2149 STATIC RAM Search Results

2149 RAM

Abstract: 18-PIN 21493 2149 static ram
Contextual Info: MOS LSI T M S 2149 JL, AIL, FPL FAST 1024-W 0R D BY 4 -B IT STATIC RAM ^ _JANUARY 1982 - REVISED MAY 1982 TM S 2149 18-PIN PLASTIC A N D C E RA M IC D U A L -IN -L IN E PACKAGES 1024 X 4 Organization • TOP VIEW S in gle+5 V Supply (±10% Tolerance)

2148 ram

Abstract: nmos static ram 2149 static ram
Contextual Info: Am2148/2149 1024 x 4 Static RAM High speed — access times as fast as 35 ns Fully static storage and interface circuitry Automatic power-down when deselected Am2148 TTL-compatible interface levels • • Low power dissipation - Am2148: 990 mW active, 165 mW power down

Static ram 2149

Abstract: 2149 STATIC RAM
Contextual Info: MOS LSI TMS 2149 JL, NL, FPL FAST 1024-W0RD BY 4-BIT STATIC RAM J A N U A R Y 1982 - R E V IS E D M A Y 1 98 2 TM S 2149 18-PIN PLASTIC A N D C E RA M IC D U A L -IN -L IN E PACKAGES 1024 X 4 Organization TOP VIEW Q U l8 3 V CC A2 Q 2 17 A8 16 A4 AlC 3

cy3341

Abstract: 64K X 4 CACHE SRAM CY7C190 pasic380 cy7c189 palce22v10 programming guide palce16v8 programming algorithm STATIC RAM 6264 vhdl code for 8-bit parity checker 64x18 synchronous sram
Contextual Info: Product Selector Guide Static RAMs Organization/Density Density X1 X4 X4 SIO 7C147 2147 7C123 7C148 7C149 7C150 7C189 7C190 2148 2149 7C122 9122 93422 7C167A 7C168A 7C169A 7C170A 7C171A 7C172A 7C128A 7C187 7C164 7C166 7C161 7C162 7C185 6264 7C182 7C197 7C194

Triton P54C

Abstract: cy7c37128 62128 SRAM adapter 48-pin TSOP CY7C37192 CYM74P436 CY3501A CY7C37512 MIB 30 Product Selector Guide
Contextual Info: Product Selector Guide Fast Static RAMs Organization/Density Density X1 X4 X4 SIO X8 4K 7C147 2147 7C123 7C148 7C149 7C150 2148 2149 7C122 9122 93422 16K 7C167A 7C168A 7C128A 6116 64K to 72K 7C187 7C164 7C166 7C185 6264 7C182 256K to 288K 7C197 7C194 7C195

IC 2148

Abstract: 21L49 CY2149 2148 static ram 21l48
Contextual Info: CY2148/CY21L48 CY2149/CY21L49 CYPRESS SEMICONDUCTOR 1,024 x 4 Static R/W RAM Functional Description Features Automated power-down when dese­ lected 2148 CMOS for optimum speed/power Low power — 660 mW (commercial) — 770 mW (military) 5-volt power supply ± 10% tolerance

AM2149

Abstract: IG 03210 AM2148 AM2148-35 AM2149-35 AM21L48-45 AM21L48-55 AM21L48-70 AM21L49-45 AM21L49-55
Contextual Info: Am2148/Am2149 L Am21 L48/Am21 L49 AdvS 1024x4 Static RAM Devices DISTINCTIVE CHARACTERISTICS • • • • • High speed — access tim es as fast as 35 ns Fully static storage and interface circuitry Autom atic power-down when deselected Am2148 TTL-compatible interface levels

AM2149

Abstract: AM2148 AM2149-35 AM21L48-45 AM21L48-55 AM21L49-45 AM21L49-55 nmos static ram AM21L48-70 AM2148-55
Contextual Info: Am2148/Am2149 Am21 L48/Am21 L49 1024x4 Static RAM DISTINCTIVE CHARACTERISTICS • • • • High speed — access times as fast as 35 ns Fuily static storage and interface circuitry Autom atic power-down when deselected Am2148 TTL-compatible interface levels

H8S/2169

Abstract: Hitachi DSAUTAZ006 2149 RAM
Contextual Info: Section 1 Overview 1.1 Overview The H8S/2149 and H8S/2169 F-ZTAT is a microcomputer MCU built around the H8S/2000 CPU, employing Hitachi’s proprietary architecture, and equipped with on-chip supporting functions required for system configuration. The H8S/2000 CPU has an internal 32-bit architecture, is provided with sixteen 16-bit general

CY2148-45PC

Abstract: CY2149-45PC CY2148-45DMB CY2149 CY21L48-45DC CY2148 CY2149-45DMB CY2149-45 CY21L49-55PC 214945
Contextual Info: CY2148/CY21L48 CY2149/CY21L49 ss s “ — y — - SEMICONDUCTOR Features Functional Description • Automated power-down when dese­ lected 2148 • CMOS for optimum speed/power • Low power — 660 mW (commercial) — 770 mW (military) • 5-volt power supply ± 10% tolerance

CY2149

Contextual Info: CY2148/CY21L48 CY2149/CY21L49 CYPRESS SEMICONDUCTOR F eatures 1,024 x 4 Static R/W RAM F unctional D escription Automated power-down when dese­ lected 2148 and w ntc enable (W E ) inputs are both LOW, da ta on the four da ta input/output pins (I/Oo through I / O 3 ) is w ritten into the

lt 7216

Contextual Info: 7 /8 " Diameter 10-Turn W i rewound Precision Potentiometer/ Position Sensor FEATURES I 7216, 7221 Bushing Mount, Sleeve Bearing 7223 Servo Mount, Ball Bearing ELECTRICAL Resistance Range, Ohms 10 to 125K Standard Resistance Tolerance ±3% Minimum Practical Resistance Tolerance

2148 static ram

Contextual Info: Am2148/Am2149 Am21 L48/Am21 L49 L Adv mS 1024x4 Static RAM Devices DISTINCTIVE CHARACTERISTICS • • • • Low power dissipation - Am2148: 990 mW active, 165 mW power down - Am21L48: 688 mW active, 110 mW power down High output drive - Up to seven standard TTL loads

Contextual Info: CY2148/CY21L48 CY2149/CY21L49 rV P P F Q C ; SEMICONDUCTOR F eatu res 1,024 x 4 Static R/W RAM F u n ction al D escrip tion A u to m a te d p o w e r-d o w n w h e n d e s e ­ le c te d 2 1 4 8 a n d w rite e n a b le ( W E ) in p u ts a r e b o th L O W , d a t a o n th e f o u r d a t a in p u t/o u tp u t

LT 7223

Abstract: lt 7216
Contextual Info: MODEL SERIES 7 2 0 0 7 /8 " Diameter 10-Turn W irewound Precision Potentiometer/ Position Sensor I 721 6,7 2 2 1 pushing M ount, Sleeve Rearing 7223 Servo M ount, pall Rearing ELECTRICAL Resistance Range, Ohms 10 to 125K Standard Resistance Tolerance ±3%

231369

Abstract: 2148H 2149H 2149H-1 2149H-2 2149H-3 2149HL
Contextual Info: 2149H 1024 x 4-BIT STATIC RAM Max. Address Access Time ns Max. Chip Select Access Time (ns) 2149H-1 2149H-2 2149H-3 2149H 2149HL 35 45 55 70 70 20 25 30 30 150 150 125 20 150 150 Max. Active Current (mA) Common Data input and Output Improved Performance Margins

2149H-3

Abstract: 2148H
Contextual Info: 2149H 1024 x 4-BIT STATIC RAM 2149H 2149HL 55 70 70 25 30 30 150 150 125 2149H-1 2149H-2 2149H-3 Max. Address Access Time ns 35 45 Max. Chip Select Access Time (ns) 20 20 Max. Active Current (mA) 150 150 Improved Performance Margins Common Data Input and Output

Contextual Info: CY7C18S CYPRESS 8K x 8 Static RAM Features Functional D escription • High speed — 15 ns The CY7C185 is a high-performance CMOS static RAM organized as 8192 words by 8 bits. Easy memory expansion is provided by an active LOW chip enable CEi , an active HIGH chip enable (CE2),

Contextual Info: CY7C164A CY7C166A 16,384 x 4 Static R/W RAM CYPRESS SEMICONDUCTOR Features • Automatic power-down when deselected • Output Enable OE feature (7C166A) • CMOS for optimum speed/power • High speed - 15 ns t*A • Low active power - 550 mW • Low standby power

via vt8235 user manual

Abstract: keyboard and touchpad schematic via vt8235 K8T800 vt8235 AMD athlon socket 754 schematic diagram lcd tv tuner box ddr ram repair via vt8235 manual hard disk ATA pcb schematic
Contextual Info: Preface Notebook Computer D470K Service Manual Preface I Preface Notice The company reserves the right to revise this publication or to change its contents without notice. Information contained herein is for reference only and does not constitute a commitment on the part of the manufacturer or any subsequent vendor. They assume no responsibility or liability for any errors or inaccuracies that may appear in this publication nor are

S-22S12I

Abstract: S-22S12R X2212 seiko s22s
Contextual Info: S-22S12R/I 256-word x4-bit parallel NON-VOLATILE RAM The S-22S12R/I is a non-volatile CMOS RAM, com posed of a CMOS static RAM and a non-volatile electrically erasable programmable memory E2PROM to backup the SRAM. The organization is 256-word x 4-bit (total 1024 bits) and

C104A

Abstract: C104A-0
Contextual Info: CY7C164A CY7C166A CYPRESS SEMICONDUCTOR Features 16,384 x 4 Static R/W RAM Functional D escription I/0 3 is written into the memory location specified on the address pins Ao through Au). Reading the device is accomplished by taking chip enable (CE) LOW (and OE LOW for

Contextual Info: CY7C185 ^ CYPRESS 8K x 8 Static RAM F e a tu re s F u n c tio n a l D escrip tio n • High speed — 15 ns The CY7C185 is a high-performance CM OS static RAM organized as 8192 words by 8 bits. Easy memory expansion is provided by an active LO W chip enable

MBM2149-55L

Abstract: MBM2149-70L 48CK MBM2149 MBM2149-45
Contextual Info: F U JIT SU m ic ro e le c tro n ic s MOS 4096-BIT STATIC RANDOM ACCESS MEMORY MBM2149-45 MBM2149-55L MBM2149-70L DESCRIPTION The Fujitsu MBM2149 is a 1024 word by 4-bit static random ac­ cess memory fabricated using N-channel silicon gate MOS tech­ nology. The memory is fully static