20 AMPERE DIODE Search Results

CHM2030JGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual Enhancement Mode Field Effect Transistor N-channel: VOLTAGE 20 Volts P-channel: VOLTAGE 20 Volts CHM2030JGP CURRENT 6 Ampere CURRENT 4.3 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.

DIODE 83A

Contextual Info: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual Enhancement Mode Field Effect Transistor N-channel: VOLTAGE 20 Volts P-channel: VOLTAGE 20 Volts CHM4501JPT CURRENT 8.3 Ampere CURRENT 5 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.

P-channel AND N-Channel power mosfet SO-8 ENHANCEMENT

Abstract: transistor DD 127 D
Contextual Info: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual Enhancement Mode Field Effect Transistor N-channel: VOLTAGE 20 Volts P-channel: VOLTAGE 20 Volts CHM2030JPT CURRENT 6 Ampere CURRENT 4.3 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.

CHM4501JGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual Enhancement Mode Field Effect Transistor N-channel: VOLTAGE 20 Volts P-channel: VOLTAGE 20 Volts CHM4501JGP CURRENT 8.3 Ampere CURRENT 5 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.

1n5819 trr

Abstract: Khandelwal Herrmann Electronics 1N5817 1N5819 202E SR120 SR180 1n5817 trr
Contextual Info: Bulletin 55 - 301 KHEL Khandelwal Herrmann Electronics Limited Voltage : 20 - 80 Volts Current : 1 Ampere TECHNICAL SPIFICATIONS OF 1 AMPERE SCHOTTKY BARRIER DIODES TYPE 1N5817 TO 1N5819 AND SR120 TO SR180 FEATURES • Low Cost 25.4 MIN • Low Leakage • Low Forward Voltage Drop

CHM11C2JGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual Enhancement Mode Field Effect Transistor N-channel: VOLTAGE 30 Volts P-channel: VOLTAGE 20 Volts CHM11C2JGP CURRENT 7 Ampere CURRENT 4.3 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.

P-channel AND N-Channel power mosfet SO-8 ENHANCEMENT

Abstract: diode 106 16V
Contextual Info: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual Enhancement Mode Field Effect Transistor N-channel: VOLTAGE 30 Volts P-channel: VOLTAGE 20 Volts CHM11C2JPT CURRENT 7 Ampere CURRENT 4.3 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.

Contextual Info: i, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 MJ10005 FAX: (973) 376-8960 SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode 20 AMPERE NPN SILICON POWER DARLINGTON

CHM21A2PAGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CHM21A2PAGP CURRENT 20 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK TO-252 FEATURE

Contextual Info: B120N Series Surface Mount Schottky Barrier Diodes REVERSE VOLTAGE 20-100Volts FORWARD CURRENT 1.0 Ampere Features: * Surface Mounted Applications * Metal-Semiconductor Junction with Guardring * Epitaxial Construction * Low Leakage Current * High Current Capability

B120N

Abstract: B140N B160N
Contextual Info: B120N/B140N B160N Surface Mount Schottky Barrier Diodes REVERSE VOLTAGE 20-60Volts FORWARD CURRENT 1.0 Ampere Features: * Surface Mounted Applications * Metal-Semiconductor Junction with Guardring * Epitaxial Construction * Low Leakage Current * High Current Capability

SOD-323F

Abstract: b120n sod-323f diode B140N B160N
Contextual Info: B120N/B140N B160N Surface Mount Schottky Barrier Diodes REVERSE VOLTAGE 20-60Volts FORWARD CURRENT 1.0 Ampere Features: * Surface Mounted Applications * Metal-Semiconductor Junction with Guardring * Epitaxial Construction * Low Leakage Current * High Current Capability

gs 069

Abstract: 20 ampere MOSFET datasheet
Contextual Info: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CHM21A2PAPT CURRENT 20 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. TO-252A FEATURE * Small package. TO-252A

MR1367

Abstract: MR830 IN3889 1N3879-1N3883 1n49331n4937 1N3880 1N3891 1N3892 1N3893 1N4937
Contextual Info: ● FAST RECOVERY SILICON RECTIFIERS vRM rep 50 100 ‘RM(wkg)’ 12 I 1 20 * Fi~re 1N3880 - I I.-,NIRQO - I I 30 thru 1N3SS3 11 N3SS9 thru 1N3S93 ‘lN~~99 thru WW3903 ● 200 ‘R(volts) 300 400 ● 600 , I I 11 N3S79 ● lFM(surge)* Ampere Ampere

transorb failure

Abstract: 400 AMP 28 VDC CIRCUIT BREAKER
Contextual Info: SERIES 90000–28 & 270-VDC, @10 & 20 AMPS GENERAL DESCRIPTION Series 90000 Solid-State Power Controllers are TTL-controlled power switches with programmable trip characteristics designed for use as solid-state replacements for 3- to 20-ampere circuit breakers.

Contextual Info: SERIES 90000–28 & 270-VDC, @10 & 20 AMPS GENERAL DESCRIPTION Series 90000 Solid-State Power Controllers are TTL-controlled power switches with programmable trip characteristics designed for use as solid-state replacements for 3- to 20-ampere circuit breakers.

Amp. mosfet 1000 watt

Abstract: transorb diode transorb transorb applications notes MIL-STD-1772 400 AMP 28 VDC CIRCUIT BREAKER sspc 270V 10 amp igbt 1000 volt 200w computer power supply Circuit diagram sspc
Contextual Info: SERIES 90000–28 & 270-VDC, @10 & 20 AMPS GENERAL DESCRIPTION Series 90000 Solid-State Power Controllers are TTL-controlled power switches with programmable trip characteristics designed for use as solid-state replacements for 3- to 20-ampere circuit breakers.

LL5817

Abstract: LL5818 LL5819 melf diodes color
Contextual Info: LL5817 - LL5819 SCHOTTKY BARRIER RECTIFIER DIODES PRV : 20 - 40 Volts IO : 1.0 Ampere MELF Cathode Mark FEATURES : * * * * * * * High current capability High surge current capability High reliability High efficiency Low power loss Low forward voltage drop

D45H11 equivalent replacement

Abstract: 2N5036 equivalent BU108 2SD218 equivalent MJE6044 equivalent BD420 equivalent 2SB557 equivalent BU326 BU100 MJ10009
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10009*  Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode *Motorola Preferred Device 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 450 and 500 VOLTS

Contextual Info: TH09/2479 TH97/2478 www.eicsemi.com 1N5820 - 1N5822 IATF 0113686 SGS TH07/1033 SCHOTTKY BARRIER RECTIFIER DIODES PRV : 20 - 40 Volts IO : 3.0 Ampere DO - 201AD FEATURES : * * * * * * * * High current capability High surge current capability High reliability

Contextual Info: B120N/B140N B160N Surface Mount Schottky Barrier Diodes * “G” Lead Pb -Free REVERSE VOLTAGE 20-60Volts FORWARD CURRENT 1.0 Ampere Features: * Surface Mounted Applications * Metal-Semiconductor Junction with Guardring * Epitaxial Construction * Low Leakage Current

MJ-10000

Contextual Info: ^E.mi-Condu<itoi ^Pioduch, TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MJ10000 Designer's Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistor 20 AMPERE NPN SILICON POWER DARLINGTON

transorb failure

Abstract: transorb sspc 270V transorb capacitance 270vdc
Contextual Info: SERIES 91000– 28 & 270-VDC, @10 & 20 AMPS GENERAL DESCRIPTION Series 91000 Solid-State Power Controllers are TTL-controlled power switches with programmable trip characteristics designed for use as solid-state replacements for 3- to 20-ampere circuit breakers.

Contextual Info: B120N/B140N B160N Surface Mount Schottky Barrier Diodes * “G” Lead Pb -Free REVERSE VOLTAGE 20-60Volts FORWARD CURRENT 1.0 Ampere Features: * Surface Mounted Applications * Metal-Semiconductor Junction with Guardring * Epitaxial Construction * Low Leakage Current