20N160 Search Results

Contextual Info: Capacitive Sensors CFBM 20N1600 Capacitive Sensors dimension drawing 80 ø 20 Pot LED general data photo mounting type shielded nominal sensing distance Sn 10 mm nominal sensing distance Sn adjustable 2 . 10 mm temperature drift ± 15 % +10 . +70 °C

Contextual Info: Capacitive proximity sensors CFBM 20N1600 Capacitive proximity sensors dimension drawing 80 ø 20 Pot LED general data photo mounting type shielded nominal sensing distance Sn 10 mm nominal sensing distance Sn adjustable 2 . 10 mm temperature drift ± 15 % +10 . +70 °C

20N160

Abstract: crt flyback
Contextual Info: High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH 20N140 IXBH 20N160 VCES IC25 VCE sat tfi N-Channel, Enhancement Mode C = = = = 1400/1600 V 20 A 4.7 V typ. 40 ns TO-247 AD G G C E C (TAB) E G = Gate, E = Emitter, Symbol Conditions Maximum Ratings

Contextual Info: n ix Y S Advanced Technical Information High Voltage BIMOSFET Monolithic Bipolar MOS Transistor V CES IXBH 20N140 IXBH 20N160 ^C25 V CE sat N -C hannel, E n hance m en t M ode tfi 1400/1600 V 20 A 5.4 V typ. 35 ns TO-247 AD Symbol Conditions Maximum Ratings

Contextual Info: Capacitive proximity sensors CFBM 20N1600 Capacitive proximity sensors dimension drawing 80 ø 20 Pot LED general data photo mounting type shielded nominal sensing distance Sn 10 mm nominal sensing distance Sn adjustable 2 . 10 mm temperature drift ± 15 % +10 . +70 °C

Capacitive proximity Sensors

Contextual Info: Capacitive proximity sensors CFBM 20N1600 Capacitive proximity sensors dimension drawing 80 ø 20 Pot LED general data photo mounting type shielded nominal sensing distance Sn 10 mm nominal sensing distance Sn adjustable 2 . 10 mm temperature drift ± 15 % +10 . +70 °C

Contextual Info: Capacitive proximity sensors CFBM 20N1600 Capacitive proximity sensors dimension drawing 80 ø 20 Pot LED general data photo mounting type shielded nominal sensing distance Sn 10 mm nominal sensing distance Sn adjustable 2 . 10 mm temperature drift ± 15 % +10 . +70 °C

Contextual Info: Capacitive proximity sensors CFBM 20N1600 Capacitive proximity sensors dimension drawing 80 ø 20 Pot LED general data photo mounting type shielded nominal sensing distance Sn 10 mm nominal sensing distance Sn adjustable 2 . 10 mm temperature drift ± 15 % +10 . +70 °C

20N1600

Contextual Info: Capacitive proximity sensors CFBM 20N1600 Capacitive proximity sensors dimension drawing 80 ø 20 Pot LED general data photo mounting type shielded nominal sensing distance Sn 10 mm nominal sensing distance Sn adjustable 2 . 10 mm temperature drift ± 15% +10 . +70 °C

Contextual Info: Capacitive proximity sensors CFBM 20N1600 Capacitive proximity sensors dimension drawing 80 ø 20 Pot LED general data photo mounting type shielded nominal sensing distance Sn 10 mm nominal sensing distance Sn adjustable 2 . 10 mm temperature drift ± 15 % +10 . +70 °C

Contextual Info: Capacitive proximity sensors CFBM 20N1600 Capacitive proximity sensors dimension drawing 79,5 ø 20 Pot LED general data photo nominal sensing distance Sn 10 mm nominal sensing distance Sn adjustable 2 . 10 mm mounting type flush GND electrode yes temperature drift

Contextual Info: Capacitive proximity sensors CFBM 20N1600 Capacitive proximity sensors dimension drawing 80 ø 20 Pot LED general data photo mounting type shielded nominal sensing distance Sn 10 mm nominal sensing distance Sn adjustable 2 . 10 mm temperature drift ± 15% +10 . +70 °C

Contextual Info: Capacitive proximity sensors CFBM 20N1600 Capacitive proximity sensors dimension drawing 79,5 ø 20 Pot LED general data photo nominal sensing distance Sn 10 mm nominal sensing distance Sn adjustable 2 . 10 mm mounting type shielded GND electrode yes temperature drift

20N160

Abstract: 20N140
Contextual Info: High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH 20N140 IXBH 20N160 VCES IC25 VCE sat tfi N-Channel, Enhancement Mode C = = = = 1400/1600 V 20 A 4.7 V typ. 40 ns TO-247 AD G G C E C (TAB) E G = Gate, E = Emitter, Symbol Conditions Maximum Ratings

Contextual Info: Capacitive proximity sensors CFBM 20 Capacitive proximity sensors sample drawing 80 ø 20 Pot LED general data sample picture mounting type shielded nominal sensing distance Sn 10 mm nominal sensing distance Sn adjustable 2 . 10 mm temperature drift

Contextual Info: Capacitive sensors Versatile, contactless, durable Edition 2012/2013 With capacitive sensors from Baumer you can complete almost any task. Visibly better: Baumer sensors. The Baumer Group is an internationally leading manufacturer of sensors and system solutions for factory and process automation. Partnership, precision and

Contextual Info: Capacitive proximity sensors CFBM 20 Capacitive proximity sensors sample drawing 80 ø 20 Pot LED sample picture general data mounting type shielded nominal sensing distance Sn 10 mm nominal sensing distance Sn adjustable 2 . 10 mm temperature drift

Contextual Info: Capacitive proximity sensors CFBM 20 Capacitive proximity sensors sample drawing 80 ø 20 Pot LED general data sample picture mounting type shielded nominal sensing distance Sn 10 mm nominal sensing distance Sn adjustable 2 . 10 mm temperature drift

Contextual Info: Capacitive proximity sensors CFBM 20 Capacitive proximity sensors sample drawing 80 ø 20 Pot LED general data sample picture mounting type shielded nominal sensing distance Sn 10 mm nominal sensing distance Sn adjustable 2 . 10 mm temperature drift

SAR oscillateur

Contextual Info: Détecteurs capacitifs Polyvalents, sans contact, durables Edition 2012/2013 Les détecteurs capacitifs de Baumer, la solution à presque toutes vos tâches. Visiblement meilleurs: les détecteurs de Baumer. Le Groupe Baumer est un leader international en matière de fabrication de détecteurs et de solutions de systèmes pour l’automatisation des procédés et des lignes

20p16

Abstract: LED80
Contextual Info: Capacitive proximity sensors CFBM 20 Capacitive proximity sensors sample drawing 80 ø 20 Pot LED sample picture general data mounting type shielded nominal sensing distance Sn 10 mm nominal sensing distance Sn adjustable 2 . 10 mm temperature drift

7n60b

Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
Contextual Info: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3

IXBH 40N160

Abstract: 20N120D1 Insulated Gate Bipolar Transistors 55N120D1 20N120A 20N60BD1 9N140 ixbh9n160 30N120 35N60BD1
Contextual Info: NPT Insulated Gate Bipolar Transistors IGBT D series (SCSOA) V T = 1 5 0 °C ► New V ► IXDP 20N60B 600 v CE(aal) c lM typ. typ. Tc - 25°C Tc = 90°C A A ► IXDP 35N60B ► IXDH 35N60B ► IXDA 20N120A 'c •c CES PF 21 2.0 800 58 40 2.0 ^ 1600 □

50N60

Abstract: 50N100 50n80 40N160 9N160G 50N6
Contextual Info: BIMOSFET High Speed Types in 1400 und 1600 V ► New •e. A *C90 Tc = 25 °C Tc = 90 °C Gate drive V í-H < r o" 1 V CES V Type A □ ^1 tvp ns Package style 6 z Outlines on page 91-100 ri> G = Gate, E = Emitter, LL C = Collector thJC K/W T ,= 125 °C