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    B160N Search Results

    B160N Datasheets (3)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    B160N
    Weitron Surface Mount Schottky Barrier Diodes Original PDF 138.38KB 3
    B160NF3LL
    STMicroelectronics N-channel 30V - 0.0028ohm - 160A - D2PAK STripFET TM III Power MOSFET Original PDF 400.12KB 13
    badge SLB160N10G3
    Maplesemi N-Channel MOSFET with 100V drain-source voltage, 160A continuous drain current, 3.7mΩ typical RDS(on) at VGS = 10V, low Crss, fast switching, and 100% avalanche tested, housed in TO-263 package. Original PDF
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    B160N Price and Stock

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    Infineon Technologies AG IKQB160N75CP2AKSA1

    - Rail/Tube (Alt: IKQB160N75CP2AKSA1)
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    Avnet Americas IKQB160N75CP2AKSA1 Tube 66 1
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    Newark IKQB160N75CP2AKSA1 Bulk 124 1
    • 1 $7.65
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    • 100 $6.82
    • 1000 $6.79
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    Rochester Electronics IKQB160N75CP2AKSA1 1,344 1
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    • 100 $4.08
    • 1000 $3.65
    • 10000 $3.43
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    Infineon Technologies AG AIKQB160N75CP2AKSA1

    - Rail/Tube (Alt: AIKQB160N75CP2AKSA1)
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    Avnet Americas AIKQB160N75CP2AKSA1 Tube 240
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    EBV Elektronik AIKQB160N75CP2AKSA1 71 Weeks 240
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    Infineon Technologies AG AIKQB160N75CP2ALSA1

    - Rail/Tube (Alt: AIKQB160N75CP2ALSA1)
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    Avnet Americas AIKQB160N75CP2ALSA1 Tube 26 Weeks 240
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    Mouser Electronics AIKQB160N75CP2ALSA1 240
    • 1 $13.47
    • 10 $8.14
    • 100 $7.30
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    Newark AIKQB160N75CP2ALSA1 Bulk 240 1
    • 1 $14.28
    • 10 $12.39
    • 100 $8.01
    • 1000 $7.24
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    STMicroelectronics STB160N75F3

    Power MOSFET, N Channel, 75 V, 60 A, 0.0035 ohm, TO-263 (D2PAK), Surface Mount - Tape and Reel (Alt: STB160N75F3)
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    Avnet Americas STB160N75F3 Tape & Reel 15 Weeks 1,000
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    Mouser Electronics STB160N75F3
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    TME STB160N75F3 1,000
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    Avnet Silica STB160N75F3 16 Weeks 1,000
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    EBV Elektronik STB160N75F3 16 Weeks 1,000
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    Vyrian STB160N75F3 6,524
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    Win Source Electronics STB160N75F3 5,000
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    • 100 $3.25
    • 1000 $2.91
    • 10000 $2.91
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    Infineon Technologies AG IPB160N04S2L03ATMA2

    MOS Power Transistors LV (< 200V) - Tape and Reel (Alt: IPB160N04S2L03ATMA2)
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    Avnet Americas IPB160N04S2L03ATMA2 Tape & Reel 12 Weeks 1,000
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    Mouser Electronics IPB160N04S2L03ATMA2
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    • 10000 $1.84
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    Newark IPB160N04S2L03ATMA2 Cut Tape 1
    • 1 $2.69
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    Rochester Electronics IPB160N04S2L03ATMA2 160 1
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    TME IPB160N04S2L03ATMA2 1,000
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    Rutronik IPB160N04S2L03ATMA2 Tape & Reel 1,000 1,000
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    EBV Elektronik IPB160N04S2L03ATMA2 13 Weeks 1,000
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    B160N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    B120N

    Abstract: B140N B160N
    Contextual Info: B120N/B140N B160N Surface Mount Schottky Barrier Diodes REVERSE VOLTAGE 20-60Volts FORWARD CURRENT 1.0 Ampere Features: * Surface Mounted Applications * Metal-Semiconductor Junction with Guardring * Epitaxial Construction * Low Leakage Current * High Current Capability


    Original
    B120N/B140N B160N 20-60Volts OD-323F OD-323F ML-STD-750 OD-323F1 B120N B140N B160N PDF

    SOD-323F

    Abstract: b120n sod-323f diode B140N B160N
    Contextual Info: B120N/B140N B160N Surface Mount Schottky Barrier Diodes REVERSE VOLTAGE 20-60Volts FORWARD CURRENT 1.0 Ampere Features: * Surface Mounted Applications * Metal-Semiconductor Junction with Guardring * Epitaxial Construction * Low Leakage Current * High Current Capability


    Original
    B120N/B140N B160N 20-60Volts OD-323F OD-323F ML-STD-750 SOD-323F b120n sod-323f diode B140N B160N PDF

    Contextual Info: B120N/B140N B160N Surface Mount Schottky Barrier Diodes * “G” Lead Pb -Free REVERSE VOLTAGE 20-60Volts FORWARD CURRENT 1.0 Ampere Features: * Surface Mounted Applications * Metal-Semiconductor Junction with Guardring * Epitaxial Construction * Low Leakage Current


    Original
    B120N/B140N B160N 20-60Volts OD-323F OD-323F ML-STD-750 PDF

    Contextual Info: B120N/B140N B160N Surface Mount Schottky Barrier Diodes * “G” Lead Pb -Free REVERSE VOLTAGE 20-60Volts FORWARD CURRENT 1.0 Ampere Features: * Surface Mounted Applications * Metal-Semiconductor Junction with Guardring * Epitaxial Construction * Low Leakage Current


    Original
    B120N/B140N B160N 20-60Volts OD-323F OD-323F ML-STD-750 PDF

    Contextual Info: B120N Series Surface Mount Schottky Barrier Diodes REVERSE VOLTAGE 20-100Volts FORWARD CURRENT 1.0 Ampere Features: * Surface Mounted Applications * Metal-Semiconductor Junction with Guardring * Epitaxial Construction * Low Leakage Current * High Current Capability


    Original
    B120N 20-100Volts OD-323F OD-323F ML-STD-750 300us 21-Oct-2011 PDF

    Contextual Info: B160NF3LL N-channel 30V - 0.0028Ω - 160A - D2PAK STripFET III Power MOSFET General features Type VDSS RDS on ID B160NF3LL 30V <0.0033Ω 160A(1) ) s ( ct 1. Value limited by wire bonding • 100% avalanche tested ■ Ultra low on-resistance ■ Logic level device


    Original
    STB160NF3LL STB100NH02L PDF

    AD2S80S

    Contextual Info: ANALOG DEVICES Variable Resolution Resolver-to-Digital Converter 2S80 1.1 Scope. This specification covers the detail requirements for a resolver-to-digital converter with up to 16 bits resolution and accuracies of 8 and 4 arc mins. 1.2 Part Number. The complete part number per Table 1 of this specification is as follows:


    OCR Scan
    AD2S80S /883B AD2S80T ADI-M-1000: 40-Lead 44-Terminal D-40A E-44A MIL-STD-883 PDF

    B160NF3LL

    Abstract: JESD97 STB100NH02L STB160NF3LL
    Contextual Info: B160NF3LL N-channel 30V - 0.0028Ω - 160A - D2PAK STripFET III Power MOSFET General features Type VDSS RDS on ID B160NF3LL 30V <0.0033Ω 160A(1) 1. Value limited by wire bonding • 100% avalanche tested ■ Ultra low on-resistance ■ Logic level device


    Original
    STB160NF3LL STB100NH02L B160NF3LL B160NF3LL JESD97 STB160NF3LL PDF