218GHZ Search Results

eudyna GaAs FET RF Transistor

Abstract: high frequency transistor ga as fet transistor on 4959 eudyna fet
Contextual Info: FHX45X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.55dB Typ. @f=12GHz High Associated Gain: 12.0dB (Typ.)@f=12GHz Lg ≤ 0.15µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain DESCRIPTION Gate The FHX45X is a Super High Electron Mobility Transistor

eudyna GaAs FET RF Transistor

Contextual Info: FHX13X, FHX14X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.45dB Typ. @f=12GHz (FHX13) High Associated Gain: 13.0dB (Typ.)@f=12GHz Lg ≤ 0.15µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX13X, FHX14X are Super High Electron Mobility Transistor

FHX04X

Abstract: FHX04 FHX05X FHX06X GaAs FET HEMT Chips hemt low noise die
Contextual Info: FHX04X, FHX05X, FHX06X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) High Associated Gain: 10.5dB (Typ.)@f=12GHz Lg ≤ 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX04X, FHX05X, FHX06X are High Electron Mobility

Contextual Info: FHX45X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.55dB Typ. @f=12GHz High Associated Gain: 12.0dB (Typ.)@f=12GHz Lg ≤ 0.15µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain DESCRIPTION Gate The FHX45X is a Super High Electron Mobility Transistor

Contextual Info: FHX35X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.2dB Typ. @f=12GHz High Associated Gain: 10.0dB (Typ.)@f=12GHz Lg ≤ 0.25µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain Gate Gate DESCRIPTION The FHX35X is a High Electron Mobility Transistor(HEMT) intended

fujitsu hemt

Contextual Info: FHX04LG/LP, 05LG/LP, 06LG/LP Super Low Noise HEMT FEATURES • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) • High Associated Gain: 10.5dB (Typ.)@f=12GHz • Lg ² 0.25µm, Wg = 200µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package

power amplifier 2-18GHZ

Contextual Info: CMM0015-BD RNP@š•@QXNP@gh¡@PNUw@mmic@a“–’Œ‰Œˆ˜ mŒ“ŒŸ@b˜•„‡…„”‡L@i”†N@QPWYU@r•†‘’ˆ @r‡NL@h•› š•”L@tˆŸ„™@WWPYY †•“

Contextual Info: MA4SW110 MA4SW210 MA4SW310 HMIC Silicon PIN Diode Switches RoHS Compliant Rev. V7 Features ♦ ♦ ♦ ♦ Broad Bandwidth Specified from 50 MHz to 20 GHz Usable from 50 MHz to 26.5 GHz Lower Insertion Loss and Higher Isolation than Comparable pHempt Designs

Contextual Info: 2.0-18.0 GHz 0.5W MMIC Amplifier CMM0015-BD August 2006 - Rev 02-Aug-06 ADVANCED PRODUCT SPECIFICATIONS * PRODUCT DESCRIPTION: 2-18GHz 0.5W MMIC Amplifier PRODUCT APPLICATION: PROJECT ENGINEER: Issam Khayo MASK NUMBER: M390 (engineering mask) VERSION NUMBER: 2

MASW110

Abstract: MA4 diode MA4SW210 MA4SW310 W110 ARM v7 MA4SW110
Contextual Info: MA4SW110 MA4SW210 MA4SW310 HMIC Silicon PIN Diode Switches RoHS Compliant Rev. V7 Features ♦ ♦ ♦ ♦ Broad Bandwidth Specified from 50 MHz to 20 GHz Usable from 50 MHz to 26.5 GHz Lower Insertion Loss and Higher Isolation than Comparable pHempt Designs

MASW-001100-1190

Abstract: MASW-001100-11900G MASW-002100-1191 MASW-002100-11910G MASW-003100-1192 MASW-003100-11920G DSAE001512
Contextual Info: MASW-001100-1190 MASW-002100-1191 MASW-003100-1192 HMIC Silicon PIN Diode Switches RoHs Compliant Rev. V6 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Broad Bandwidth Specified from 50MHz to 20GHz Usable from 50MHz to 26.5GHz Lower Insertion Loss / Higher Isolation

Contextual Info: MA4SW110 MA4SW210 MA4SW310 HMIC Silicon PIN Diode Switches RoHS Compliant V8 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Broad Bandwidth Specified from 50 MHz to 20 GHz Usable from 50 MHz to 26.5 GHz Lower Insertion Loss and Higher Isolation than Comparable pHEMT/Discrete Component Designs

FHX13LP

Abstract: FHX14LP transistor fhx 35 lp FHX13LG FHX13 fujitsu hemt FHX14LG Z150 low noise hemt transistor low noise hemt
Contextual Info: FHX13LG/LP, 14LG/LP Super Low Noise HEMT FEATURES • Low Noise Figure: 0.45dB Typ. @f=12GHz (FHX13) • High Associated Gain: 13.0dB (Typ.)@f=12GHz • Lg s 0.15|iim, Wg = 200|iim • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package

FHX04

Abstract: FHX04X FHX05X FHX06X GaAs FET HEMT Chips hemt low noise die
Contextual Info: FHX04X, FHX05X, FHX06X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) High Associated Gain: 10.5dB (Typ.)@f=12GHz Lg ≤ 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX04X, FHX05X, FHX06X are High Electron Mobility

FHX04

Abstract: FHX04X FHX05X FHX06X hemt low noise die
Contextual Info: FHX04X, FHX05X, FHX06X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) High Associated Gain: 10.5dB (Typ.)@f=12GHz Lg ² 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX04X, FHX05X, FHX06X are High Electron Mobility

00709

Abstract: MA4SW210 MADR-007097-000100 MA4SW110 MADR-009190-000
Contextual Info: MA4SW110 MA4SW210 MA4SW310 HMIC Silicon PIN Diode Switches RoHS Compliant V8 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Broad Bandwidth Specified from 50 MHz to 20 GHz Usable from 50 MHz to 26.5 GHz Lower Insertion Loss and Higher Isolation than Comparable pHEMT/Discrete Component Designs

CHA3218-99F

Contextual Info: CHA3218-99F RoHS COMPLIANT 2-18GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA3218-99F is a two stage very wide band Low Noise Amplifier. The wide frequency band associated to a 2dB low noise figure makes this circuit very versatile for very high performance systems.

power amplifier 2-18GHZ

Abstract: LMA183 DC TO 18GHZ RF AMPLIFIER MMIC Ablebond
Contextual Info: 2-18 GHz MESFET Amplifier Filtronic LMA183 Solid State Features • • • • • • • • • • 5.5dB Typical Noise Figure 7.5dB Typical Gain 15dBm Saturated Output Power 12dB Input/Output Return Loss Typical 2-18GHz Frequency Bandwidth +4 Volts Dual Bias Supply

power amplifier 2-18GHZ

Abstract: 2-18ghz 2-18G
Contextual Info: CHA1074 2-18GHz Amplifier GaAs Monolithic Microwave IC Description This broadband GaAs Monolithic Microwave Integrated Circuit has been designed for use in gain stage applications where broadband high frequency performances with excellent gain, power and noise

u 233 7011

Abstract: HA2001
Contextual Info: MMICs INDEX POWER AM PLIFIERS ♦ CHA1027 - 4 .5 -6.0G H z POWER AMPLIFIER. 133 NEW ♦C H A 5 0 0 5 - 4.5 - 6.5GHz POWER DRIVER AMPLIFIER. 139 NEW ♦C H A 6 0 0 9 - 5.0 - 6.0GHz POWER

hemt low noise die

Contextual Info: FHX04X, FHX05X, FHX06X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) High Associated Gain: 10.5dB (Typ.)@f=12GHz Lg ² 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX04X, FHX05X, FHX06X are High Electron Mobility

Contextual Info: MA4SW110 MA4SW210 MA4SW310 HMIC Silicon PIN Diode Switches RoHS Compliant M/A-COM Products Rev. V6 Features ♦ ♦ ♦ ♦ Broad Bandwidth Specified from 50MHz to 20GHz Usable from 50MHz to 26.5GHz Lower Insertion Loss and Higher Isolation than Comparable pHempt Designs

hartley oscillator

Abstract: The Modern Armstrong Regenerative Receiver 1GHz vco AR5111 max2115 history of varactor diode modern and radar transmitters 226 varactor hartley sa2400
Contextual Info: SIGNAL GENERATION CIRCUITS WIRELESS, RF, AND CABLE Application Note 1768: Oct 21, 2002 Tracking Advances In VCO Technology Tracks the history of voltage-controlled oscillators VCOs since approximately 1910. Provides examples of VCO integration in RF ICs. Presents technology, performance

Contextual Info: SLNA-180-33-30-SMA DATA SHEET 3 dB NF, 2 GHz to 18 GHz, Low Noise Broadband Amplifier with 33 dB Gain and SMA SLNA-180-33-30-SMA is a Broadband High Gain GaAs PHEMT MMIC-based coaxial Low Noise Amplifier, operating in the 2 to 18 GHz frequency range. The amplifier