transistor bc237 bc337
Abstract: replacement transistor BC337 bc337 TRANSISTOR equivalent bc338 equivalent BC337 TO-92 Generic BC337 circuit example BC160-16 BC337-25 "pin compatible" BC237 BC338 REPLACEMENT
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors NPN Silicon BC337,-16,-25,-40 BC338,-16,-25,-40 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC337 BC338 Unit Collector – Emitter Voltage VCEO 45 25 Vdc Collector – Base Voltage
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bc337bc338226aajunction218a+14msc1621t1msc2404msd1819amv1620transistor bc237 bc337replacement transistor bc337bc337 transistor equivalentbc338 equivalentbc337 to-92 genericbc337 circuit examplebc160-16bc337-25 "pin compatiblebc237bc338 replacement
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BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Switching N–Channel — Depletion 2N5555 1 DRAIN 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDS 25 Vdc Drain – Gate Voltage VDG 25 Vdc Gate – Source Voltage VGS 25 Vdc
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2n5555226aamsc1621t1msc2404+7msd1819amv1620mv1624mv1636mv1640mv1642bc237
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MPF102 equivalent transistor
Abstract: mpf102 replacement BC237 MPF102 model MPF102 Transistor 2N1893 equivalent replacement of MPF102 JFET 2N3019 and applications BSS89 APPLICATION mpf102 application note
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF Amplifier N–Channel — Depletion MPF102 1 DRAIN 3 GATE 2 SOURCE MAXIMUM RATINGS Symbol Value Unit Drain – Source Voltage Rating VDS 25 Vdc Drain – Gate Voltage VDG 25 Vdc Gate – Source Voltage VGS – 25
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mpf102226aamsc1621t1msc2404+16msd1819amv1620mv1624mv1636mv1640mv1642mpf102 equivalent transistormpf102 replacementbc237mpf102 modelmpf102 transistor2n1893 equivalentreplacement of mpf102 jfet2n3019 and applicationsbss89 applicationmpf102 application note
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BC237
Abstract: BF245 sot-23 JFET
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Ċ General Purpose Transistor MMBF5457LT1 N–Channel 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Drain–Gate Voltage VDG 25 Vdc VGS r 25 Vdc IG 10 mAdc
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mmbf5457lt1236abmsc1621t1msc2404+8msd1819amv1620mv1624mv1636mv1640bc237bf245sot-23 jfet
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bc327 replacement
Abstract: equivalent components for transistor bc328 BC237 bf391 t Motorola MVAM125 bc327 equivalent SOT23 BC327-25
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors PNP Silicon BC327,-16,-25 BC328,-16,-25 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC327 BC328 Unit Collector – Emitter Voltage VCEO –45 –25 Vdc Collector – Base Voltage
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bc327bc328226aat218a+11msc1621t1msc2404msd1819amv1620bc327 replacementequivalent components for transistor bc328bc237bf391 tmotorola mvam125bc327 equivalent sot23bc327-25
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motorola JFET 2N3819
Abstract: Y12 SO-16 transistor u310 VK200 rfc BC238 h parameter BC237 6 21 X2 marking code sot 363 BF245 common emitter amplifier for transistor bc107 sod-123 marking L2s
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Transistor N–Channel 2 SOURCE MMBFU310LT1 Motorola Preferred Device 3 GATE 1 DRAIN 3 MAXIMUM RATINGS Rating 1 Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Gate–Source Voltage VGS 25 Vdc IG 10 mAdc Symbol
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mmbfu310lt1236abgat218amsc1621t1+15msc2404msd1819amv1620mv1624mv1636motorola jfet 2n3819y12 so-16transistor u310vk200 rfcbc238 h parameterbc2376 21 x2 marking code sot 363bf245common emitter amplifier for transistor bc107sod-123 marking l2s
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2N5457 MOTOROLA
Abstract: 2N5457 equivalent BC237 transistor 2N5457
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFETs Ċ General Purpose N–Channel — Depletion 2N5457 1 DRAIN *Motorola Preferred Device 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDS 25 Vdc Drain – Gate Voltage VDG 25 Vdc
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2n5457226aamsc1621t1msc2404+10msd1819amv1620mv1624mv1636mv1640mv16422n5457 motorola2n5457 equivalentbc237transistor 2n5457
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motorola JFET 2N3819
Abstract: C4 SOT-323 equivalent transistor 2N1711 mvm010 marking code C5 sot23 BC237 JFET 2N3819 MOTOROLA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF Amplifier Transistor N–Channel MMBFJ309LT1 MMBFJ310LT1 2 SOURCE 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Gate–Source Voltage VGS 25 Vdc IG 10 mAdc Gate Current
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mmbfj309lt1mmbfj310lt1236abmsc1621t1+11msc2404msd1819amv1620mv1624motorola jfet 2n3819c4 sot-323equivalent transistor 2n1711mvm010marking code c5 sot23bc237jfet 2n3819 motorola
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BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Low Voltage Output Amplifier Surface Mount MSD1328-RT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 25 Vdc Collector–Emitter Voltage
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msd1328-rt1colle218amsc1621t1msc2404+7msd1819amv1620mv1624mv1636mv1640mv1642bc237
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bc238 equivalent
Abstract: BC237 equivalent bc237 equivalent transistor bc237c equivalent NPN Transistor BC238B equivalent BC237 BC238 h parameter bc237 pin lay-out BC237 sot23 bc237v
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC237,A,B,C NPN Silicon BC238B,C BC239,C COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC237 BC238 BC239 Unit Collector – Emitter Voltage VCEO 45 25 25 Vdc Collector – Emitter Voltage
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bc237bc238bbc239bc238+13226aare218amsc1621t1msc2404bc238 equivalentbc237 equivalentbc237 equivalent transistorbc237c equivalentnpn transistor bc238b equivalentbc238 h parameterbc237 pin lay-outbc237 sot23bc237v
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BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc VGS r – 25 Vdc 2 CASE 318 – 08, STYLE 10
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mmbfj177lt1236abmsc1621t1msc2404+6msd1819amv1620mv1624mv1636mv1640bc237
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84-8510.0040
Abstract: 61-9707.7 EAO series 30 illumination led eao 02 SERIES 7000-60
Contextual Info: EAO – Your Expert Partner for Human Machine Interfaces EAO – Your Expert Partner for Human Machine Interfaces Series 84 | Product Selector Dimensions Mounting holes Example: Ø25 mm 6 max. 25 X = 31 at Ø 25 X = 31 at Ø 32 X = 29 at Ø 40 21.2 +0.2
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com/84std-pss84std84-8510.004061-9707.7+3eao series 30 illumination ledeao 02 series7000-60
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illuminated pushbutton symbol
Abstract: eao 02 SERIES 92-851.342 7000-60 10-2602.3205L
Contextual Info: EAO – Your Expert Partner for Human Machine Interfaces EAO – Your Expert Partner for Human Machine Interfaces Series 84 PCB | Product Selector Dimensions Mounting holes Example: Ø25 mm 25 4 max. Z Z = 18 at Ø 25 Z = 18 at Ø 32 Z = 16 at Ø 40 21.2
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com/84pcb-ps3202lilluminated pushbutton symboleao 02 series+392-851.3427000-6010-2602.3205l
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MPF910 equivalent
Abstract: .model for MPF910 BC237 TRANSISTOR mpf910
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS Switching MPF910 N–Channel — Enhancement 3 DRAIN 2 GATE 1 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit VDS 60 Vdc VGS VGSM ± 20 ± 40 Vdc Vpk ID IDM 0.5 1.0 Adc Total Device Dissipation @ TA = 25°C Derate above 25°C
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mpf910mfe910226aemax218a+9msc1621t1msc2404msd1819amv1620mv1624mpf910 equivalentmodel for mpf910bc237transistor mpf910
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MVAM125
Abstract: MVAM-1
Contextual Info: MVAM125 SILICON VARACTOR DIODE PACKAGE STYLE DESCRIPTION: The ASI MVAM125 is a Silicon Tuning Varactor Diode. FEATURES INCLUDE: • 15:1 Minimum Tuning Range • Q - 150 Minimum MAXIMUM RATINGS IF 50 mA VR 28 V PDISS 2800 mW @ TC = 25 C TJ -55 C to +125 C
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mvam125ct1/ct10mvam-1 |
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MVAM108
Abstract: varactor diode datasheet varactor
Contextual Info: MVAM108 SILICON VARACTOR DIODE PACKAGE STYLE DESCRIPTION: The ASI MVAM108 is a Silicon Tuning Varactor Diode. FEATURES INCLUDE: • 15:1 Minimum Tuning Range • Q - 150 Minimum MAXIMUM RATINGS IF 50 mA VR 12 V PDISS 280 mW @ TC = 25 C TJ -55 C to +125 C TSTG
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mvam108varactor diode datasheetvaractor |
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MVAM115
Abstract: varactor diode datasheet MVAM115 TUNING DIODE symbol of varactor diode and equivalent circuit tuning varactor varactor APPLICATION
Contextual Info: MVAM115 SILICON VARACTOR DIODE PACKAGE STYLE DESCRIPTION: The ASI MVAM115 is a Silicon Tuning Varactor Diode. FEATURES INCLUDE: • 15:1 Minimum Tuning Range • Q - 150 Minimum MAXIMUM RATINGS IF 50 mA VR 18 V PDISS 280 mW @ TC = 25 C TJ -55 C to +125 C TSTG
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mvam115ct1/ct10varactor diode datasheetmvam115 tuning diode+3symbol of varactor diode and equivalent circuittuning varactorvaractor application
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marking code SAD
Abstract: ZMI 2 NA AZ 2535 marking code azk MBRS2535CT w11a rjr ce MARKING 1ft
Contextual Info: s TAIWAN SEMICONDUCTOR MBRS2535CT - MBRS25150CT 25 AMPS. Surface Mount Schottky Barrier Rectifiers D*PAK RoHS COM PLIANCE MVA7<ii $ - Features •fr <> <5*- ■> ■> ❖ b ■> ■t' <> <5*- xk:i w. *eM u! ic|1 A-j' r,'Zii iì; j :?k I 1 For surface mounted application
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w11acemarking code sadzmi 2 naaz 2535+5marking code azkmbrs2535ctw11arjr cemarking 1ft
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diode BY 226
Abstract: MVAM2 diode 226 MPN3401 MPN3403 mbd201 PN3404 MBD102 MVAM115 MBD502
Contextual Info: A M Tuning . . . designed fo r electronic tuning of A M radios, receivers, and general A M frequency control. Device Type " V " Ct . V r = 1 V, f = I MHz PF MVAM 2 MVAM115 MVAM125 Min. Max. 280 440 440 380 560 Cap. Ratio 1-25 V min. V- V— Q @1 V
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mvam115mvam125var0310/ia+12mpn3401mpn3402mpn3403pn3404mpn3411mpn3412diode by 226mvam2diode 226mbd201mbd102mbd502
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MBRS2535CT
Abstract: MARKING 1ft wi fi marking code .26d
Contextual Info: MBRS2535CT - MBRS25150CT TAIWAN SEM ICONDUCTO R RoHS COMPLIANCE 25 AMPS. Surface Mount Schottky Barrier Rectifiers D*PAK MVA7<ii —- Features •fr <> <5*■> ■> ❖ b - ¿ Kl1Vi u; ¿¿zìi j:? ic| kI1AV. I Fur s u rfa c e m o u n te d a p p lic a tio n
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mbrs2535ctmbrs25150ctmarking 1ftwi fi+1marking code .26d
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Contextual Info: S3C2440X01 32-BIT RISC MICROPROCESSOR USER'S MANUAL Preliminary Revision 0.05 (September 25, 2003) 2003.09.25 S3C2440X RISC MICROPROCESSOR 1 PRODUCT OVERVIEW PRODUCT OVERVIEW INTRODUCTION This manual describes SAMSUNG's S3C2440X 16/32-bit RISC microprocessor. SAMSUNG’s S3C24440X is
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s3c2440x0132-bits3c2440x16/32-bit+2s3c24440x289-fbga-1414
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LM7m
Contextual Info: PREPARED BY: SPEC No. LC99404 DATE FILE No. APPROVED BY: DATE LIQUID CRYSTAL DISPLAY GROUP SHARP CORPORATION ISSUE APR. 28.1999 PAGE 25 Pages REPREZNTATIVE DIVISION ENGINEERING DEPARTMENT I DUTY LCD DEVELOPMENT CENTER DUTY LIQUID CRYSTAL DISPLAY GROUP SPECIFICATION
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lc99404lm7ms62300260bbs-u-012-01+1lm7m
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WT transistor
Abstract: BC237 S11S 2n441 BF244B 2N3799 JFET BF245 C4 SOT-323 2N3819 MOTOROLA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Transistor N–Channel 2 SOURCE MMBF5484LT1 Motorola Preferred Device 3 GATE 1 DRAIN 3 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Forward Gate Current 1 Symbol Value Unit VDG 25 Vdc
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mmbf5484lt1236abc218amsc1621t1+15msc2404msd1819amv1620mv1624mv1636mv1640wt transistorbc237s11s2n441bf244b2n3799jfet bf245c4 sot-3232n3819 motorola
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low cost smd capacitor 0.1 mf
Abstract: kzg capacitor
Contextual Info: RECOMMENDED REFLOW CONDITION CAPACITOR SERIES TABLE, CONTENTS PXA Conductive Polymer PX Electrolyte Type PS Upgrade! Surface Mount Rated Terminal voltage range type Vdc Capacitance range (mF) Vertical type, Pb Free, super low ESR 105C 2,000 hours SMD 2.5 to 25
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e1001clow cost smd capacitor 0.1 mfkzg capacitor |
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