1N60 SCHOTTKY Search Results

1N60 diode

Abstract: diode 1n60 1N60 1N60 Schottky 1N60 diode resistance 1N60P Diode Equivalent 1N60
Contextual Info: 1N60/1N60P Schottky Barrier Diode Features 1. High reliability 2. Low reverse current and low forward voltage Applications Low current rectification and high speed switching Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter

1n60 diode

Abstract: 1n60 1N60P diode 1n60 1N60 Schottky DIODE 1n60p
Contextual Info: 1N60/1N60P Schottky Barrier Diode Features 1. High reliability 2. Low reverse current and low forward voltage Applications Low current rectification and high speed switching Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter

1N60 diode

Abstract: diode 1n60 1N60 1N60P 1N60P, DO-35
Contextual Info: 1N60 THRU 1N60P SMALL SIGNAL SCHOTTKY DIODE Reverse Voltage - 40 to 45 Volts Forward Current - 0.03 / 0.05 Ampere FEATURES DO-35 Metal-on-silicon junction, majority carrier conduction High current capability, Low forward voltage drop ● Extremely low reverse current Ir

SMALL SIGNAL SCHOTTKY DIODES DO-35

Abstract: 1N60 1N60P diode 1n60 1n60 diode 1N60 Schottky
Contextual Info: 1N60/1N60P Schottky Barrier Diodes SMALL SIGNAL SCHOTTKY DIODES 30m/50m AMPERES 40/45VOLTS P b Lead Pb -Free Features: * High Reliability * Low Reverse Current and Low Forward Voltage Applications: * Low Current Rectification and High Speed Switching Mechanical Data:

Contextual Info: 1N60 THRU 1N60P SMALLE SIGNAL SCHOTTKY RECTIFIERS DO-35 Metal-on-silicon junction,majority camier conduction High currentcapability,low forward voltage drop • Ultra speed switching characteristics Extremely low reverse current IR Satisfactory wave detecion efficiency

Contextual Info: 1N60/1N60P Schottky Barrier Diode Features 1. High reliability 2. Low reverse current and low forward voltage Applications Low current rectification and high speed switching Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter

1n60 diode

Abstract: diode 1n60 1N60 1N60 diode resistance 1N60P DIODE 1n60p 1N60P, DO-35
Contextual Info: 1N60/1N60P Schottky Barrier Diode Features 1. High reliability 2. Low reverse current and low forward voltage Applications Low current rectification and high speed switching Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter

1N60 diode

Abstract: diode 1n60 1N60 Diode Equivalent 1N60 1N60 diode resistance 1N60P
Contextual Info: FMS 1N60/1N60P Schottky Barrier Diode Features 1. High reliability 2. Low reverse current and low forward voltage Applications Low current rectification and high speed switching Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter

1N60P

Abstract: 1N60P, DO-35 1N60
Contextual Info: 1N60 THRU 1N60P SMALL SIGNAL SCHOTTKY DIODES Reverse Voltage - 40 to 45 Volts Forward Current - 0.03/0.05 Amperes FEATURES DO-35 GLASS Fast switching for high efficiency Low reverse leakage High forward surge current capability High temperature soldering guaranteed

SMALL SIGNAL SCHOTTKY DIODES DO-35

Abstract: 1N60P diode 1n60 1N60 diode 1N60P, DO-35 TC1N60 1N60 DO35 1N60 PACKAGE
Contextual Info: PRELIMINARY DATASHEET 500 mW DO-35 Hermetically Sealed Glass Small Signal Schottky Diodes AXIAL LEAD DO35 Absolute Maximum Ratings Symbol VRRM IF IFSM TSTG /TJ TA = 25°C unless otherwise noted Value Parameter Units DEVICE MARKING DIAGRAM 1N60 1N60P Peak Reverse Voltage

Contextual Info: Diodes SMD Type Surface Mount Schottky Barrier Diode 1N60 SOD-323 Features Unit: mm +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 +0.1 1.3-0.1 Low forward voltage drop. Guard ring construction for transient protection. Negligible reverse recovery time. +0.1

11n60p

Abstract: SMALL SIGNAL SCHOTTKY DIODES DO-35 1n60 DIODE 1n60p
Contextual Info: PRELIMINARY DATASHEET 500 mW DO-35 Hermetically Sealed Glass Small Signal Schottky Diodes AXIAL LEAD DO35 Absolute Maximum Ratings Symbol VRRM IF IFSM TSTG /TJ TA = 25°C unless otherwise noted Value Parameter Units DEVICE MARKING DIAGRAM 1N60 1N60P Peak Reverse Voltage

diode 1n60

Abstract: 1n60 diode 1N60P 1N60 Diode Equivalent 1N60 1N60 PACKAGE SMALL SIGNAL SCHOTTKY DIODES DO-35 TC1N60 DO35
Contextual Info: SEM IC O N DU C TO R 500 mW DO-35 Hermetically Sealed Glass Small Signal Schottky Diodes AXIAL LEAD DO35 Absolute Maximum Ratings Symbol VRRM IF IFSM TSTG /TJ TA = 25°C unless otherwise noted Value Parameter Units DEVICE MARKING DIAGRAM 1N60 1N60P Peak Reverse Voltage

1n60

Contextual Info: 1N60 Small Signal Schottky Diodes VOLTAGE RANGE: 40V CURRENT: 0.03 A Features DO - 35 GLASS Metal s illicon junction m ajority carrier conduction High current capability,low forward voltage drop Extrem ely low revers e current IR Ultra s peed s witching characteris tics

2N2222A mps

Abstract: 2N512AB 2n2222 mps 1N1096 1N589 1n4007 - 2n4001 2N698 SCR 1N233A 1N20461 2N3304
Contextual Info: ¿S c iscre:e devices ^ ! jemitronicr hot line TOLL FREE NUMBER 800-777-3960 alpha-numeric index Type 1N34A 1N35 1N36 1N38.A.B 1N40 1N42 1N44/ 1N51 1N52,A 1N54,A 1N55AB 1N56,A 1N57,A 1N58.A 1N60.A 1N61 1N62 1N63,A 1N65 1N66.A 1N67.A 1N68.A 1N69,A 1N70,A 1N71

1N283

Contextual Info: Germanium Diodes* DO-1 and DO-7 Cases TYPE NO. CASE vrrm 10 VF IF trr V (HlA) (V) (mA) (ns) MAX MAX MAX TECHNOLOGY MAX 1N34A DO-7 75 50 1.0 5.0 . POINT CONTACT 1N60 DO-7 100 50 1.0 5.0 — GOLD BONDED 1N67A DO-7 90 50 1.0 5.0 . POINT CONTACT 1N87A

Contextual Info: Germanium Diodes* DO-1 and DO-7 Cases DO-1 TYPE NO. CASI DO-7 TECHNOLOGY Vr r m 10 VF @ if trr V (mA) (V) (mA) (ns) MAX MAX MAX MAX 1N34A DO-7 75 50 1.0 5.0 . POINT CONTACT 1N60 DO-7 100 50 1.0 5.0 . GOLD BONDED 50 1.0 5.0 . POINT CONTACT POINT CONTACT

1N93

Abstract: 1N283 1N34A 1N276
Contextual Info: Germanium Diodes* DO-1 and DO-7 Cases DO-1 TYPE WO, CASE DO-7 io VF »F trr 00 mA (Vi (mA) (n*) MAX MAX MAX vrrm TECHNOLOGY MAX 1N34A DO-7 75 50 1.0 5.0 — POINT CONTACT 1N60 DO-7 100 50 1.0 5.0 . GOLD BONDED 1N67A DO-7 90 50 1.0 5.0 . POINT CONTACT

1N295

Abstract: diodes 1N34A 1N91 diode 1N34A DO-7 1N93 1N91 1N92 1n270 1N4502
Contextual Info: Germanium Diodes* DO-1 and DO-7 Cases DO-7 DO-1 TYPE NO. CASE TECHNOLOGY VRftM io VF @ if trr V (mA) (V) (mA) (ns) MAX MAX MAX MAX 1N34A DO-7 75 50 1.0 5.0 . POINT CONTACT GOLD BONDED POINT CONTACT 1N60 DO-7 100 50 1.0 5.0 . 1N67A DO-7 90 50 1.0 5.0

1N91 DATASHEET

Abstract: DO-7 1N34A Diode Equivalent 1N34A 1N92 1N91 1N91 diode 1N270 1N295 1N60
Contextual Info: Germanium Diodes DO-1 and DO-7 Cases DO-1 TYPE NO. CASE 1N34A 1N60 1N67A 1N87A 1N91 1N92 1N93 1N100A 1N191 1N192 1N270 1N276 1N277 1N283 1N295 1N3666 1N4502 CN695 CN695A DO-7 DO-7 DO-7 DO-7 DO-1 DO-1 DO-1 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7

1n60

Abstract: 1N60P 1N60 Schottky
Contextual Info: MCC 1N60 1N60P
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • High Reliability Low Reverse Current and Low Forward Voltage Schottky Barrier Rectifier Maximum Ratings • DO-35

Contextual Info: MCC TM Micro Commercial Components 1N60 1N60P
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • High Reliability Low Reverse Current and Low Forward Voltage Marking : Cathode band and type number

1N60P

Contextual Info: MCC TM Micro Commercial Components 1N60 1N60P
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • High Reliability Low Reverse Current and Low Forward Voltage Marking : Cathode band and type number

Contextual Info: MCC TM Micro Commercial Components 1N60 1N60P
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • High Reliability Low Reverse Current and Low Forward Voltage Marking : Cathode band and type number