MA4SW310 Search Results

Contextual Info: MA4SW110 MA4SW210 MA4SW310 HMIC Silicon PIN Diode Switches RoHS Compliant Rev. V7 Features ♦ ♦ ♦ ♦ Broad Bandwidth Specified from 50 MHz to 20 GHz Usable from 50 MHz to 26.5 GHz Lower Insertion Loss and Higher Isolation than Comparable pHempt Designs

Contextual Info: MA4SW210B-1 MA4SW310B-1 HMIC Silicon PIN Diode Switches with Integrated Bias Network MA4SW210B-1 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Rev. V4 RoHS Compliant Broad Bandwidth Specified 2 to 18 GHz Usable up to 26 GHz Integrated Bias Network Low Insertion Loss / High Isolation

MASW110

Abstract: MA4 diode MA4SW210 MA4SW310 W110 ARM v7 MA4SW110
Contextual Info: MA4SW110 MA4SW210 MA4SW310 HMIC Silicon PIN Diode Switches RoHS Compliant Rev. V7 Features ♦ ♦ ♦ ♦ Broad Bandwidth Specified from 50 MHz to 20 GHz Usable from 50 MHz to 26.5 GHz Lower Insertion Loss and Higher Isolation than Comparable pHempt Designs

Contextual Info: MA4SW110 MA4SW210 MA4SW310 HMIC Silicon PIN Diode Switches RoHS Compliant V8 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Broad Bandwidth Specified from 50 MHz to 20 GHz Usable from 50 MHz to 26.5 GHz Lower Insertion Loss and Higher Isolation than Comparable pHEMT/Discrete Component Designs

00709

Abstract: MA4SW210 MADR-007097-000100 MA4SW110 MADR-009190-000
Contextual Info: MA4SW110 MA4SW210 MA4SW310 HMIC Silicon PIN Diode Switches RoHS Compliant V8 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Broad Bandwidth Specified from 50 MHz to 20 GHz Usable from 50 MHz to 26.5 GHz Lower Insertion Loss and Higher Isolation than Comparable pHEMT/Discrete Component Designs

Contextual Info: MA4SW110 MA4SW210 MA4SW310 HMIC Silicon PIN Diode Switches RoHS Compliant M/A-COM Products Rev. V6 Features ♦ ♦ ♦ ♦ Broad Bandwidth Specified from 50MHz to 20GHz Usable from 50MHz to 26.5GHz Lower Insertion Loss and Higher Isolation than Comparable pHempt Designs

MA4SW210B-1

Abstract: MA4SW310B-1 210B1 SN62 PB36 ag2 solder preform 310b SN62 PB36 ag2 MA4SW 310B
Contextual Info: Monolithic Pin Diode Switches with Integrated Bias Network MA4SW210B-1, MA4SW310B-1 V3.00 Features Chip Layout • • • • • MA4SW210B-1 Broad Bandwith Specified up to 18 GHz Usable up to 26 GHz Integrated Bias Network Low Insertion Loss / High Isolation

Contextual Info: MA4SW210B-1 MA4SW310B-1 HMIC Silicon PIN Diode Switches with Integrated Bias Network Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Rev. V4 MA4SW210B-1 Broad Bandwidth Specified 2 to 18 GHz Usable up to 26 GHz Integrated Bias Network Low Insertion Loss / High Isolation

MA4SW110

Contextual Info: MA4SW110, MA4SW210, MA4SW310 M/A-COM Monolithic PIN Diode Switches A IÂ C G M M R F & Microwave Products Features • • • Borad Bandwidth • Specified up to 20 GHz • Usable to 26.5 GHz Low Insertion Loss / High Isolation Rugged, Fully Monolithic, Glass Encapsulated

Contextual Info: MA4SW110 MA4SW210 MA4SW310 Broadband Monolithic Silicon PIN Diode Switches Rev 5.0 Features MA4SW110 SPST • Broad Bandwidth • Specified up to 20 GHz • Usable to 26.5 GHz • Low Insertion Loss / High Isolation • Rugged, Fully Monolithic, Glass Encapsulated

MA4SW110

Abstract: sp3t spt31 PIN Beam lead diod
Contextual Info: M an A M P com pany Monolithic PIN Diode Switches MA4SW110, MA4SW210, MA4SW310 V2.00 Features • Broad Bandw idth - S p eciied up to 20 GH z MA4SW110 J1 J2 - 0 0— W - Usable to 26 5 G H z • Low Insertion Loss/H igh Isolation • R ugged, Fu lly M onolithic, G lass En cap s u it e d

MA4SW210B-1

Abstract: MA4SW310B-1 MA4SW210 SN62 PB36 ag2 210B1 MA4SW
Contextual Info: MA4SW210B-1 MA4SW310B-1 HMIC Silicon PIN Diode Switches with Integrated Bias Network RoHS Compliant MA4SW210B-1 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Rev. V4 Broad Bandwidth Specified 2 to 18 GHz Usable up to 26 GHz Integrated Bias Network Low Insertion Loss / High Isolation

MA4SW310B-1

Abstract: MA4SW210B-1 MA4SW
Contextual Info: MA4SW210B-1 MA4SW310B-1 HMIC Silicon PIN Diode Switches with Integrated Bias Network Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Rev. V4 MA4SW210B-1 Broad Bandwidth Specified 2 to 18 GHz Usable up to 26 GHz Integrated Bias Network Low Insertion Loss / High Isolation

smr-3822

Abstract: x-band power transistor 50W SMR-5550 x-band mmic lna HF multicoupler GAAS FET AMPLIFIER x-band 10w x-band microwave fet SM4T mixer PALLET FM AMPLIFIER 300 WATTS x-band limiter
Contextual Info: final covers_2008.qxd 5/8/08 3:20 PM Page 1 We work with you The M/A-COM brand of radio frequency RF and microwave components is one of the broadest lines of reliable components for the wireless telecom, automotive, aerospace and military industries. From semiconductors to components, to subsystems and small systems, there are many new M/A-COM

MAAM-008863

Abstract: MAMU-009156 transistor MY52 200W MOSFET POWER AMP transistor MY51 GPS Antenna AT65 MA4ST350 MADR-007690-DR0002 a74 sot-89 SM4T mixer
Contextual Info: Corporate Headquarters Richardson Electronics 40W267 Keslinger Road P.O. Box 393 LaFox, IL USA 60147-0393 Phone: 1 800 737-6937 630-208-3637 Fax: (630) 208-2550 Internet: www.rell.com Email: Canada Brampton, Ontario Torod, Norway 1 (800) 737-6937 Latin America