A12A20 Search Results

M29W320DT

Abstract: M29W320D M29W320DB TFBGA48
Contextual Info: M29W320DT M29W320DB 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ACCESS TIME: 70, 90ns

samsung NAND FSR

Abstract: 29cd16 NAND IC s CIRCUIT DIAGRAM OF 15 INCH SAMSUNG MONITOR 264Byte
Contextual Info: KM29N16000 2M x 8 Bit NAND Flash Memory SEMICONDUCTOR PRELIMINARY- June 1994 FEATURES GENERAL DESCRIPTION • Single 5 - volt Supply • Organization - Memory Cell Array : 2M +64K x 8 - Data Register : (258 + 8) x 8 • Automatic Program and Erase - Page Program : (256 + 8)Byte

M28W320BB

Abstract: M28W320BT
Contextual Info: M28W320BT M28W320BB 32 Mbit 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output – VPP = 12V for fast Program (optional) ■

M29DW323D

Abstract: TSOP48 outline M29DW323DB M29DW323DT M29DW324D M29DW324DB M29DW324DT
Contextual Info: M29DW324DT M29DW324DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional) ACCESS TIME: 70, 90ns

M36DR432AD

Abstract: M36DR432BD
Contextual Info: M36DR432AD M36DR432BD 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit (256Kb x16) SRAM, Multiple Memory Product FEATURES SUMMARY • Multiple Memory Product Figure 1. Package – 1 bank of 32 Mbit (2Mb x16) Flash Memory – 1 bank of 4 Mbit (256Kb x16) SRAM

D8000-DFFF

Contextual Info: M28W160BT M28W160BB 16 Mbit 1Mb x16, Boot Block Low Voltage Flash Memory PRELIMINARY DATA • SUPPLY VOLTAGE – VDD = 2.7V to 3.6V: for Program, Erase and Read – VDDQ = 1.65V or 2.7V: Input/Output option – VPP = 12V: optional Supply Voltage for fast

Contextual Info: M28W800BT M28W800BB 8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory PRELIMINARY DATA • SUPPLY VOLTAGE – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = 1.65V or 2.7V for I/O Buffers – VPP = 12V for fast Program (optional) ■ ACCESS TIME

Contextual Info: M58CR064C, M58CR064D M58CR064P, M58CR064Q 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Package – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)

M29F016D

Contextual Info: M29F016D 16 Mbit 2Mb x8, Uniform Block 5V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 5V ±10% for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 55, 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte typical

M29W017D

Abstract: TFBGA48
Contextual Info: M29W017D 16 Mbit 2Mb x8, Uniform Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIME: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte typical

A0-A21

Abstract: CR10 M58WR064EB M58WR064ET VFBGA56
Contextual Info: M58WR064ET M58WR064EB 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Package – VDD = 1.65V to 2.2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)

code lock circuit flow chart

Abstract: M28W320ECB M28W320ECT M28W320
Contextual Info: M28W320ECT M28W320ECB 32 Mbit 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output ■ – VPP = 12V for fast Program (optional)

M36DR432A

Abstract: M36DR432B
Contextual Info: M36DR432A M36DR432B 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit (256K x16) SRAM, Multiple Memory Product FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDDF = VDDS =1.65V to 2.2V ■ – VPPF = 12V for Fast Program (optional) ACCESS TIME: 100,120ns

M29DW324D

Abstract: M29DW324DB M29DW324DT TFBGA48 TFGBA48
Contextual Info: M29DW324DT M29DW324DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional)

M36W216

Abstract: M36W216B M36W216T
Contextual Info: M36W216T M36W216B 16 Mbit 1Mb x16, Boot Block Flash Memory and 2 Mbit (128K x16) SRAM, Multiple Memory Product PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE – VDDF = 2.7V to 3.3V SRAM ■ 2 Mbit (128K x 16 bit) – VDDS = VDDQF = 2.7V to 3.3V ■

M59MR032C

Abstract: M59MR032D w849 ADQ14
Contextual Info: M59MR032C M59MR032D 32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory • SUPPLY VOLTAGE – VDD = VDDQ = 1.65V to 2.0V for Program, Erase and Read ■ – VPP = 12V for fast Program (optional) MULTIPLEXED ADDRESS/DATA ■ SYNCHRONOUS / ASYNCHRONOUS READ

M29W320E

Abstract: M29W320EB M29W320ET TFBGA48
Contextual Info: M29W320ET M29W320EB 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)

IS1651

Abstract: M29DW323D M29DW323DB M29DW323DT TFBGA48
Contextual Info: M29DW323DT M29DW323DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)

27721

Contextual Info: iiili 16 Megabit 2M x 8-Bit Multi-Purpose Flash _ SST39VF016Q_ Advance Information FEATURES: • Organized as 2 M X 8 • Latched Address and Data • Single 2.7-3.6V Read and Write Operations • Fast Sector Erase and Byte Program:

M36DR232A

Abstract: M36DR232B M36DR232
Contextual Info: M36DR232A M36DR232B 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit (128K x16) SRAM, Multiple Memory Product FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDDF = VDDS =1.65V to 2.2V ■ – VPPF = 12V for Fast Program (optional) ACCESS TIME: 100,120ns

CSP-60

Abstract: LH28F320BJHB-PBTL90
Contextual Info: Date 32M x8/x16 Flash Memory LH28F320BJHB-PBTL90 Nov. 2. 2000 LHF32J16 ●Handle this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited without the express written

LH28F320BJB-PBTL90

Contextual Info: Date 32M x8/x16 Flash Memory LH28F320BJB-PBTL90 Oct. 30. 2000 LHF32J14 ●Handle this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited without the express written

LH28F320BJB-PTTL90

Contextual Info: Date 32M x8/x16 Flash Memory LH28F320BJB-PTTL90 Oct. 18. 2000 LHF32J10 ●Handle this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited without the express written

Contextual Info: M59DR032EA M59DR032EB 32 Mbit 2Mb x 16, Dual Bank, Page 1.8V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE – VDD = VDDQ = 1.65V to 2.2V for Program, Erase and Read Figure 1. Packages – VPP = 12V for fast Program (optional)