1Z12 Search Results

Contextual Info: 1Z12A Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage12.0 @I(Z) (A) (Test Condition)10m Tolerance (%)5 P(D) Max. (W)1.0 Z(z) Max. (ê) Dyn. Imped.30 Temp Coef pp/10k10.8 Maximum Operating Temp (øC)150õ Package StyleDO-15

Contextual Info: 1Z12 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage12 @I(Z) (A) (Test Condition)10m Tolerance (%)10 P(D) Max. (W)1.0 Z(z) Max. (ê) Dyn. Imped.30 Temp Coef pp/10k6.7 Maximum Operating Temp (øC)150õ Package StyleDO-15

S4 87A

Abstract: 1S990-A Z12A 1S1540 1S798 1S799 1S800 1S989 1Z10 1Z10A
Contextual Info: - • w "J W è t\ » m m m s ft % p 1S798 1S799 1S799 1S800 1S800® 1S989 1S990-A 1SI 540 1S1540® 1Z6. 2 1Z6. 8 1Z6.8A 1Z7. 5 1Z7.5A 1Z8. 2 1Z8.2A 1Z9. 1 1Z9. ÎA 1Z10 1Z10A 1Z11 1Z11A 1212 1Z12A 1Z13 1Z13A IZ15 1Z15A 1Z16 1Z16A 1Z18 1Z18A 1Z20 1Z20A 1Z22

smd 1gw

Abstract: diode Z47 1ZB36 1ZB20 zener U1DL49 1ZB20 6B4B41 FAST RECOVERY DIODE 200ns 2a 1B4B41 J2C42
Contextual Info: a SELECTOR GUIDE The following products are recommended for use in any new circuitry designs. General Purpose Rectifiers —> Peak Repetitive Reverse Voltage 600V 1000V 1S 1887 1S 1888 1S 1830 S5277B S5277G S5277J S5277N D O -41S S5566B S5566G S5566J S5566N

1Z51

Contextual Info: 1Z6.2~1Z390,1Z6.8A~1Z30A TOSHIBA ZENER DIODE SILICON DIFFUSED JUNCTION TYPE 1Z6.2~1Z390,1Z6.8A~1Z30A Unit: mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS z Average Power Dissipation :P=1W z Peak Reverse Power Dissipation : PRSM = 200 W at tw = 200 s

Z6 ZENER DIODE

Abstract: Z6 DIODE LZ13A 2-1Z390 21Z3 zener diode IN 825 1Z18A zener diode si 18 LZ6.8 z390
Contextual Info: TOSHIBA 1Z 6 . 2 - 1Z390,1Z 6 . 8 A - 1Z30A TO SHIBA ZENER DIODE SILICON DIFFUSED JUNCTION TYPE 1Z6.2-1Z390, 1 Z 6.8 A -1Z 3 0 A CONSTANT VOLTAGE REGULATION Unit in mm TRANSIENT SUPPRESSORS Average Power Dissipation : P = 1W Peak Reverse Power Dissipation :

1Z150

Abstract: 1Z10 1Z10A 1Z11 1Z11A 1Z12 1Z12A 1Z13 1Z30A 1Z390
Contextual Info: 1Z6.2~1Z390,1Z6.8A~1Z30A TOSHIBA ZENER DIODE SILICON DIFFUSED JUNCTION TYPE 1Z6.2~1Z390,1Z6.8A~1Z30A Unit: mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS l Average Power Dissipation : P = 1W l Peak Reverse Power Dissipation : PRSM = 200W at tw = 200µs

1Z12

Abstract: 1Z10 1Z10A 1Z11 1Z11A 1Z12A 1Z13 1Z30 1Z30A 1Z390
Contextual Info: 1Z6.2~1Z390,1Z6.8A~1Z30A TOSHIBA ZENER DIODE SILICON DIFFUSED JUNCTION TYPE 1Z6.2~1Z390, 1Z6.8A~1Z30A Unit: mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS Average Power Dissipation :P=1W Peak Reverse Power Dissipation : PRSM = 200 W at tw = 200 µs : VZ = 6.2 V ~ 390 V

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

12129811

Contextual Info: 24 23 21 22 19 20 17 IB 16 15 14 V 10 11 7 8 SYMBOL DEFINITION SEALING SURFACE MUST BE SMOOTH AND FREE OF INPERFECTIONS FOR DISTANCE SHOWN SURFACE FINISH 16 MICRO INCHES RMS MISSING SYMBOLS A DIMENSION WITHOUT AN INSPECTION REPORT SYMBOL DOES NOT REQUIRE INSPECTION.

transistor a2160

Abstract: transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mn15151 mini circuits 15542 A1270 Y AN 5606K
Contextual Info: Type Number List • Integrated Circuits MOS LSIs M O S L S Is Page Type No, M N 5117 M N171605 32,42 AM N18P83221 43 M N 3671A 62 M N 5126 87 43 M N 3672 62 M N 5128 87 37 ,4 4,45 46 M N 1256 46 M N 1258 46 M N 1259 46 M N12861 46 M N 12862 46 M N 187124

3866S

Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
Contextual Info: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series

1V100RK

Abstract: 1T330 1Z56 N2400 1C39RK N5600 1p39 1V75RK N220 N3300
Contextual Info: 1002 Reader's 6/21/99 11:36 AM Page 29 Leaded Temperature Compensating Capacitors • ■ ■ Available in NPO through N5600 dielectrics Specifically designed temperature coefficient characteristic curve Used in high shock and cross over applications Specifications

1ZB36

Abstract: 2z47 1J4B41 1B4B42 100L6P43 1Z16 6G4B41 3Z150 30L6P45 10GL2CZ
Contextual Info: 1 PART NUMBER INDEX P art No. 05B4B48 05G4B48 05GU4B48 05J4B48 05NH45 05NH46 05NU41 05NU42 0R8GU41 100G6P43 100L6P43 100Q6P43 100U6P43 10B4B41 10DL2C41A 10DL2C48A 10DL2CZ47A 10FL2C48A 10FL2CZ47A 10G4B41 10GL2CZ47A 10GWJ2C48C 10GWJ2CZ47C 10J4B41 10JL2CZ47 10JWJ2CZ47

1S1540

Abstract: 1S798 1S799 1S800 1S989 1S990-A 1Z10 1Z10A 1Z11 1Z11A
Contextual Info: - • w m s ft % p mm 12 Vz V Wèt\ "J » Zzmax LW h JJ.-L«* J 3Hi \ r Vz I Rinax Zzfcmax * © fft :i (mt) (nA) 1S798 1S799 1S799 1S800 1S800® 1S989 1S990-A 1SI 540 1S1540® 1Z6. 2 1Z6. 8 1Z6.8A 1Z7. 5 1Z7.5A 1Z8. 2 1Z8.2A 1Z9. 1 1Z9. ÎA 1Z10 1Z10A

1Z16

Abstract: 1Z10 1Z11 1Z12 1Z13 1Z15 1Z18 1Z20 1Z22 1Z4.7
Contextual Info: SIYU R 1Z Series 特征 Features DO-41 Glass max. 0.82 •反向漏电流小。 Low reverse leakage ·齐纳击穿阻抗低。Low zener impedance ·最大功率耗散1000mW。 Maximum power dissipation of 1000 mW min. 27.5 ·高稳定性和可靠性。 High stability and high reliability

1Z27A

Abstract: 1Z10 1Z10A 1Z11 1Z11A 1Z12 1Z12A 1Z13 1Z13A 1Z390
Contextual Info: BL GALAXY ELECTRICAL ZENER DIODES 1Z6.2 - - - 1Z390 POWER DISSIPATION: 1.0 W FEATURES DO - 15 Silicon planar power zener diodes For use in stabilizing and clipping curcuits with high power rating. Standard zener voltage tolerance is ±10%. Add suffix "A" for ±5% tolerance. Other zener voltage

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

zener diode xz 117

Abstract: Z6.2 zener xz 117 zener diode xz 200 Z6 ZENER DIODE 1Z16 0424g Zener Diode 3A Z6,2 ZENER DIODE 1Z10
Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA b? D I S C R E T E / O PT O 1Z 6.2-1Z 30 T| TDTVESO m 67C 09383 □ □ □ ci 3 ñ 3 D T " ' 7" ^ Silicon Diffused Type Zener Diode APPLICATIONS: Unit in mm . CONSTANT VOLTAGE REGULATION €E . TRANSIENT SUPPRESSORS

63A MCCB

Abstract: DC Motor 3hp 3hp 150 mccb tripping curve 3Z32 3d05 VAC-265 30HP 160A mccb curve 1z2.5
Contextual Info: Typical UL508 Application Altech's V-EA UL508 Manual Motor Controllers are approved for Group Installations Disclaimer: This an application example. Installation should be done by a qualified electrician under the guidance of UL/NEC specifications. Altech Corp.® • 35 Royal Road • Flemington, NJ 08822-6000 • Phone 908 806-9400 • FAX (908)806-9490 • www.altechcorp.com

1Z10

Abstract: 1Z10A 1Z11 1Z11A 1Z12 1Z12A 1Z13 1Z30 1Z30A 1Z390
Contextual Info: 1Z6.2~1Z390,1Z6.8A~1Z30A TOSHIBA ZENER DIODE SILICON DIFFUSED JUNCTION TYPE 1Z6.2~1Z390, 1Z6.8A~1Z30A Unit: mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS z Average Power Dissipation :P=1W z Peak Reverse Power Dissipation : PRSM = 200 W at tw = 200 µs

Contextual Info: TOSHIBA 1Z6.2~1Z390,1Z6.8A~1Z30A TO SHIBA ZENER DIODE SILICON DIFFUSED JUNCTION TYPE 1Z6.2-1Z390, 1Z6.8A-1Z30A Unit in mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS & Average Power Dissipation : P=1W Peak Reverse Power Dissipation : P r s M“ 200W at tw = 200/¿s

Contextual Info: SIYU R 1Z Series 特征 Features DO-41 Glass max. 0.82 ・反向漏电流小。 Low reverse leakage ・齐纳击穿阻抗低。Low zener impedance ・最大功率耗散1000mW。 Maximum power dissipation of 1000 mW min. 27.5 ・高稳定性和可靠性。 High stability and high reliability

zener diode 1NU 9F

Abstract: diode 1NU DLA DIODE TOSHIBA diode 1NU 7.1 NH5 Diode Schottky diode TO220 15A 1000V diode 1NU 5.1 diode 1NU 6F 10lc48 GU 1R5
Contextual Info: 2004-3 PRODUCT GUIDE Small and Medium Diodes semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Contents 1. Diode Product Tree 3 2. Selection Guide by Product Categories 4 3. Definitions and Terms 8 4. Symbols and Terms 9 5. Device Characteristics 5.1 General-Purpose Rectifiers: