221F Search Results

2FBR04

Abstract: 2FB200 PWR220-2FA100R0F R050 PWR220 PWR220-2FA
Contextual Info: POWER RESISTORS January, 2008 Bourns Manufacturers Representatives Corporate Distributor Product Managers Americas Sales Team Asia Sales Team Europe Sales Team Bourns Internal Bourns Plant Managers PWR220F/221F, PWR220S/221S “How to Order” Resistance Code Format Change Notification

transistors c 2216

Abstract: UN2216 un2211 221Z 221D UN2213 221E UN2212 UN2214 UN2215
Contextual Info: Transistors with built-in Resistor / 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z Silicon NPN epitaxial planer transistor For digital circuits +0.25 0.65±0.15 0.65±0.15 1.45 0.95 3 +0.1 0.4 –0.05

221D

Abstract: 221L UNR2213 UNR2210 UNR2211 UNR2212 UNR2214 UNR2215 UNR2216 UNR2217
Contextual Info: Transistors with built-in Resistor / 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z / 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z Silicon NPN epitaxial planer transistor

221D

Abstract: UNR2210 UNR2211 UNR2212 UNR2213 UNR2214 UNR2215 UNR2216 UNR2217 UNR2218
Contextual Info: Transistors with built-in Resistor / 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z / 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z Silicon NPN epitaxial planer transistor

SK74LS151

Abstract: SK74154 IC-051 SF 369 SK74151 MULTIPLEXER IC THOMSON 58E ttl ic for multiplexer SK74150 SK74153
Contextual Info: THOMSON/ DISTRIBUTOR S flE T Q 5 t,S 73 D 000515a ITS • TCSK INTEGRATED CIRCUIT PINOUTS . SK 74150 1-ot-16 Data Selectors/Multiplexers S K 74153 SK 74LS153 Dual 4-Llne-fo-l-Llne Data Selector/Multiplexer Outline No. IC-051 Outline No. IC-049 {zìi iji (221fiTi (ipi rrsi n«i m rïëi näi

2FC12

Abstract: PWR220-2FA100R0F R050 PWR220-2FA27R00F PWR220-2FA3R30F PWR220-4SAR0400FE PWR221-2FBR100F PWR220S PWR221-2FB300R0F 2FB200
Contextual Info: POWER RESISTORS January, 2008 Bourns Manufacturers Representatives Corporate Distributor Product Managers Americas Sales Team Asia Sales Team Europe Sales Team Bourns Internal Bourns Plant Managers PWR220F/221F, PWR220S/221S “How to Order” Resistance Code Format Change Notification

2SA1302

Abstract: Toshiba 2Sa1302
Contextual Info: 2SA1302 SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm PO W ER AM PLIFIER APPLICATIONS. • • 20.5M AX. Complementary to 2SC3281 Recommend for 100W High Fidelity Audio Frequency Amplifier Output Stage. 03 .3 ± 0.2 3Í- M A X IM U M RATINGS Ta = 25‘,C SYMBOL

Contextual Info: TOSHIBA 2SK1486 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII .5 2 S K 1 486 INDUSTRIAL APPLICATIONS U nit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 20.5MAX.

gt50j

Contextual Info: TOSHIBA GT50J102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT G T 5 0 J 1 02 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • The 3rd. Generation. • Enhancement-Mode. • High Speed. 2 0.5 MAX. fi 3.3 ±0.2

2sa1943 toshiba transistor

Contextual Info: 2SA1943 T O S H IB A 2 S A 1 943 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 20.5MAX. • • ^3.3 ±0.2 Complementary to 2SC5200 Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage.

2SJ201

Abstract: 2SJ20
Contextual Info: TOSHIBA FIELD EFFECT TRANSISTOR 2SJ201 SILICON P CHANNEL MOS TYPE HIGH POWER AMPLIFIER APPLICATION Unit in mm 03.3 ±0.2 20.5MAX : Vd s s ^-ZOOV MIN. 16.01 . High Breakdown Voltage . High Forward Transfer Admittance : | Yfs | -5.OS (TYP.) : « o -H o O (D

2SA1301 TOSHIBA

Contextual Info: 2SA1301 SILICON PNP TRIPLE DIFFUSED TYPE U nit in mm PO W ER AM PLIFIER APPLICATIONS. • 2 0 .SM A X . . 0 3 . 3 ± 0 .2 Complementary to 2SC3280 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. í¡- M A X IM U M RATINGS Ta = 25°C

Contextual Info: T O SH IB A _ 2SK1544 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SIII-5 2 S K 1 5 4 4 INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS.

GT60M303

Contextual Info: TOSHIBA GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT60M303 HIGH PO W ER SWITCHING APPLICATIONS Unit in mm The 4th Generation FRD Included Between Emitter and Collector Enhancement-Mode High Speed IGBT : tf=0.25//s TYP.

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER 2SD2449 PO W ER AM PLIFIER APPLICATIONS Unit in mm 2 0.SM A X . • High Breakdown Voltage : V q e o = 160V (Min.) • Complementary to 2SB1594 ¿ 3 .3 ± 0 .2 pr y > M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

Toshiba transistor Ic 100A

Contextual Info: TOSHIBA TENTATIVE GT25Q301 TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR SILICON N CHANNEL IGBT GT25Q301 HIGH PO W E R SWITCHING APPLICATIONS U n it in mm M OTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode H ig h Speed : tf= 0.40^s M ax. Lo w Satu ratio n Voltage : V c e

tr 2sc5200

Abstract: power amplifier 2sc5200 2sa1943 TRANSISTOR TRANSISTOR 2SC5200 tr 2SA1943
Contextual Info: T O SH IB A 2SC5200 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SC5200 20.5MAX. • • Unit in mm ^3.3 ±0.2 Complementary to 2SA1943 Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta = 25°C

Contextual Info: GT40T101 HIGH POWER SWITCHING APPLICATIONS. U nit in mm 80.JMAX. • Enhancement-Mode • High Speed • Low Saturation : V c e sat = 5.0V (Max.) (Ic = 40A) h * J¡ : tf=0.4^is (Max.) (Iq = 40A) ¥ , = g j | . 1 1.5 , i r 7 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

transistor d 4515

Abstract: Transistor 4515 2-21F1C GT20D101
Contextual Info: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GT20D101 SILICON N CHANNEL TYPE HIGH POWER AMPLIFIER APPLICATION Unit in mm . High Breakdown Voltage ¿3.3 ¿0.2 20.5MAX : Vc e s =250V MIN. . High Forward Transfer Admittance : | Yfe | =10S (TYP.) . Complementary to GT20D201

B1181

Abstract: JIS B1181 TRANSISTOR b1181 2-16C1C B11-88 JIS b 2-21F1C ac238 AC654 AC652
Contextual Info: ACCESSORIES Some sem iconductors require accessories. Such accessories are listed below th e external drawings o f each sem iconductor standard. Usage o f such accessories is show n in th e follow ing figures. to be applied to 2-16C1C (to be appüed to 2-21F1B and 2-21F1C)

hf 224 capacitor

Contextual Info: 8 Bit Microcontroller TLCS-870/C Series TMP86C407MG TMP86C407MG The information contained herein is subject to change without notice. 021023 _ D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and

hf 224 capacitor

Contextual Info: 8 Bit Microcontroller TLCS-870/C Series TMP86C808DMG TMP86C808DMG The information contained herein is subject to change without notice. 021023 _ D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and

TMP86FS49AIUG

Abstract: toshiba rf semiconductor 2014
Contextual Info: 8 Bit Microcontroller TLCS-870/C Series TMP86FS49AIUG The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and

TMP86CM74AFG

Contextual Info: 8 Bit Microcontroller TLCS-870/C Series TMP86CM74AFG The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and