SEP02 Search Results

Contextual Info: Data Sheet Rev.1.0 23.11.2010 2GB DDR2 – SDRAM registered DIMM Features: • 240 Pin RDIMM SEP02G72E2BF2SA-30R 2GB PC2-5300 in FBGA Technology RoHS compliant •      Options:  Data Rate / Latency DDR2 533 MTs / CL4 DDR2 667 MT/s / CL5

Contextual Info: Data Sheet Rev.1.1 14.04.2010 2GB DDR2 – SDRAM registered DIMM Features: • 240 Pin RDIMM SEP02G72D1BH2MT-25R • 2GB PC2-6400 in FBGA Technique   RoHS compliant Options:  Frequency / Latency DDR2 800MHZ CL6 667 MHz CL5  Module densities 1024MB with 18 dies and 2 ranks

CCIR601

Abstract: TRW2242
Contextual Info: VIDEO OVERSAMPLING SMD FILTERS RA SERIES • Reflowable • Surface mount compatibility • Flat or Sinx/x versions • Washable • Small size, low cost • Luminance and Chrominance versions With reduced analogue filter costs resulting from oversampling techniques, there is an increased

P75N02LDG

Abstract: transistor P75N02LDG Niko Semiconductor p75n02ldg P75N02LD dpak code field effect transistor TO252-DPAK
Contextual Info: N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM P75N02LDG TO-252 DPAK Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25 5mΩ 75A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

A94A

Abstract: A94A Marking deboo CLC425 LMH6624 MDC
Contextual Info: LMH6624 Ultra Low Noise Wideband Operational Amplifier General Description Features The LMH6624 combines wide bandwidth 1.5 GBW with , 2.3pA/ ) and ultra very low input noise (0.92nV/ low dc errors (100µV VOS, ± 0.1µV/˚C drift) providing a very precise operational amplifier with wide dynamic range. This

Contextual Info: Alle techie lorbehallen/ ill tijtls ttsm ti JELQ o a 7ZZ. Ht P W s "sl’V s s s V J if 1 t - -‘-ids . /àr1 \ / J i:Ü T.rT oiQriL>Hi.O T 11 R u b b e r gr ommet opt io n o l 1 “o ' CT^l Dol. Deloil 28 -M A R -0 2 CV Insp. Slond. 09 6 7 009 04 2 6

Contextual Info: 1. Dimensions: M a x - - XFMRS so lation 385 Vlax - 0 . 8 0 0 • Sp ecification s: @25°C 3. Ele ctrical yyw w XP0013T6C o 1500 Vrm s T u rn s Ratio: 1 4 - 1 2 : ( 1 - 2 - 3 ) = 1:2CT ±3% T u rn s Ratio: ( 5 - 7 ) : ( 1 0 - 8 ) = 1:1 .36 PR OCR:

NCP4115

Abstract: NCP4100 200v npn 3a d2pak NCP1450 Bipolar Power Transistor Data 400V igbt dc to dc buck converter 12V to 300V dc dc converter step-up NCP1650 NCP1204 DL135
Contextual Info: Rev. 10, 3Q02 SGD503/D POWER MANAGEMENT SOLUTIONS ANALOG PRODUCTS DC/DC: Multiphase Controllers DEVICE NCP5316 NCP5332A POWER MANAGEMENT SOLUTIONS ANALOG cont. GATE DRIVE External On-chip COMPLIANCE VRM 10 VRM 9.0 PACKAGE AVAILABILITY QFN-44 7*7 4Q02 SO-28W

ELM32430LA

Abstract: p45n02ldg
Contextual Info: 单 N 沟道 MOSFET ELM32430LA-S •概要 ■特点 ELM32430LA-S 是 N 沟道低输入电容，低工作电压， •Vds=25V 低导通电阻的大电流 MOSFET。 ·Id=45A ·Rds on < 28mΩ (Vgs=10V) ·Rds(on) < 30mΩ (Vgs=7V) ■绝对最大额定值 项目

Contextual Info: Single N-channel MOSFET ELM32430LA-S •General description ■Features ELM32430LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=25V Id=45A Rds(on) < 28mΩ (Vgs=10V) Rds(on) < 30mΩ (Vgs=7V)

XC2VP20

Abstract: XC2VP30 StratixEP1S25 XC2V1000 XC2V1500 XC2V2000 XC2V3000 XC2VP125 Virtex-II EP1S20
Contextual Info: White Paper The Truth About Die Size: Comparing Stratix & Virtex-II Pro FPGAs Introduction Historically, measuring available logic resources in devices from different FPGA vendors has been difficult, due to the lack of a standardized metric for measuring the programmable resources. While

P45N02LD

Contextual Info: Single N-channel MOSFET ELM32430LA-S •General description ■Features ELM32430LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=25V Id=45A Rds(on) < 28mΩ (Vgs=10V) Rds(on) < 30mΩ (Vgs=7V)

SKP10N60A

Abstract: 100w 5a IGBT Q67040-S4458 Q67040-S4459 SKP10N60 SKB10N60A SKW10N60A
Contextual Info: SKP10N60A, SKB10N60A SKW10N60A Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for:

P45N02LDG

Abstract: Niko Semiconductor p45n02ldg P45N02LD dpak code Niko Semiconductor P45N02 Field Effect Transistor SM-150 diode TO252
Contextual Info: P45N02LDG N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM TO-252 DPAK Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25 20mΩ 45A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

p45n02ldg

Contextual Info: シングル N チャンネル MOSFET ELM32430LA-S •概要 ■特長 ELM32430LA-S は低入力容量 低電圧駆動、 低 ・ Vds=25V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=45A ・ Rds on < 28mΩ (Vgs=10V) ・ Rds(on) < 30mΩ (Vgs=7V)

SEP0203

Abstract: SEMITRONICS CORP
Contextual Info: Semitronics Corp A Hi-Reliability Semiconductor Manufacturer Home Distributors home | help | email PNP Bi-Polar Power Transistors Employment Information Military Product TO-254 PACKAGE Products Quality Quote Request Value Added E-mail VCE sat max I C @ IB

Contextual Info: BF2030. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V Drain AGC HF Input G2 G1 R G1 HF Output + DC GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!