20TCK Search Results
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Maxim Integrated Products DS18B20-TCKJHIGH PRECISION 1-WIRE TEMPERTURE |
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DS18B20-TCKJ | Reel |
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20TCK Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: 256M GDDR3 SDRAM K4J55323QG 256Mbit GDDR3 SDRAM Revision 1.2 March 2006 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, |
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K4J55323QG 256Mbit | |
timing controller SHART
Abstract: T21N K4U52324Q SAMSUNG GDDR4 K4U52324QE-BC09 GDDR4
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K4U52324QE 512Mbit 32Bit 136Ball timing controller SHART T21N K4U52324Q SAMSUNG GDDR4 K4U52324QE-BC09 GDDR4 | |
K4D263238G-VC33Contextual Info: 128M GDDR SDRAM K4D263238G-GC 128Mbit GDDR SDRAM 1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 1.7 February 2005 Samsung Electronics reserves the right to change products or specification without notice. |
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K4D263238G-GC 128Mbit 32Bit 144-Ball 200MHz/ 166MHz K4D263238G-VC2A K4D263238G-VC33. K4D263238G-VC33 | |
M88E1111
Abstract: xcf32pv048 u3843 M88E1111 datasheet vga codec fb0805 SYSTEMACE TQFP144 XCF32P-V048 7a176 DIP41
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100MHz 150mA XC95144XL 047UF M88E1111 xcf32pv048 u3843 M88E1111 datasheet vga codec fb0805 SYSTEMACE TQFP144 XCF32P-V048 7a176 DIP41 | |
M88E1111
Abstract: fb0805 DIP41 M88E1111 datasheet xcf32pv048 365R XTAL-SMD m21 sot23 transistor transistor C458 C4751
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100MHz XC95144XL MAX6664, MAX6663 BSS138N ML405 M88E1111 fb0805 DIP41 M88E1111 datasheet xcf32pv048 365R XTAL-SMD m21 sot23 transistor transistor C458 C4751 | |
K4D263238G-VC33
Abstract: K4D263238G-VC2A K4D263238G-GC33 K4D26323 K4D263238g K4D263238G-GC K4D263238G-GC2A K4D263238G-GC36 K4D263238GVC33 k4d263238gvc2a
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K4D263238G-GC 128Mbit 144-Ball K4D263238G-VC33 K4D263238G-VC2A K4D263238G-GC33 K4D26323 K4D263238g K4D263238G-GC K4D263238G-GC2A K4D263238G-GC36 K4D263238GVC33 k4d263238gvc2a | |
Contextual Info: 128M GDDR SDRAM K4D263238G-GC 128Mbit GDDR SDRAM 1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 1.0 July 2004 Samsung Electronics reserves the right to change products or specification without notice. |
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K4D263238G-GC 128Mbit 32Bit 144-Ball K4D26323QG-GC40/45 20tCK) K4D263238G-GC2A | |
k4j52324ki-hc1a
Abstract: K4J52324KI-HC08 K4J52324K K4J52324KI-HC14
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K4J52324KI 512Mb 10MAX k4j52324ki-hc1a K4J52324KI-HC08 K4J52324K K4J52324KI-HC14 | |
DDR2 x32Contextual Info: 512M GDDR3 SDRAM K4J52324QC-B 512Mbit GDDR3 SDRAM Revision 1.2 September 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, |
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K4J52324QC-B 512Mbit DDR2 x32 | |
136ballContextual Info: 256M GDDR3 SDRAM K4J55323QG-BC 256Mbit GDDR3 SDRAM Revision 1.0 June 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, |
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K4J55323QG-BC 256Mbit 136ball | |
Contextual Info: 512M GDDR3 SDRAM K4J52324QC-B 512Mbit GDDR3 SDRAM Revision 1.4 March 2006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, |
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K4J52324QC-B 512Mbit | |
K4J52324QcContextual Info: 512M GDDR3 SDRAM K4J52324QC 512Mbit GDDR3 SDRAM Revision 1.5 June 2006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, |
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K4J52324QC 512Mbit K4J52324Qc | |
K4D26323RA-GC33
Abstract: GC33 K4D26323AA-GL K4D26323RA-GC K4D26323RA-GC2A K4D26323RA-GC36
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K4D26323RA-GC 128Mbit 32Bit 144-Ball K4D26323RA-GC2A 20tCK 15tCK 22tCK K4D26323RA-GC33 GC33 K4D26323AA-GL K4D26323RA-GC K4D26323RA-GC36 | |
DDR RAM 512M
Abstract: K4J52324QC-BC14 Hynix Cross Reference hynix memory h9 ddr2 K4J52324Q K4J52324QC-BJ12 mark t5n gddr3 K4J52324QC-BC20 K4J52324QC-A
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K4J52324QC-B 512Mbit DDR RAM 512M K4J52324QC-BC14 Hynix Cross Reference hynix memory h9 ddr2 K4J52324Q K4J52324QC-BJ12 mark t5n gddr3 K4J52324QC-BC20 K4J52324QC-A | |
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HY5RS573225B
Abstract: BA1 K11
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HY5RS573225BFP 8Mx32) HY5RS573225BFP 550MHz 500MHz HY5RS573225B BA1 K11 | |
Cj721
Abstract: transistor j3003 J3009 j3003 J3005 JS28F256P30T85 11M24 FERRITE-220 J3007 A1818
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FF665 FF665 H-2X19 J3012 J3006 Cj721 transistor j3003 J3009 j3003 J3005 JS28F256P30T85 11M24 FERRITE-220 J3007 A1818 | |
Contextual Info: 128M GDDR SDRAM K4D263238G-GC 128Mbit GDDR SDRAM 1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 1.1 August 2004 Samsung Electronics reserves the right to change products or specification without notice. |
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K4D263238G-GC 128Mbit 32Bit 144-Ball K4D26323QG-GC40/45 20tCK) | |
K4j52324qh-hj1a
Abstract: K4J52324QH-HJ08 K4J52324QH K4J52324QH-HC12 K4J52324Q
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K4J52324QH 512Mbit 136FBGA 10MAX K4j52324qh-hj1a K4J52324QH-HJ08 K4J52324QH K4J52324QH-HC12 K4J52324Q | |
Contextual Info: * VDD / VDDQ=2.8V * K4D26323RA-GC 128M DDR SDRAM 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 1.9 August 2002 Samsung Electronics reserves the right to change products or specification without notice. |
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K4D26323RA-GC 128Mbit 32Bit 144-Ball K4D26323RA-GC2A 20tCK 15tCK 22tCK | |
K4J52324QE-BJ1A
Abstract: K4J52324QE-BC14
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K4J52324QE 512Mbit K4J52324QE-BJ1A K4J52324QE-BC14 | |
K4J55323QI
Abstract: K4J55323QI-BC14 K4J55323QI-BC12 K4J55323
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K4J55323QI 256Mbit K4J55323QI K4J55323QI-BC14 K4J55323QI-BC12 K4J55323 | |
SAMSUNG GDDR4
Abstract: K4U52324QE GDDR4 twido K4U52324QE-BC09 HYNIX charge pump T21N 136ball K4U52324QE-BC07 k4u52324qe-bc08
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K4U52324QE 512Mbit 32Bit 136Ball SAMSUNG GDDR4 K4U52324QE GDDR4 twido K4U52324QE-BC09 HYNIX charge pump T21N K4U52324QE-BC07 k4u52324qe-bc08 | |
FERRITE-220
Abstract: transistor j3003 ff1136 J3009 j3003 HDR1X12 capacitor 100nf 16v N5 JS28F256P30T85 11n34 E28 ferrite
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FF1136 HDR-1X12 HDR-1X34 FF1136 H-2X19 J3012 J3006 FERRITE-220 transistor j3003 J3009 j3003 HDR1X12 capacitor 100nf 16v N5 JS28F256P30T85 11n34 E28 ferrite | |
Contextual Info: 256M GDDR3 SDRAM K4J55323QI 256Mbit GDDR3 SDRAM Revision 1.0 January 2007 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, |
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K4J55323QI 256Mbit |