200JUS Search Results
200JUS Price and Stock
KEMET Corporation C901U200JUSDAA731720.0Pfv; |Kemet C901U200JUSDAA7317 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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C901U200JUSDAA7317 | Tape & Reel | 10,000 |
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KEMET Corporation C901U200JUSDBA731720.0Pfv; |Kemet C901U200JUSDBA7317 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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C901U200JUSDBA7317 | Tape & Reel | 10,000 |
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KEMET Corporation C901U200JUSDCAWL5020.0Pfv; |Kemet C901U200JUSDCAWL50 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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C901U200JUSDCAWL50 | Tape & Reel | 10,000 |
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KEMET Corporation C901U200JUSDAAWL20Ceramic Suppression Capacitor 20 pF 5 X1 Y1 400 Vac 250 Vac Radial Leaded (Alt: C901U200JUSDAAWL20) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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C901U200JUSDAAWL20 | 143 Weeks | 500 |
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200JUS Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
TMP-88
Abstract: BUT32
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OCR Scan |
k48/m48tmp88ck48/m480003f000bf+4 | |
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Contextual Info: •HYUNDAI SEMICONDUCTOR H Y M 5 8 1 O O O A S e rie s 1M x 8-bit CMOS DRAM MODULE DESCRIPTION The HYM581000A is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of two HY514400 in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.2^uF decoupling capacitor Is mounted for each DRAM. |
OCR Scan |
hym581000ahy514400hym581000am50nycle+2 | |
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Contextual Info: • « H Y U N D A I SEMICONDUCTOR H Y M 5 8 1 O O O B S e r ie s 1M X 8 - b it CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM581000B is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of two HY514400A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22//F decoupling capacitor is mounted for each DRAM. |
OCR Scan |
hym581000bhy514400a22//fhym581000bm/blm+3 | |
M51953
Abstract: M51957B 251C M51955A M51955B M51956A M51956B
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OCR Scan |
m51955bm51956bm5195xbm51953+4 | |
LF400Contextual Info: OP-42 PMp HIGH-SPEED, FAST-SETTLING PRECISION OPERATIONAL AMPLIFIER Precision M on o lith ics Inc. FEATURES Fast • S lew R a te . 50V/|is Min • S ettling -Tim e 0 .0 1 % . l^ s M a x |
OCR Scan |
op-42op-41lf400 | |
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Contextual Info: U C C 2 8 6 /7 /8 U C C 3 8 6 /7 /8 UNITRODE Low Dropout 200mA Linear Regulator PRELIMINARY DESCRIPTION The UCC386/7/8 positive linear pass regulator series is tailored for low dropout applications where extremely low quiescent power is required. Fabricated with BiCMOS technology ideally suited for low input to output |
OCR Scan |
200maucc386/7/8ucc386ucc387+1 | |
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Contextual Info: Î1ARKTECH I N T E R N A T I O N A L DARLINGTON COUPLER I f lE D STTTbSS GaAs INFRARED EMITTING DIODE & NPN SILICON PHOTO DARLINGTON iSLjU H - l- APPLICATIONS • AC LINE/DIGITAL LOGIC ISOLATOR • DIGITAL LOGIC/DIGITAL LOGIC ISOLATOR • TELEPHONE LINE RECEIVER |
OCR Scan |
mt5750 | |
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Contextual Info: LG Semicon. Co. LTD. Description Features The GMM7408200AS/SG is an 8M x 40 bits dynamic RAM MODULE which is assembled 20 pieces of 4M x 4 bit DRAMs in 24 pin SOJ package on both side the printed circuit board with decoupling capacitors. The GMM7408200AS/SG is optimized for |
OCR Scan |
gmm7408200as/sggmm7408200asgmm7408200asg | |
LM 458
Abstract: analog devices 460j Model 52K 458J 458L 460J 460L AC1016 Simple Circuit Diagram For Digital Weighing Scale in grams 2NV1
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OCR Scan |
100khz15ppm/150ppmlm55107a+10 | |
Darlington pair IC high current
Abstract: MT5750 51M9
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OCR Scan |
57m55mt5750200jusdarlington pair ic high current+1 | |
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Contextual Info: TT M/HITE /MICROELECTRONICS 1Mx16 CMOS FPM Dynamic RAM WPD1M16-70TJX PRELIMINARY* PLASTIC PLUS FEATURES • Fast Access Time tRAc : 70ns PIN CONFIGURATION TOP VIEW II i/oo C i/oi C 1/02 C Vcc 1/03 1 2 3 4 Vcc C 5 II 6 1/04 1/05 1/06 1/07 C C C C NC C C |
OCR Scan |
1mx16wpd1m16-70tjx | |
34017
Abstract: CL 2182 12 volt ac to dc bridge rectifier circuit CS-8205 CS8204 34017-1 CS-8204 ic cd 4017 "piezo element" sound input CS-34017-1
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OCR Scan |
cs-8205cs-8204kd00pf500pf+9 | |
C11371
Abstract: AD515K 2N 10261 transistor application circuit Transistor AF 138S analog devices modell 281 analog devices modell 118 Model 310J ac121 inverter welder 4 schematic
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OCR Scan |
c11371ad515k2n 10261 transistor application circuittransistor af 138s+5 | |
P42AJ
Abstract: LT 5202 diode LT 5212 diode LF400
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OCR Scan |
750nv200paop-41op-42+4 | |
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Contextual Info: SAM S UN G E L E C T R O N I C S INC b?E D KM48C2000L/LL • 7^4142 OOlbSn b3b H S M ä K CMOS DRAM 2 M x 8 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM48C2000L/LL is a C MOS high speed 2,097,152 b itx S Dynam ic Random Access Memory, it's |
OCR Scan |
km48c2000l/llkm48c2000l/ll-6110nskm48c2000l/ll-7+4 | |
ENS150-11AContextual Info: ENS060-13 ^ ± S S A Outline D raw ings SILICON SURGE ABSORBERS a m 01 T - * K i * * • > « * 'J - PI#* «(S BttA-Ktea) A . □ *y V U 1.6ÍÜ.3 ' _ 1 E "51 !l r 1.6±0.3 ■ Æ fê fc ifè 'IÉ : M a xim u m Ratings and Characteristics : A b s o lu te M a x im u m R a tin g s |
OCR Scan |
ens060-13ta0878i95t/r89sh150+1 | |
Analog Devices model 233J
Abstract: alfa uv API 45 AD0042C AC1007 analog devices TSDC1610 AD504 fetal monitor device circuit diagrams AD533J Helitrim AD 233J
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OCR Scan |
ad504j/k/l/m/sad505ad506j/k/l/sad507j/k/s+16 | |
AD308
Abstract: AD5811 AD581 AD581J AD581K AD581L AD581S AD581T AD581U Limiter PIN diode ADS model
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OCR Scan |
10ppnn/25pprad581100s2+11 | |
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Contextual Info: @ LG Semicon. Co. LTD. Description Features The GMM7364200ANS/SG is a 4M x 36 bits Dynamic RAM MODULE which is assembled 9 pieces of 4M x 4bit DRAMs in 24/26 pin SOJ package on the printed circuit board with decoupling capacitors. The GMM7364200ANS/SG is optimized for |
OCR Scan |
gmm7364200ans/sggmm7364200ansgmm7364200ansgiip7111111111111111ii11111111111111111111 | |
Ti3C
Abstract: GMM7322000AN
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OCR Scan |
gmm7322000ans/sg16bitgmm7322000ansgmm7322000ansg+3 | |
TDA 6275
Abstract: cpu MT 6225 tda 6205 6.2N2 MT 6225 TDA 6130 HM-6102 62458 MT 6235 design sequential circuit of clocked RS flip flop
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OCR Scan |
hd-6102hm-610012-bit32-co+10 | |
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Contextual Info: KM44C401OA/AL/ALL/ASL CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode Write Per Bit Mode GENERAL DESCRIPTION FEATURES • Performance range: tR A C tC A C tR C KM 44C 401O A/AL/ALL/A SL-5 50ns 13ns 90ns KM 44C 401O A /A L/A LL/A S L-6 60ns 15ns |
OCR Scan |
km44c401oa/al/all/aslkm44c40124-lead400mil | |
81C466-10Contextual Info: 262144 BIT CMOS FU JITSU STATIC COLUMN 050100010001050102010102000002010002 DYNAMIC RAM MB 81C466-10 MB 81C466-12 MB 81C466-15 I 1 1 March 1987 E d itio n 2.0 6 5 ,5 3 6 x 4 BIT CMOS STATIC COLUMN DYNAMIC RANDOM ACCESS MEMORY T he F u jits u M B 8 1 C 4 6 6 is s ta tic c o lu m n d y n a m ic ra n d o m access m e m o ry , |
OCR Scan |
321ref81c466-1081c466-1281c466-15+2 | |
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Contextual Info: •HYUNDAI SEMICONDUCTOR HYM594000A Series 4M X 9-bit CMOS DRAM MODULE DESCRIPTION The HYM594000A is a 4M x 9-bit Fast page mode CMOS DRAM module consisting of nine HY5114100A In 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22^<F decoupling capacitor Is mounted for each DRAM. |
OCR Scan |
hym594000ahy5114100ahym594000am/alm1bc04-10-may93+1 | |