21L48 Search Results

ATPA

Abstract: 7130SA100P 24l01 7C263/4-35C 7164S15Y cy9122-25 7133SA35J 7142sa55 7130sa55p cy2149-45c
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2147-35C CY7C147-35C CY7C147-45C CY7C147-35C CY91L22-35C CY7C122-35C CY2147-45C CY2147-35C CY7C148-35C CY7C148-25C+ CY91L22-45C CY93L422AC CY2147-45C CY7C147-45C CY7C148-45C CY7C148-35C

81c78

Abstract: 7C291 5962-8515505RX 27PC256-12 PAL164A 8464C 5C6408 72018 39C10B MACH110 cross reference
Contextual Info: Product Line Cross Reference CYPRESS 2147-35C 2147-45C 2147-45C 2147-45M+ 2147-55C 2147-55M 2148-35C 2148-35C 2148-35M 2148-45C 2148-45C 2148-45M 2148-45M+ 2148-55C 2148-55C 2148-55M 2149-35C 2149-35C 2149-35M 2149-45C 2149-45M 2149-45M 2149-55C 2149-55C 2149-55M

Contextual Info: CY2148/21L48 CY2149/CY21L49 rV P P F Q C ; SEMICONDUCTOR F eatu res 1,024 x 4 Static R/W RAM F u n ction al D escrip tion A u to m a te d p o w e r-d o w n w h e n d e s e ­ le c te d 2 1 4 8 a n d w rite e n a b le ( W E ) in p u ts a r e b o th L O W , d a t a o n th e f o u r d a t a in p u t/o u tp u t

MSM 6290

Abstract: msm 5562 27c256 intel 62c512 AP 2068 27C512 microchip 62256 57C256 27C512 SGS-THOMSON 27C512-150
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 2147-35C 7C147-35C 27S03M 54S189M 7C170A-45M 7C170A-35M 2147-45C 2147-35C 27S07AC 7C190-25C 7C171A-35C 7C171A-25C 2147-45C 7C147-45C 27S07AM 7C190-25M 7C171A-45M 7C171A-35M+ 2147-45M+

intel 2114 static ram

Abstract: intel 2114 AN2148 2114 intel 2114L-3 91l24 2114A-4 a21l 2114AL-4 2114A-5
Contextual Info: - 4 K nMOS S t a t i c RAM ^1 0 2 4 x 4 n. ÌBJ&KB m % a « OC) TAAC max ns) TCAC max (ns) TOD max TOE TOH «in (ns) (ns) (ns) 10 100 TDH rain min TWR max V D D or V C C min win (ns) (ns) (ns) (ns) (ns) (V) 200 TWP TDS TWO 1 8 P I N I DD max (mA) 2114 A t) [*typ]

EPM5128LC

Abstract: IDT CYPRESS CROSS REFERENCE clocks epm5064lc-1 EPM5128LC-1 EPM5064LC EPM5128LC-2 EPM5128GI EPM5128JC-1 8464c 5962-8871309
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2148-35C 21L48-35C CY7C168A-35C CY7C168A-25C 5962-8871309XX 5962-89839112X CY2148-35C CY7C148-35C CY7C168A-45M CY7C168A-35M+ 5962-8871310RX 5962-8983913RX CY2148-35M CY7C148-35M CY7C169A-35C

CY2148-45PC

Abstract: CY2149-45PC CY2148-45DMB CY2149 CY21L48-45DC CY2148 CY2149-45DMB CY2149-45 CY21L49-55PC 214945
Contextual Info: CY2148/21L48 CY2149/CY21L49 ss s “ — y — - SEMICONDUCTOR Features Functional Description • Automated power-down when dese­ lected 2148 • CMOS for optimum speed/power • Low power — 660 mW (commercial) — 770 mW (military) • 5-volt power supply ± 10% tolerance

AM2149

Abstract: AM2148 AM2149-35 AM21L48-45 AM21L48-55 AM21L49-45 AM21L49-55 nmos static ram AM21L48-70 AM2148-55
Contextual Info: Am2148/Am2149 Am21 L48/Am21 L49 1024x4 Static RAM DISTINCTIVE CHARACTERISTICS • • • • High speed — access times as fast as 35 ns Fuily static storage and interface circuitry Autom atic power-down when deselected Am2148 TTL-compatible interface levels

IC 2148

Abstract: 21L49 CY2149 2148 static ram 21l48
Contextual Info: CY2148/21L48 CY2149/CY21L49 CYPRESS SEMICONDUCTOR 1,024 x 4 Static R/W RAM Functional Description Features Automated power-down when dese­ lected 2148 CMOS for optimum speed/power Low power — 660 mW (commercial) — 770 mW (military) 5-volt power supply ± 10% tolerance

cy3341

Abstract: 64K X 4 CACHE SRAM CY7C190 pasic380 cy7c189 palce22v10 programming guide palce16v8 programming algorithm STATIC RAM 6264 vhdl code for 8-bit parity checker 64x18 synchronous sram
Contextual Info: Product Selector Guide Static RAMs Organization/Density Density X1 X4 X4 SIO 7C147 2147 7C123 7C148 7C149 7C150 7C189 7C190 2148 2149 7C122 9122 93422 7C167A 7C168A 7C169A 7C170A 7C171A 7C172A 7C128A 7C187 7C164 7C166 7C161 7C162 7C185 6264 7C182 7C197 7C194

27HC642

Abstract: 39C10B PAL22V10APC CY2254SC-1 7132SA70 93L422AM 7024S15 7130SA25 7C198-45C 7006S
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 2147-35C 7C147-35C 27S03M 54S189M 7C170A-45M 7C170A-35M 2147-45C 2147-35C 27S07AC 7C190-25C 7C171A-35C 7C171A-25C 2147-45C 7C147-45C 27S07AM 7C190-25M 7C171A-45M 7C171A-35M+ 2147-45M+

AM2149

Abstract: IG 03210 AM2148 AM2148-35 AM2149-35 AM21L48-45 AM21L48-55 AM21L48-70 AM21L49-45 AM21L49-55
Contextual Info: Am2148/Am2149 L Am21 L48/Am21 L49 AdvS 1024x4 Static RAM Devices DISTINCTIVE CHARACTERISTICS • • • • • High speed — access tim es as fast as 35 ns Fully static storage and interface circuitry Autom atic power-down when deselected Am2148 TTL-compatible interface levels

EPM5128LC

Abstract: EPM5128GC epm5064lc-1 EPM5128LC1 59628867809r 5962-8984106LX EPM5128GI 7C19945DMB EPM5130GC-1 5962-8867812rx
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 5962-8753903LX 5962-8753902LX CY21L49-55C CY21L49-45C CY7C281 CY7C281A 5962-8863701LX 5962-8753902LX CY6116A-45C CY6116A-35C CY7C286 CY27H512 5962-8867003LX 5962-8867002LX CY6116A-55C CY6116A-45C

Contextual Info: ADV MICRO MEMORY 14E I QES7S2Ö 0G27SSM Am2148/Am2149 Am21 L48/Am21 L49 fi| Advanced Micro Devices 1024x4 Static RAM DISTINCTIVE CHARACTERISTICS • • • • High speed — access times as fast as 35 ns Fully static storage and interface circuitry Automatic power-down when deselected Am2148

Contextual Info: CY2148/21L48 CY2149/CY21L49 CYPRESS SEMICONDUCTOR 1,024 x 4 Static R/W RAM a n d w rite e n a b le W E in p u ts a re b o th LO W , d a ta o n th e f o u r d a ta in p u t/o u tp u t p in s ( I /O o th ro u g h I/O 3 ) is w ritte n in to th e m e m o ry lo c a tio n a d d re s s e d by th e a d d re s s

CY2149

Contextual Info: CY2148/21L48 CY2149/CY21L49 CYPRESS SEMICONDUCTOR F eatures 1,024 x 4 Static R/W RAM F unctional D escription Automated power-down when dese­ lected 2148 and w ntc enable (W E ) inputs are both LOW, da ta on the four da ta input/output pins (I/Oo through I / O 3 ) is w ritten into the