KM44C401 Search Results
KM44C401 Datasheets Context Search
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Contextual Info: KM44C401OA/AL/ALL/ASL CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C401OA/AL/ALL/ASL is a high speed CMOS 4,194,304 b it x 4 Dynamic Random Access Memory. Its design is optim ized for high |
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km44c401oa/al/all/aslkm44c401oa/al/all/asl-5km44c401oa/al/all/asl-6110ns+5 | |
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Contextual Info: KM44C4010 CMOS DRAM 4 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode Write Per Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C4010 is a high speed CMOS 4 ,1 9 4 ,3 0 4 X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications |
OCR Scan |
km44c401024-lead | |
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Contextual Info: KM44C401OA/AL/ALL/ASL CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode Write Per Bit Mode GENERAL DESCRIPTION FEATURES • Performance range: tR A C tC A C tR C KM 44C 401O A/AL/ALL/A SL-5 50ns 13ns 90ns KM 44C 401O A /A L/A LL/A S L-6 60ns 15ns |
OCR Scan |
km44c401oa/al/all/aslkm44c40124-lead400mil | |
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Contextual Info: KM44C4010A, KM44C4110A CMOS DRAM 4M x 4 Bit CMOS DRAM with Fast Page Mode Write per Bit Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode(Write per Bit mode) CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle(2K Ref. or 4K Ref.), |
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km44c4010akm44c4110a | |
7-it4142
Abstract: it4142 KM44C4100A A10EZ
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km44c401km44c4110a0g203077-it4142+3 | |
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Contextual Info: SAMSUNG ELECTRONICS INC b7E D • TTbMlME GOlbSlT 373 «SflGK KM44C4010 CMOS DRAM 4M X 4 Bit CMOS Dynamic RAM with Fast Page Mode Write Per Mode GENERAL DESCRIPTION FEATURES • Performance range: • • • • • • • • • • • tR A C tC A C |
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km44c4010km44c4010-7130nskm44c4010-8+3 | |
33A6
Abstract: HA11-7
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km44c401oakm44c4110a33a6ha11-7 | |
KM44C4000aS 6
Abstract: KM44C4000AS KM44C4000A-S km44c4100as KM48V2100AL KM416V256BL
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km41c4000c-5km41c4000cl-5km41c4002c-5km41c4000c-6+12 | |
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Contextual Info: TABLE OF CONTENTS I. PRODUCT GUIDE 1. Introduction. 11 2. Product G u id e . 18 3. DRAM Ordering System. 23 |
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km41c1000dkm44c256dkm41c4000ckm41v4000c | |
23C1001
Abstract: KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000
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km41c1000c-6km41c1000cl-6km41c1000csl-6256kx4+15 | |
KM418C256
Abstract: KM48C2100AL KM416C254 KM44V4100AL KM44C1003
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km41c1000dkm41c10ood-l256kx4km44c256d+10 | |
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Contextual Info: KM44C1012B CMOS DRAM 1M x 4Bit CM O S Dynamic R A M with Static Column Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C1012B is a high speed CMOS 1 ,0 4 8 ,5 7 6 x 4 Dynamic Random Access Memory. Its design is optimized for high performance applications |
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km44c1012bkm44c1012b-6km44c1012b-7km44c1012b-8+3 | |
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Contextual Info: SAMSUNG ELECTRONICS INC b?E D • 7 ^ 4 1 4 2 Q01S74S QÛ2 I KM44C1012B CMOS DRAM 1 M x 4Bit CMOS Dynamic RAM with Static Column Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C1012B is a high speed CMOS 1 ,0 4 8 ,5 7 6 x 4 Dynamic Random Access Memory. Its |
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q01s74skm44c1012b110nskm44c1012b-7+5 | |
KMCJ532512
Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
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km41c1000c-6km41c1000cl-6km41c1000csl-6km44c256c-6+15 | |
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