27721 Search Results

MS25081

Abstract: EN-12449 TL-10632 MS27721
Contextual Info: i CATALOG o J /] h a c\J H MICRO SWITCH FREEPORT IL L IN O IS A OF D IVISIO N IF C CODE U S * HONEYWELL SWITCH - TOGGLE L IS T IN G 112TW22 SERIES CHART 1 CAT. LIST. RECOMMENDED LOCKING COMBINATIONS II2TW22-I& A,B,D,E,F,GjH,J,K,L,M,N,P CIRCUIT WITH TOGGLE IN

DBB08G

Abstract: DBB08 DBB08C
Contextual Info: Ordering number :EN2772B DBB08 Diffused Junction Silicon Diode 0.8A Single-Phase Bridge Rectifier Features Package Dimensions • Plastic molded structure and ultrasmall package making it easy to make DBB08-applied sets smaller. · Two type of package available, surface mount type

32107

Abstract: SST27SF256 oasis TTL 7452 A115 32-PIN A103 A114 Tekelec TA 27721
Contextual Info: 256 Kilobit 32K x 8 SuperFlash MTP SST27SF256 Preliminary Specifications FEATURES: • 5.0V Read Operation (4.5V to 5.5V) • Superior Reliability – Endurance: At least 1000 Cycles – Greater than 100 years Data Retention • Low Power Consumption – Active Current: 20 mA (typical)

Contextual Info: Ordering number : EN2772C DBB08 0.8A Single-Phase Bridge Rectifier http://onsemi.com Features • • Plastic molded structure and ultrasmall package making it easy to make DBB08-applied sets smaller. Glass passivation for high reliability. Specifications

TA 7644 BF

Abstract: cmos power TCP 8108 NEXUS FLASH ERASE oasis TCP 8108 32-PIN F01A SST31LH041 830049
Contextual Info: 4 Megabit Flash + 1 Megabit SRAM ComboMemory SST31LH041 Advance Information FEATURES: • Organized as 512K x 8 Flash + 128K x 8 SRAM • Latched Address and Data for Flash • Single 3.0-3.6V Read and Write Operations • Flash Fast Sector Erase and Byte Program:

Contextual Info: iiili 8 Megabit 1M x 8-Bit Multi-Purpose Flash _ SST39VF080Q_ Advance Information FEATURES: • Organized as 1M x 8 • Latched Address and Data • Single 2.7-3.6V Read and Write Operations • Fast Sector Erase and Byte Program:

Contextual Info: 21Ü 16 Megabit FlashBank Memory SST38UF166 Advance Information FEATURES: • • • Single 2.2-2.8V Read and Write Operations Read Access Time Separate Memory Banks for Code or Data - - Latched Address and Data Superior Reliability End of Write Detection

Contextual Info: 8 Megabit Flash + 2 Megabit SRAM ComboMemory SST32LH802 Advance Inform ation FEATURES: • Organized as 512 K x16 Flash + 128Kx16 SRAM or 512K x8 x2 Flash + 128K x8 x2 SRAM • Single 3.0-3.6V Read and Write Operations • Concurrent Operation - Read from or write to SRAM while erase/

Contextual Info: 512 Kilobit 64K x 8 SuperFlash MTP SST37VF512 Prelim inary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention

1/CHN 326

Contextual Info: 21Ü 2 Megabit 256K x 8 Multi-Purpose Flash SST39SF020 Data Sheet FEATURES: • • • Organized as 256 K X 8 Fast Sector Erase and Byte Program: Single 5.0V Read and Write Operations - Superior Reliability - • • Active Current: 20 mA (typical) Standby Current: 10 |iA (typical)

27721

Contextual Info: iiili 16 Megabit 2M x 8-Bit Multi-Purpose Flash _ SST39VF016Q_ Advance Information FEATURES: • Organized as 2 M X 8 • Latched Address and Data • Single 2.7-3.6V Read and Write Operations • Fast Sector Erase and Byte Program:

MIL-T-55155

Abstract: ali 3329 ali m 3329 BA 5979 5740-14 SE181 SE191D01 57b9 MZ-157 EMC 8200 E
Contextual Info: Single - Turret Standoffs ADVANCED INTERCONNECTIONS' 5 Energy Way, P.O. Box 1342, West Warwick, Rl 02893 • Tel. 401-823-5200 • FAX 401-823-8723 •TWX 9102403454 EMC*Product "STS" Series Plating: 400p" Tin terminal, 200|i" Cadm ium Chrom ate base/eyelet

Contextual Info: 512 Kilobit 64K x 8 Page Mode EEPROM SST29EE512A / SST29LE512A / SST29VE512A Data Sheet FEATURES: • Single Voltage Read and Write Operations - 5.0V-only for SST29EE512A - 3.0-3.6V for SST29LE512A - 2.7-3.6V for SST29VE512A • Superior Reliability - Endurance: 100,000 Cycles (typical)

CHN 512

Abstract: CHN 314 1/CHN 852
Contextual Info: 21Ü 512 Kilobit 64K x 8 Multi-Purpose Flash SST39SF512 Data Sheet FEATURES: • • • Organized as 64K X 8 Fast Sector Erase and Byte Program: Single 5.0V Read and Write Operations - Superior Reliability - • • Active Current: 20 mA (typical) Standby Current: 10 |iA (typical)

Contextual Info: 512 Kbit /1 Mbit / 2 Mbit / 4 Mbit High Speed Multi-Purpose Flash SST39LH512 / SST39LH010 / SST39LH020 / SST39LH040 Advance Information FEATURES: • • • Organized as 64K x8/ 128K x8/ 256K x8/ 512K x8 Superior Reliability Uniform 4 KByte sectors Fast Read Access Time:

QFP 87c51

Abstract: intel 87C51 INSTRUCTION SET Taiwan Oasis Enterprise Co., LTD SST89C59 Atmel 8051 Microcontrollers SST89C54-33I-NJ-XXXX LQFP-44 PLCC-44 SST89C54 SST89C58
Contextual Info: FlashFlex51 MCU SST89C54 / SST89C58 / SST89C59 Preliminary Specifications FEATURES: • Multi-Purpose 8-bit 8051 Compatible Microcontroller Unit with Embedded SuperFlash Memory for Flexibility • Three 16-bit Timer/Counter • Programmable Serial Port UART

Design Considerations for the SST FlashFlex51 Family Microcontroller

Abstract: Actron endrich Oasis actron international 6812 microcontroller NORTH AMERICA SALES AND DISTRIBUTION Northern Design Electronics Thorson Pacific 522-1150
Contextual Info: Design Considerations for the SST FlashFlex51 Family Microcontroller Application Note August 1999 1.0 INTRODUCTION • The following design considerations outline applications of generally accepted PCB design practices to prevent data corruption issues that could be encountered when

oasis

Abstract: 29VE020 SST29EE020 SST29LE020 SST29VE020 ms-1307
Contextual Info: 2 Megabit 256K x 8 Page Mode EEPROM SST29EE020 / SST29LE020 / SST29VE020 Data Sheet FEATURES: • Single Voltage Read and Write Operations – 5.0V-only for the SST29EE020 – 3.0-3.6V for the SST29LE020 – 2.7-3.6V for the SST29VE020 • Superior Reliability

CHN 345 X

Contextual Info: 4 Megabit 512K x 8 SuperFlash MTP SST37VF040 Prelim inary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention

Contextual Info: 21Ü 1 Megabit 128K x 8 Multi-Purpose Flash SST39SF010 Data Sheet FEATURES: • Organized as 128K X 8 • Single 5.0V Read and Write Operations • Superior Reliability - Endurance: 100,000 Cycles (typical) - Greater than 100 years Data Retention Low Power Consumption:

29EE010

Abstract: CI 7446 29LE010 SST29EE010 SST29LE010 SST29VE010 29EE010-120 29EE010-90 Taiwan Oasis Enterprise Co., LTD
Contextual Info: 1 Megabit 128K x 8 Page Mode EEPROM SST29EE010, SST29LE010, SST29VE010 Data Sheet FEATURES: • Single Voltage Read and Write Operations – 5.0V-only for the 29EE010 – 3.0V-only for the 29LE010 – 2.7V-only for the 29VE010 • Superior Reliability – Endurance: 100,000 Cycles (typical)

DBB08C

Abstract: DBB08 DBB08G 27721
Contextual Info: Ordering number : EN 2772B DBB08 N0.2772B Diffused Junction Silicon Diode 0.8A Single-Phase Bridge Rectifier Features • Plastic molded structure and ultrasmall package making it easy to make DBB08-applied sets smaller. •Two types of packages available, surface mount type and insertion type.

Equivalent of sw2 354

Abstract: sw2 354 8080 microprocessor Architecture Diagram cmos power TCP 8108 oasis F-173
Contextual Info: 8 Megabit Flash + 2 Megabit SRAM ComboMemory SST32LH802 Advance Information FEATURES: • Organized as 512K x16 Flash + 128K x16 SRAM or 512K x8 x2 Flash + 128K x8 x2 SRAM • Single 3.0-3.6V Read and Write Operations • Concurrent Operation – Read from or write to SRAM while

NEXUS FLASH ERASE

Abstract: 353 flash oasis 32-PIN F01A SST31LH021 31LH021
Contextual Info: 2 Megabit Flash + 1 Megabit SRAM ComboMemory SST31LH021 Advance Information FEATURES: • Organized as 256K x8 flash + 128K x8 SRAM • Latched Address and Data for Flash • Single 3.0-3.6V Read and Write Operations • Flash Fast Sector-Erase and Byte-Program: