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    E-Switch Inc ULV7F2GSS357

    Switch: vandal resistant; DPDT; ULV7; 3A/250VAC; IP67; ON-ON; 220V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME ULV7F2GSS357 100
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    Newark ULV7F2GSS357 Bulk 100
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    • 100 $18.97
    • 1000 $18.97
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    Toshiba America Electronic Components 1SS357(TH3KOITS,E)

    X34 PB-F USC SHOTTKY BARRIER DIODE (LF), IFM=200MA - Tape and Reel (Alt: 1SS357(TH3KOITS,E))
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 1SS357(TH3KOITS,E) Tape & Reel 24 Weeks 3,000
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    Toshiba America Electronic Components 1SS357(TPH3,F)

    - Tape and Reel (Alt: 1SS357(TPH3,F))
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    Avnet Americas 1SS357(TPH3,F) Tape & Reel 3,000
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    EBV Elektronik 1SS357(TPH3,F) 22 Weeks 3,000
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    UNICORP MSS357-1B-19

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bisco Industries MSS357-1B-19 504
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    Toshiba America Electronic Components 1SS357

    Surface mounting schottky Diode
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics 1SS357 2,992
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    Win Source Electronics 1SS357 195,549
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    SS357 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: TOSHIBA SS357 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 SS357 LO W VOLTAGE HIGH SPEED SWITCHING. Unit in mm Low Forward Voltage VF 3 = 0.54 (Typ.) Low Resistance Current I r = £>/“A (Max.) Small Package SC-70 il ¥ I 0 + 0 . 05 M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		1ss357ss357sc-70 PDF

    SS357

    Abstract: diode marking NZ
    Contextual Info: TOSHIBA SS357 TOSHIBA DIODE 1 SS357 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING. Low Forward Voltage Low Resistance Current Small Package VF 3 = 0.54 (Typ.) Ir = £>/“A (Max.) SC-70 il 0 + 0 . 05 M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		1ss357ss357sc-70diode marking nz PDF

    2N3637UB

    Abstract: JANKCA2N3637 2N3634 2N3634L 2N3634UB 2N3635 2N3635L 2N3637 2N3637L 2N3637 JAN
    Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 17 October 2010. MIL-PRF-19500/357L 17 July 2010 SUPERSEDING MIL-PRF-19500/357K 14 January 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, AMPLIFIER,


    Original     		mil-prf-19500/357lmil-prf-19500/357k2n36342n3637+82n3634ub2n3637ub2n3634l2n3637ljankca2n36372n36352n3635l2n3637 jan PDF

    2N3634

    Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 6 August 2013. MIL-PRF-19500/357M 6 May 2013 SUPERSEDING MIL-PRF-19500/357L 17 July 2010 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, AMPLIFIER,


    Original     		mil-prf-19500/357mmil-prf-19500/357l2n36342n3637+62n3634ub2n3637ub2n3634ubn2n3637ubn2n3634l2n3637l PDF