Data Package http://www.mitsubishichips.com Jul. 2000 MITSUBISHI ELECTRIC L-11002-01 CONTENTS General Business Operation Network and Production Facilities
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l-11002-0164mdram64msdram128msdram+10256msdram144mrdraml24002nand "read disturb" 1gbtoshiba 512 nand mlc flash bgapc133 registered reference designcmos 0.8mm process crosslithium battery cr2025 sonym2v28s30avpm5m51008cfp
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sandisk nAND flash 64Mb
Abstract: MF32 sram card
Contextual Info: MITSUBISHI L-81001-0B ELECTRIC Mitsubishi IC Card Technical Direction Mitsubishi IC Card Low Cost High Density IC CARD High Performance Return to Contents L-81004-0K MITSUBISHI ELECTRIC MITSUBISHI IC CARD STORAGE CARD Flash ATA PC Card Capacity(MB) Type Name
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l-81001-0bl-81004-0kmf0064m-07btxxmf0128m-07btxx+9mf0256m-07btxxmf0512m-07btxxmf0640m-07bfxx68p-01168p-001256mbsandisk nand flash 64mbmf32sram card
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Contextual Info: Intel 440GX AGPset: 82443GX Host Bridge/Controller Datasheet June 1998 Order Number: 290638-001 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel's Terms and Conditions of Sale for such products, Intel assumes no liability
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FW82443GX
Abstract: FW82443GX SL2TF 16MX4 16MX8 32MX72 440GX 82443GX intel DOC 443GX
Contextual Info: R Intel 82443GX AGPset Specification Update Specification Update April, 2000 Notice: The Intel 82443GX AGPset may contain design defects or errors known as errata which may cause the product to deviate from published specifications. Current characterized errata are documented in this Specification Update.
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sandisk micro sd card pin
Abstract: MCP 1Gb nand 512mb dram 130 256K x 16 DRAM FPM cross reference Toshiba NAND MLC FLASH BGA TSOP 48 Package nand memory toshiba MCP 1Gb 512Mb 130 PC133 registered reference design L7103 02bjxx ulsi
Contextual Info: Future On Chips MITSUBISHI SEMICONDUCTORS MITSUBISHI ELECTRIC CORPORATION ULSI Memory Memory Series Series ULSI RAM/MCP/FLASH New Data Package http://www.mitsubishichips.com Jul. 2000 L-11002-01 MITSUBISHI ELECTRIC CONTENTS 1. General 1 2. DRAM 9 3. Low Power SRAM
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l-11002-01l-11003-0isandisk micro sd card pinmcp 1gb nand 512mb dram 130+8256k x 16 dram fpm cross referencetoshiba nand mlc flash bgatsop 48 package nand memory toshibamcp 1gb 512mb 130pc133 registered reference designl710302bjxxulsi
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