1SS35 Search Results
1SS35 Result Highlights (1)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| 1SS352 | Toshiba Electronic Devices & Storage Corporation | Switching Diode, 80 V, 0.1 A, USC, AEC-Q101 | Datasheet |
1SS35 Datasheets (108)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| 1SS350 | Kexin | UHF Detector Mixer Applications | Original | 31.78KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1SS350 | Sanyo Semiconductor | Silicon Epitaxial Schottky Barrier Diode | Original | 53.45KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1SS350 | TY Semiconductor | UHF Detector Mixer Applications - SOT-23 | Original | 57.3KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1SS350 | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | 80.43KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1SS350 | Unknown | The Diode Data Book with Package Outlines 1993 | Scan | 82.24KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1SS350 | Unknown | High Frequency Device Data Book (Japanese) | Scan | 52.26KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1SS351 | Kexin | Silicon Epitaxial Schottky Barrier Diode | Original | 31.44KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1SS351 | Sanyo Semiconductor | Series | Original | 52.52KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1SS351 | TY Semiconductor | Silicon Epitaxial Schottky Barrier Diode - SOT-23 | Original | 56.98KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1SS351 | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | 80.43KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1SS351 | Unknown | The Diode Data Book with Package Outlines 1993 | Scan | 82.24KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1SS351 | Unknown | High Frequency Device Data Book (Japanese) | Scan | 52.26KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1SS351-TB-E | On Semiconductor | 1SS351 - Schottky Barrier Diode 5V 30mA VF;230mV Dual CP | Original | 261.97KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1SS351-TB-E | SANYO Electric | RF Diodes, Discrete Semiconductor Products, DIODE SCHOTTKY 5V 30MA 3CP | Original | 2 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1SS352 | Kexin | Ultra High Speed Switching Application | Original | 30.29KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1SS352 | Toshiba | Diode - Silicon Epitaxial Planar Type | Original | 140.84KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1SS352 | Toshiba | Japanese - Diodes | Original | 293KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1SS352 | TY Semiconductor | Ultra High Speed Switching Application - SOD-323 | Original | 55.72KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1SS352 | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | 80.43KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1SS352 | Unknown | The Diode Data Book with Package Outlines 1993 | Scan | 86.78KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SS35 Price and Stock
ROHM Semiconductor 1SS355VMTE-17Diode Switching Si 90V 0.225A 2-Pin UMD T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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1SS355VMTE-17 | 282,342 | 2,174 |
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| 1SS355VMTE-17 | 30,500 | 1,500 |
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| 1SS355VMTE-17 | 400 | 400 |
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1SS355VMTE-17 | Cut Strips | 1,071,865 | 26 Weeks | 1 |
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1SS355VMTE-17 | Cut Tape | 12,426 | 5 |
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| 1SS355VMTE-17 | Tape & Reel | 12,426 | 100 |
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| 1SS355VMTE-17 | Tape & Reel | 3,000 |
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1SS355VMTE-17 | Reel | 3,159,000 | 3,000 |
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1SS355VMTE-17 | 9,955 | 1 |
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| 1SS355VMTE-17 | 3,531 |
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1SS355VMTE-17 | 1 |
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1SS355VMTE-17 | 195,910 | 1 |
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1SS355VMTE-17 | 15,000 | 26 Weeks | 3,000 |
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1SS355VMTE-17 | 167,530 |
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ROHM Semiconductor 1SS355TE-17Diode Switching Si 90V 0.225A 2-Pin UMD T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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1SS355TE-17 | 240,000 | 3,000 |
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1SS355TE-17 | 152,995 | 1 |
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| 1SS355TE-17 | 28,957 |
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| 1SS355TE-17 | 1,517 | 1 |
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1SS355TE-17 | 24 Weeks | 3,000 |
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1SS355TE-17 | Tape & Reel | 6,000 | 15 Weeks | 3,000 |
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1SS355TE-17 | 14,423 |
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1SS355TE-17 | 84,061 |
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Taiwan Semiconductor 1SS355 R9GDiode Small Signal Switching 90V 0.25A 2-Pin SOD-323F T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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1SS355 R9G | 71,891 | 6,024 |
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1SS355 R9G | Tape & Reel | 64 Weeks | 10,000 |
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1SS355 R9G | 71,891 | 5,952 |
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1SS355 R9G | 10,000 | 18 Weeks | 10,000 |
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ROHM Semiconductor 1SS356TW11Diode PIN Switch 35V 100mA 2-Pin UMD T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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1SS356TW11 | 47,197 | 43 |
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| 1SS356TW11 | 3,000 | 800 |
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| 1SS356TW11 | 32 | 32 |
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1SS356TW11 | Cut Strips | 47,197 | 18 Weeks | 1 |
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1SS356TW11 | 5,881 | 1 |
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1SS356TW11 | 21,000 |
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1SS356TW11 | 193,900 |
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EIC Corporation 1SS355Silicon Epitaxial High Speed Switching Diode |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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1SS355 | 30,000 | 12,000 |
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1SS35 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
smd diode UM
Abstract: smd diode marking um 1SS352 marking Um diode smd diode UM 85 smd diode UM 16
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1ss352od-323smd diode umsmd diode marking um+3 | |
1SS357Contextual Info: 1SS357 SCHOTTKY DIODE FEATURES * Small Package * Low VF ,low IR SOD-323 MECHANICAL DATA Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.004 grams .071 1.80 .063(1.60) .006(.15) |
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1ss357od-323mil-std-202e | |
diode marking 355
Abstract: 1SS355
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1ss355100voltsod-323diode marking 355 | |
1SS352Contextual Info: 1SS352 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS352 Ultra High Speed Switching Application Unit: mm Small package Low forward voltage : VF 3 = 0.98V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.5pF (typ.) |
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1ss352 | |
smd diode 5d
Abstract: 1SS355 MIL-STD-19 1SS355 355
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1ss355mil-std-750dmethod-1051method-1056+6 | |
1SS355
Abstract: J-STD-020D
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1ss355od-323j-std-020d2002/95/ec | |
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Contextual Info: TOSHIBA 1SS357 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 SS357 LO W VOLTAGE HIGH SPEED SWITCHING. Unit in mm Low Forward Voltage VF 3 = 0.54 (Typ.) Low Resistance Current I r = £>/“A (Max.) Small Package SC-70 il ¥ I 0 + 0 . 05 M A X IM U M RATINGS (Ta = 25°C) |
OCR Scan |
1ss357ss357sc-70 | |
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Contextual Info: 1SS355 SURFACE MOUNT SWITCHING DIODE VOLTAGE POWER 90 Volt 200 mW FEATURES • Small surgace mounting type SOD-323 0.078(1.95) 0.068(1.75) • High Speed (TRR=1.2ns Typ) • High reliability with surge current handing capability 0.014(0.35) 0.009(0.25) 0.054(1.35) |
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1ss355od-3232011/65/euiec61249+2 | |
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Contextual Info: 1SS357 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS357 Low Voltage High Speed Switching Unit in mm l Low forward voltage : VF 3 = 0.54V (typ.) l Low reverse current : IR = 5µA (max) l Small package : SC-70 Maximum Ratings (Ta = 25°C) Characteristic |
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1ss357sc-70 | |
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Contextual Info: TAK CHEONG 200mW SOD-323 SURFACE MOUNT DEVICE MARKING CODE: Device Device Type Marking 1SS355 S4 Small Outline Flat Lead Plastic Package High Speed Switching Diode Absolute Maximum Ratings Symbol PD TSTG TA = 25°C unless otherwise noted Parameter Power Dissipation |
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200mwod-3231ss355 | |
marking CODE S4 General Semiconductor
Abstract: General Semiconductor diode marking s4
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db-100marking code s4 general semiconductorgeneral semiconductor diode marking s4 | |
1SS355
Abstract: 80V 100ma SOD323
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od-3231ss355100ma80v 100ma sod323 | |
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Contextual Info: 1SS352 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS352 Ultra High Speed Switching Application Unit: mm l Small package l Low forward voltage : VF 3 = 0.98V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance : CT = 0.5pF (typ.) |
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1ss352100ma | |
smd k72 y5
Abstract: K72 y8 k72 y4 BAS70WT 46A gez SMBJ8.5CA SMBJ11CA SMD Marking K72 sk 75 dgm marking f5 sot-89
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1n4148w1n4148wx1n4148x1n4448w+16 | |
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Contextual Info: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 1SS357 Features • Halogen free available upon request by adding suffix "-HF" • High speed switching diode |
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1ss357od-323mil-std-202 | |
s31 schottky diode
Abstract: 1SS357 diode ct-25
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1ss357100mas31 schottky diodediode ct-25 | |
1SS356 MARKING
Abstract: 1SS356
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1ss356od-323100mhzmil-std-750+1 | |
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Contextual Info: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 1SS355 Features • • • • High speed switching diode Surface Mount For general purpose switching applications |
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1ss355od-323mil-std-202100ma+1 | |
1SS355
Abstract: diode SOD-323
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od-3231ss355100madiode sod-323 | |
device marking code S4
Abstract: DIODE marking S4 1SS355 PLASTIC SURFACE MOUNT DIODES marking s4 General Semiconductor diode
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1ss355200mwod-323device marking code s4+3 | |
LSS350Contextual Info: Ordering num ber: E N 3156A 7/ 1SS350 Silicon Epitaxial Schottky Barrier Diode SAmro i UHF Detector, Mixer Applications F e a tu re s •Small interterm inal capacitance C = 0.69pF typ . ■Low forward voltage (Vp = 0.23V max). • Very small-sized package permitting the lSS350-applied sets to be made small and slim. |
OCR Scan |
1ss350lss350-applied52595gid149mo+1 | |
1SS357Contextual Info: TOSHIBA 1SS357 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS357 LO W VOLTAGE HIGH SPEED SWITCHING. • Low Forward Voltage VF 3 = 0.54 (Typ.) • Low Resistance C urrent IR — • Small Package SC-70 (Max.) M A X IM U M RATINGS (Ta = 25°C) |
OCR Scan |
1ss357sc-70 | |
1SS352Contextual Info: 1SS352 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS352 Ultra High Speed Switching Application Unit: mm l Small package l Low forward voltage : VF 3 = 0.98V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance : CT = 0.5pF (typ.) |
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1ss352 | |
RB751V-40Contextual Info: WON-TOP ELECTRONICS Material Composition Declaration Package Information Package SOD-323 Product Group Type No. SD101AWS – SD101CWS RB751V-40 BAS70WS 1SS357 RB501V-40 MMDL101 MMBD717WS BAT42WS / BAT43WS BAT54HS / BAT54WS MMDL301 BAS40WS MMDL770 1SS404 |
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od-323sd101awssd101cwsrb751v-40+6 | |