22JUN2001 Search Results

M29W320DT

Abstract: M29W320D M29W320DB TFBGA48
Contextual Info: M29W320DT M29W320DB 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ACCESS TIME: 70, 90ns

A65A

Contextual Info: LMH6642/6643/6644 3V, Low Power, 130MHz, 75mA Rail-to-Rail Output Amplifiers General Description The LMH664X family true single supply voltage feedback amplifiers offer high speed 130MHz , low distortion (−62dBc), and exceptionally high output current (approximately 75mA) at low cost and with reduced power consumption when compared against existing devices with similar

FB300

Abstract: M50FW080 PLCC32 TSOP32
Contextual Info: M50FW080 8 Mbit 1M x8, Uniform Block 3V Supply Firmware Hub Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 3V to 3.6V for Program, Erase and Read Operations – VPP = 12V for Fast Program and Fast Erase (optional)

M29F016D

Contextual Info: M29F016D 16 Mbit 2Mb x8, Uniform Block 5V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 5V ±10% for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 55, 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte typical

M48T129V

Abstract: M48T129Y
Contextual Info: M48T129Y M48T129V 5.0 or 3.3 V, 1 Mbit 128 Kbit x 8 TIMEKEEPER SRAM Features • Integrated, ultra low power SRAM, real-time clock, power-fail control circuit, battery, and crystal ■ BCD coded century, year, month, day, date, hours, minutes, and seconds

Contextual Info: M29W320DT M29W320DB 32 Mbit 4Mbx8 or 2Mbx16, Non-uniform Parameter Blocks, Boot Block , 3V Supply Flash memory Feature summary „ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) „ Access time: 70, 90ns

SOH28

Abstract: M48Z35AV
Contextual Info: M48Z35AV 5.0V or 3.3V, 256Kbit 32Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Battery low flag (BOK) ■ Automatic power-fail chip deselect and WRITE

M41ST85W

Abstract: M4T28-BR12SH1 M4T32-BR12SH1 M4T32-BR12SH6 SOH28
Contextual Info: M41ST85W 3.0/3.3V I2C combination serial RTC, NVRAM supervisor and microprocessor supervisor Features • ■ SNAPHAT SH battery & crystal Automatic battery switchover and WRITE protect for: – Internal serial RTC and – External low power SRAM (LPSRAM)

PBT GF20

Abstract: PBT GF20 AMP 144969 144969-x AMP PBT GF20 PBT GF20 tyco
Contextual Info: TH I S DRAW I NG I S U N P U B L I S H E D . DI F F US I ON R E S T R E I N T E _ C O P Y R I G H T 20 BY TYCO ELECTRONICS R E L E A S E D F OR P U B L I C A T I O N L I B R E A L A DI F F U S I O N ALL RIGHTS RESERVED. CORPORATION. TOUS D R O I T S R E S E R V E S

SB2100

Abstract: SB270 SB280 SB290
Contextual Info: LITE-ON SEMICONDUCTOR SB270 THRU SB2100 REVERSE VOLTAGE - 70 to 100 Volts FORWARD CURRENT - 2.0 Amperes SCHOTTKY BARRIER RECTIFIERS DO-15 FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop High current capability

M50FW080

Abstract: PLCC32 TSOP32
Contextual Info: M50FW080 8-Mbit 1 Mb x8, Uniform Block 3-V supply, Firmware Hub Flash memory Feature summary • Supply voltage – VCC = 3 V to 3.6 V for Program, Erase and Read operations – VPP = 12 V for fast program and fast erase (optional) PLCC32 (K) ■ Two interfaces

A94A

Abstract: A94A Marking deboo CLC425 LMH6624 MDC
Contextual Info: LMH6624 Ultra Low Noise Wideband Operational Amplifier General Description Features The LMH6624 combines wide bandwidth 1.5 GBW with , 2.3pA/ ) and ultra very low input noise (0.92nV/ low dc errors (100µV VOS, ± 0.1µV/˚C drift) providing a very precise operational amplifier with wide dynamic range. This

A65A

Abstract: 3V10V
Contextual Info: LMH6642/6643/6644 3V, Low Power, 130MHz, 75mA Rail-to-Rail Output Amplifiers General Description The LMH664X family true single supply voltage feedback amplifiers offer high speed 130MHz , low distortion (−62dBc), and exceptionally high output current (approximately 75mA) at low cost and with reduced power consumption when compared against existing devices with similar

STANDARD DIN 6784

Contextual Info: M48Z35AV 5.0 V or 3.3 V, 256 Kbit 32 Kbit x 8 ZEROPOWER SRAM Not recommended for new design Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Battery low flag (BOK) ■

Contextual Info: M50FW080 8 Mbit 1Mb x8, Uniform Block 3V Supply Firmware Hub Flash Memory • SUPPLY VOLTAGE – VCC = 3V to 3.6V for Program, Erase and Read Operations – VPP = 12V for Fast Program and Fast Erase (optional) ■ TWO INTERFACES – Firmware Hub (FWH) Interface for embedded

Contextual Info: M29W320DT M29W320DB 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ACCESS TIME: 70, 90ns

M29W320DT

Abstract: Numonyx JESD97 M29W320D M29W320DB TFBGA48
Contextual Info: M29W320DT M29W320DB 32 Mbit 4Mbx8 or 2Mbx16, Non-uniform Parameter Blocks, Boot Block , 3V Supply Flash memory Feature summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Access time: 70, 90ns

TECHNICAL SPECIFICATION DATA SHEET GOLD 705

Abstract: M41ST85W M4T28-BR12SH1 M4T32-BR12SH1 M4T32-BR12SH6 SOH28 AN934 24JAN NVRAM
Contextual Info: M41ST85W 3.0/3.3 V I2C combination serial RTC, NVRAM supervisor and microprocessor supervisor Features SNAPHAT SH battery & crystal • Automatic battery switchover and WRITE protect for: – Internal serial RTC and – External low power SRAM (LPSRAM) ■

L6363

Abstract: TQFP100
Contextual Info: CD00002472 Rev 1.0 ACTIVE PAGE A PRML READ/WRITE CHANNEL Datasheet DOCUMENT HISTORY Version Rev 1.0 Release Date No history included due to Migration. See it in Edocs. Change Qualifier Migration CD00002472 Rev 1.0 ACTIVE PAGE B DOCUMENT APPROVAL Name Function

JESD97

Abstract: M29F016D A12A20
Contextual Info: M29F016D 16 Mbit 2Mb x8, Uniform Block 5V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 5V ±10% for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 55, 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte typical ■

Contextual Info: M29W320DT M29W320DB 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ACCESS TIME: 70, 90ns

Contextual Info: M50FW080 8 Mbit 1Mb x8, Uniform Block 3V Supply Firmware Hub Flash Memory • SUPPLY VOLTAGE – VCC = 3V to 3.6V for Program, Erase and Read Operations – VPP = 12V for Fast Program and Fast Erase (optional) ■ TWO INTERFACES – Firmware Hub (FWH) Interface for embedded

M48Z35AV

Abstract: SOH28
Contextual Info: M48Z35AV 5.0 V or 3.3 V, 256 Kbit 32 Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Battery low flag (BOK) ■ Automatic power-fail chip deselect and WRITE

Contextual Info: LITE-ON SEMICONDUCTOR SB270 THRU SB2100 REVERSE VOLTAGE - 70 to 100 Volts FORWARD CURRENT - 2.0 Amperes SCHOTTKY BARRIER RECTIFIERS DO-15 FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop High current capability