A11 MARKING CODE
Abstract: MARK 8E diode MT48LC16M8A2FB-75 sdram 4 bank 4096 16 8M16 MT48LC16M8A2 MT48LC32M4A2 MT48LC8M16A2 micron x8 pc100 sdram PC133 registered reference design
Contextual Info: 128Mb: x4, x8, x16 SDRAM SYNCHRONOUS DRAM MT48LC32M4A2 – 8 Meg x 4 x 4 banks MT48LC16M8A2 – 4 Meg x 8 x 4 banks MT48LC8M16A2 – 2 Meg x 16 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/dramds FEATURES • PC100-, and PC133-compliant
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128mbmt48lc32m4a2mt48lc16m8a2mt48lc8m16a2+12pc100-pc133-compliant096-cycle60-ball11x13a11 marking codemark 8e diodemt48lc16m8a2fb-75sdram 4 bank 4096 168m16micron x8 pc100 sdrampc133 registered reference design
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Contextual Info: PRELIMINARY 128Mb: x4, x8, x16 SDRAM MT48LC32M4A2 - 8 Meg x 4 x 4 banks MT48LC16M8A2 - 4 Meg x 8 x 4 banks MT48LC8M16A2 - 2 Meg x 16 x 4 banks SYNCHRONOUS DRAM For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html
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128mbpc100-pc133-compliant096-cycle+4mt48lc32m4a2mt48lc16m8a2mt48lc8m16a2128msdram
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256MSDRAM
Abstract: celestica
Contextual Info: HYS 64/72V8300/16220GU SDRAM-Modules 3.3 V 8M x 64/72-Bit 1 Bank SDRAM Module 3.3 V 16M × 64/72-Bit 2 Bank SDRAM Module 168-Pin Unbuffered DIMM Modules • Programmed Latencies: • 168-Pin unbuffered 8-Byte Dual-In-Line SDRAM Modules for PC main memory
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64/72v8300/16220gu64/72-bit168-pinpc100+3pc133256msdramcelestica
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8M16
Abstract: MT48LC16M8A2 MT48LC32M4A2 MT48LC8M16A2 TN-48-05 PC133 registered reference design marking B44 MT48LC16M8A2BB MT48LC16M8A2P
Contextual Info: 128Mb: x4, x8, x16 SDRAM SYNCHRONOUS DRAM MT48LC32M4A2 – 8 Meg x 4 x 4 banks MT48LC16M8A2 – 4 Meg x 8 x 4 banks MT48LC8M16A2 – 2 Meg x 16 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/dramds FEATURES PIN ASSIGNMENT Top View
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128mbmt48lc32m4a2mt48lc16m8a2mt48lc8m16a2+12pc100-pc133-compliant096-cycle09005aef8091e66d/source09005aef8091e625128msdram8m16tn-48-05pc133 registered reference designmarking b44mt48lc16m8a2bbmt48lc16m8a2p
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8M16
Abstract: MT48LC16M8A2 MT48LC32M4A2 MT48LC8M16A2
Contextual Info: 128Mb: x4, x8, x16 SDRAM SYNCHRONOUS DRAM MT48LC32M4A2 - 8 Meg x 4 x 4 banks MT48LC16M8A2 - 4 Meg x 8 x 4 banks MT48LC8M16A2 - 2 Meg x 16 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES
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128mbmt48lc32m4a2mt48lc16m8a2mt48lc8m16a2+6pc66-pc100-pc133-compliant096-cycle128msdram8m16
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128MSDRAM
Contextual Info: 128Mb: x4, x8, x16 SDRAM SYNCHRONOUS DRAM MT48LC32M4A2 – 8 Meg x 4 x 4 banks MT48LC16M8A2 – 4 Meg x 8 x 4 banks MT48LC8M16A2 – 2 Meg x 16 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/products/datasheets/sdramds.html
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128mbpc100-pc133-compliant096-cycle+6mt48lc32m4a2mt48lc16m8a2mt48lc8m16a260-pin11x13128msdram
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Contextual Info: 128Mb: x4, x8, x16 SDRAM SYNCHRONOUS DRAM MT48LC32M4A2 – 8 Meg x 4 x 4 banks MT48LC16M8A2 – 4 Meg x 8 x 4 banks MT48LC8M16A2 – 2 Meg x 16 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/datasheets FEATURES • PC100-, and PC133-compliant
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128mbpc100-pc133-compliant096-cycle+5mt48lc32m4a2mt48lc16m8a2mt48lc8m16a260-pin11x13
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8M16
Abstract: MT48LC16M8A2 MT48LC32M4A2 MT48LC8M16A2
Contextual Info: 128Mb: x4, x8, x16 SDRAM SYNCHRONOUS DRAM MT48LC32M4A2 – 8 Meg x 4 x 4 banks MT48LC16M8A2 – 4 Meg x 8 x 4 banks MT48LC8M16A2 – 2 Meg x 16 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/products/datasheets/sdramds.html
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128mbmt48lc32m4a2mt48lc16m8a2mt48lc8m16a2+6pc100-pc133-compliant096-cycle60-pin11x138m16
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L-23014-01
Abstract: L24002 mitsubishi cdram
Contextual Info: L-21001-0B MITSUBISHI ELECTRIC Mitsubishi DRAM Technical Direction High Performance, Low Power,High Density,High Speed etc. High Density Wide Bit Organization 1G High Speed 512M Direct Rambus TM x32 256M DDR 128M SDRAM EDO Fast Page 64M DRAM Self Refresh
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l-21001-0bl-21002-0ix4/x8/x16l-23014-01+2l24002mitsubishi cdram
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64V32300GU-8-A
Contextual Info: HYS 64/72V32300GU SDRAM-Modules 3.3 V 32M x 64/72-Bit SDRAM Modules 168-pin Unbuffered DIMM Modules • 168 Pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications • Programmable CAS Latency, Burst Length, and Wrap Sequence Sequential &
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64/72v32300gu64/72-bit168-pinpc100+4pc133aprl99module256mbit64v32300gu-8-a
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HYS72V1
Contextual Info: HYS 64V8301GU SDRAM-Modules 3.3 V 8M x 64-Bit 1 Bank SDRAM Module 168-pin Unbuffered DIMM Modules • Programmed Latencies: • 168 Pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications Product Speed CL tRCD tRP • PC100 and PC133 versions
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64v8301gu64-bit168-pinpc100+3pc133aprl99modulehys72v1
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256MDDRSDRAM
Abstract: B22XX
Contextual Info: HYS 64/72V64220GU SDRAM-Modules 3.3 V 64M x 64/72-Bit SDRAM Modules 168-pin Unbuffered DIMM Modules • Single + 3.3 V ± 0.3 V power supply • 168-pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications • Programmable CAS Latency, Burst Length,
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64/72v64220gu64/72-bit168-pinpc100+3pc133256mddrsdramb22xx
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Contextual Info: HYS 64/72V16300/32220GU SDRAM-Modules 3.3 V 16M x 64/72-Bit 1 Bank SDRAM Module 3.3 V 32M × 64/72-Bit 2 Bank SDRAM Module 168-Pin Unbuffered DIMM Modules • Programmed Latencies: • 168-Pin unbuffered 8-Byte Dual-In-Line SDRAM Modules for PC main memory
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64/72v16300/32220gu64/72-bit168-pinpc100+1pc133
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L24002
Abstract: NAND "read disturb" 1GB Toshiba 512 NAND MLC FLASH BGA PC133 registered reference design CMOS 0.8mm process cross Lithium battery CR2025 sony M2V28S30AVP M5M51008CFP
Contextual Info: Future On Chips MITSUBISHI SEMICONDUCTORS MITSUBISHI ELECTRIC CORPORATION ULSI Memory Memory Series Series ULSI RAM/MCP/FLASH New Data Package http://www.mitsubishichips.com Jul. 2000 MITSUBISHI ELECTRIC L-11002-01 CONTENTS General Business Operation Network and Production Facilities
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l-11002-0164mdram64msdram128msdram+10256msdram144mrdraml24002nand "read disturb" 1gbtoshiba 512 nand mlc flash bgapc133 registered reference designcmos 0.8mm process crosslithium battery cr2025 sonym2v28s30avpm5m51008cfp
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A11 MARKING CODE
Abstract: MARK 8E diode 8M16 MT48LC16M8A2 MT48LC32M4A2 MT48LC8M16A2 micron x8 pc100 sdram PC133 registered reference design
Contextual Info: 128Mb: x4, x8, x16 SDRAM SYNCHRONOUS DRAM MT48LC32M4A2 – 8 Meg x 4 x 4 banks MT48LC16M8A2 – 4 Meg x 8 x 4 banks MT48LC8M16A2 – 2 Meg x 16 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/dramds FEATURES • PC100-, and PC133-compliant
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128mbmt48lc32m4a2mt48lc16m8a2mt48lc8m16a2+10pc100-pc133-compliant096-cycle60-ball11x13a11 marking codemark 8e diode8m16micron x8 pc100 sdrampc133 registered reference design
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8M16
Abstract: MT48LC16M8A2 MT48LC32M4A2 MT48LC8M16A2 TN-48-05 PC133 registered reference design MT48LC16M8A2BB MT48LC16M8A2P
Contextual Info: 128Mb: x4, x8, x16 SDRAM SYNCHRONOUS DRAM MT48LC32M4A2 – 8 Meg x 4 x 4 banks MT48LC16M8A2 – 4 Meg x 8 x 4 banks MT48LC8M16A2 – 2 Meg x 16 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/dramds FEATURES • PC100-, and PC133-compliant
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128mbmt48lc32m4a2mt48lc16m8a2mt48lc8m16a2+10pc100-pc133-compliant096-cycle60-ball025mm8m16tn-48-05pc133 registered reference designmt48lc16m8a2bbmt48lc16m8a2p
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MT48LC16M8A2BB
Abstract: PC133 registered reference design
Contextual Info: 128Mb: x4, x8, x16 SDRAM SYNCHRONOUS DRAM MT48LC32M4A2 – 8 Meg x 4 x 4 banks MT48LC16M8A2 – 4 Meg x 8 x 4 banks MT48LC8M16A2 – 2 Meg x 16 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/dramds FEATURES PIN ASSIGNMENT Top View
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128mbpc100-pc133-compliant096-cycle+8mt48lc32m4a2mt48lc16m8a2mt48lc8m16a254-ball09005aef8091e66d/source09005aef8091e625mt48lc16m8a2bbpc133 registered reference design
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w9864g2gh-7
Abstract: MT48LC8M16A2 sdram controller Memory bank size ADSP21369 128 bit processor schematic ADSP-21367 ADSP21368 ADSP-21368 ADSP21369 ADSP-21369
Contextual Info: Engineer-to-Engineer Note a EE-286 Technical notes on using Analog Devices DSPs, processors and development tools Visit our Web resources http://www.analog.com/ee-notes and http://www.analog.com/processors or e-mail processor.support@analog.com or processor.tools.support@analog.com for technical support.
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ee-286adsp-21368adsp-2137xadsp-21367+9adsp-21369w986432dhw9864g2gh-7mt48lc8m16a2sdram controllermemory bank size adsp21369128 bit processor schematicadsp21368adsp21369
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8M16
Abstract: MT48LC16M8A2 MT48LC32M4A2 MT48LC8M16A2
Contextual Info: 128Mb: x4, x8, x16 SDRAM SYNCHRONOUS DRAM MT48LC32M4A2 – 8 Meg x 4 x 4 banks MT48LC16M8A2 – 4 Meg x 8 x 4 banks MT48LC8M16A2 – 2 Meg x 16 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/datasheets FEATURES • PC100-, and PC133-compliant
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8M16
Abstract: MT48LC16M8A2 MT48LC32M4A2 MT48LC8M16A2 TN-48-05
Contextual Info: 128Mb: x4, x8, x16 SDRAM Features SDRAM MT48LC32M4A2 – 8 Meg x 4 x 4 banks MT48LC16M8A2 – 4 Meg x 8 x 4 banks MT48LC8M16A2 – 2 Meg x 16 x 4 banks For the latest data sheet, refer to Micron’s Web site: www.micron.com Features Figure 1: • PC100- and PC133-compliant
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Contextual Info: HYS 72Vx2xxGR PC100 Registered SDRAM-Modules 3.3 V 168-pin Registered SDRAM Modules 64 MB, 128 MB, 256 MB, 512 MB & 1 GB Densities • 168-pin JEDEC Standard, Registered 8 Byte Dual-In-Line SDRAM Module for PC and Server main memory applications • Programmable CAS Latency, Burst Length,
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72vx2xxgrpc100168-pintsopii-54+3aprl99module256mbit512mbyte
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sandisk micro sd card pin
Abstract: MCP 1Gb nand 512mb dram 130 256K x 16 DRAM FPM cross reference Toshiba NAND MLC FLASH BGA TSOP 48 Package nand memory toshiba MCP 1Gb 512Mb 130 PC133 registered reference design L7103 02bjxx ulsi
Contextual Info: Future On Chips MITSUBISHI SEMICONDUCTORS MITSUBISHI ELECTRIC CORPORATION ULSI Memory Memory Series Series ULSI RAM/MCP/FLASH New Data Package http://www.mitsubishichips.com Jul. 2000 L-11002-01 MITSUBISHI ELECTRIC CONTENTS 1. General 1 2. DRAM 9 3. Low Power SRAM
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l-11002-01l-11003-0isandisk micro sd card pinmcp 1gb nand 512mb dram 130+8256k x 16 dram fpm cross referencetoshiba nand mlc flash bgatsop 48 package nand memory toshibamcp 1gb 512mb 130pc133 registered reference designl710302bjxxulsi
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smd transistor x8
Abstract: 8M16 MT48LC16M8A2 MT48LC32M4A2 MT48LC8M16A2 micron x8 pc100 sdram
Contextual Info: 128Mb: x4, x8, x16 SDRAM Features SDRAM MT48LC32M4A2 – 8 Meg x 4 x 4 banks MT48LC16M8A2 – 4 Meg x 8 x 4 banks MT48LC8M16A2 – 2 Meg x 16 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/dram Features Figure 1: • PC100-, and PC133-compliant
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128mbmt48lc32m4a2mt48lc16m8a2mt48lc8m16a2+9pc100-pc133-compliant192-cycle09005aef8091e66d/source09005aef8091e625128msdramsmd transistor x88m16micron x8 pc100 sdram
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8M16
Abstract: MT48LC16M8A2 MT48LC32M4A2 MT48LC8M16A2 TN-48-05
Contextual Info: 128Mb: x4, x8, x16 SDRAM Features SDRAM MT48LC32M4A2 – 8 Meg x 4 x 4 banks MT48LC16M8A2 – 4 Meg x 8 x 4 banks MT48LC8M16A2 – 2 Meg x 16 x 4 banks For the latest data sheet, refer to Micron’s Web site: www.micron.com Features Figure 1: • PC100- and PC133-compliant
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