1N5625 SPECIFICATIONS Search Results

Contextual Info: 1N5624, 1N5625, 1N5626, 1N5627 www.vishay.com Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Controlled avalanche characteristics • Low reverse current • High surge current loading

DIODE 1N5625 V

Abstract: vishay 1N5625 DIODE 1N5625 1N5625 diode 1N5625 1N5625 Specifications 1N5626
Contextual Info: 1N5624, 1N5625, 1N5626, 1N5627 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Controlled avalanche characteristics • Low reverse current • High surge current loading

1N5625

Abstract: 1N5625 diode diode 1n5624 vishay 1N5625 1N5626
Contextual Info: 1N5624, 1N5625, 1N5626, 1N5627 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Controlled avalanche characteristics • Low reverse current • High surge current loading

1N5624

Abstract: 1N5625 1N5626 1N5627 BYW82 BYW83 BYW84 BYW85 BYW86
Contextual Info: BYW82.BYW86 TELEFUNKEN Semiconductors Silicon Mesa Rectifiers Features D Glass passivated junction D Hermetically sealed package D Controlled avalanche characteristics D Low reverse current D High surge current loading D Electrically equivalent diodes: BYW82 – 1N5624 BYW83 – 1N5625

diode 1n5624

Abstract: 1N5624 1N5625 1N5626 1N5627 BYW82 BYW83 BYW84 BYW85 BYW86
Contextual Info: BYW82.BYW86 Silicon Mesa Rectifiers Features D D D D D D Glass passivated junction Hermetically sealed package Controlled avalanche characteristics Low reverse current High surge current loading Electrically equivalent diodes: BYW82 – 1N5624 BYW83 – 1N5625

BYW86

Abstract: DIODE 1N5625 V 1N5624 1N5625 1N5626 1N5627 BYW82 BYW83 BYW84 BYW85
Contextual Info: BYW82.BYW86 Vishay Telefunken Silicon Mesa Rectifiers Features D D D D D D Glass passivated junction Hermetically sealed package Controlled avalanche characteristics Low reverse current High surge current loading Electrically equivalent diodes: BYW82 – 1N5624 BYW83 – 1N5625

1N5624

Abstract: diode 1n5624 1N5625 1N5625 v 1N5626 DIODE 1N5625 V 1N5627
Contextual Info: HARRIS SENICON] S E CT OR i l i H a <è 3 semiconductor böE r r i s D H 43 GS 27 1 D05 0 3D 5 123 H H A S 1 N 5 6 2 4 , 1 N 5 6 2 5 j N 5 6 2 6 , 1 N 5 6 2 7 3A, 200V - 800V Diodes December 1993 Features Package AL-3 TOP VIEW • High Temperature Metallurgically Bbonded, No Com­

1N5625

Abstract: 1n5627
Contextual Info: 1N5624 thru 1N5627 Vishay Semiconductors Glass Passivated Junction Rectifier Features • Cavity-free glass passivated junction • High temperature metallurgically bonded construction • Hermetically sealed package • Capable of meeting environmental standards of

1N5625

Abstract: 1N5624
Contextual Info: 1N5624 thru 1N5627 Vishay Semiconductors Glass Passivated Junction Rectifier Features • Cavity-free glass passivated junction • High temperature metallurgically bonded construction • Hermetically sealed package • Capable of meeting environmental standards of

A15D

Abstract: 1N5625 A14F DT230 ge a15a 1n5626 jantx 1N5627 JANTX 1n5626 1N5624
Contextual Info: R ECTIFIERS rHE INDUSTRY’S BROADEST LINE OF POWER RECTIFIERS— .250 TO 1500 AMPERES, UP TO 3000 VOLTS • CURRENT/VOLTAGE RATINGS ■ PACKAGING ■ MOUNTING AND COOLING ■ HIGH-SPEED FAST RECOVERY ■ TRANSIENT SELF-PROTECTION ■ GENERAL PURPOSE RECTIFIERS

A114F

Abstract: A114A A114N A114F GE A114B MPR12 MPR15 GER4007 DT230B ge a114d
Contextual Info: SILICON RECTIFIERS LOW CURRENT .25 TO 3 AMPERES JEDEC GE TYPE _ — — DT230 MPR10-15 A14A-P t N5059 62 1N4245-49 — -GER4001 -7 1N5624-27 — — fil !iA-N ELECTRICAL SPECIFICATIONS A @ V r M ( r e p ) - I fM ¡surge) T a {° C ) .25 .5 SO 100 —

DIODE 1N5625 V

Abstract: diode 1n5624 Sinterglass 1N5625 Specifications 1N5624 1N5625 1N5626 1N5627 vishay 1N5625
Contextual Info: 1N5624 to 1N5627 Vishay Semiconductors Standard Avalanche Sinterglass Diode Features • • • • Glass passivated junction Hermetically sealed package Controlled avalanche characteristics Low reverse current e2 949588 • High surge current loading • Lead Pb -free component

Contextual Info: 1N5624 to 1N5627 Vishay Semiconductors Standard Avalanche Sinterglass Diode Features • • • • Glass passivated junction Hermetically sealed package Controlled avalanche characteristics Low reverse current e2 949588 • High surge current loading • Lead Pb -free component

1n5624

Contextual Info: 1N5624 THRU 1N5627 GLASS PASSIVATED SILICON RECTIFIER Voltage - 200 to 800 Volts Current - 3.0 Amperes FEATURES ♦ Glass passivated cavity-free junction ♦ High temperaturae metallurgical^ bonded con­ structed rectifiers ♦ Hermetically sealed package

diode 1n5624

Abstract: vishay 1N5625 9563 1N5624 1N5625 1N5626 1N5627
Contextual Info: 1N5624.1N5627 Vishay Telefunken Silicon Mesa Rectifiers Features D D D D D Glass passivated junction Hermetically sealed package Controlled avalanche characteristics Low reverse current High surge current loading Applications 94 9588 Rectifier, general purpose

Contextual Info: 1N5624.1N5627 Vishay Semiconductors Silicon Mesa Rectifiers Features D D D D D Glass passivated junction Hermetically sealed package Controlled avalanche characteristics Low reverse current High surge current loading Applications 94 9588 Rectifier, general purpose

1N6122A JANTX

Abstract: 1N6121 1N6116A JANTX JANTX1N5626 JANTX 1N4246 JANTX 1N5811 JAN 1N5811 1N5416 JANTX JANTX 1N647-1 "general instrument 1n4946
Contextual Info: GENERAL INSTRUMENT # 1 IN PRICE, # 1 IN SERVICE, # 1 IN MILITARY General Instrument Power Semiconductor Division , is the world’s largest manufacturer of rectifiers and bridges, supplying over 2 billion annually. We’re proud to be number one in quality and reliability as we are

A114B

Abstract: A114D A114M A114C ge a114d ge A114B A114E A14F DT230 A114-B
Contextual Info: R E C T IF IE R S rHE INDUSTRY’S BROADEST LINE OF POWER RECTIFIERS— .250 TO 1500 AMPERES, UP TO 3000 VOLTS • CURRENT/VOLTAGE RATINGS ■ PACKAGING ■ MOUNTING AND COOLING ■ HIGH-SPEED FAST RECOVERY ■ TRANSIENT SELF-PROTECTION ■ GENERAL PURPOSE

A114D

Abstract: A114F SE708 DT230B DT230F STB-568 GER4007 a114n DZ800 MA1703
Contextual Info: SILICON S IG N A L DIODES 100 M A T Y P E S Continued U BV @ 100//A Part Number (V) (nA) MA1703 40 50 MA1704 25 Vf @ 25°C Max. M ax. @ V r (V) 30 20 100 Co @ lF(mA) (V) 50 1 .00 30 1.00 Package O utline No. S p e cificatio n Sh eet No. @ OV trr (pif) (nsec)

diode A14A

Abstract: diode A14A surface mount LN5061 A14P Rectifier A14P A14B LN5060 A14F DT230 A14D 1n5060
Contextual Info: R ECTIFIERS rHE INDUSTRY’S BROADEST LINE OF POWER RECTIFIERS— .250 TO 1500 AMPERES, UP TO 3000 VOLTS • CURRENT/VOLTAGE RATINGS ■ PACKAGING ■ MOUNTING AND COOLING ■ HIGH-SPEED FAST RECOVERY ■ TRANSIENT SELF-PROTECTION ■ GENERAL PURPOSE RECTIFIERS

BT136-600E equivalent

Abstract: D2499 equivalent D1878 equivalent BT139-600 equivalent C4927 d1577 d1554 C5386 c5129 e13005 equivalent
Contextual Info: “Philips Type” refers to closest Philips alternative or equivalent if available. Always consider the application and compare data specifications before recommending the suitable Philips type. Notes: 1 - dual device. 2 - competitor RDS on falls between two Philips types, hence either stated device may be suitable.

EQUIVALENT BYD33D

Abstract: 1n5062 equivalent SUF5402 diode cross reference BYS21-45 BYS21-45 1N4007 general instruments BY255 itt da3/1000 1N6644 FR207 equivalent
Contextual Info: DISCRETE SEMICONDUCTORS Cross reference guide Power Diodes 1998 Dec 07 Philips Semiconductors Power Diodes Cross reference guide “Philips Type” refers to closest Philips alternative or direct equivalent if available. Always consider the application and

BA159 equivalent

Abstract: B80C1500-1000 BYS26-45 equivalent sb5100 B380C2000/1500 1N5048 BYX55-350 BYS21-45 BYX55-600 SMB358
Contextual Info: Typen - Vergleichsliste Typ Diotec 1A01/G 1A02/G 1A03/G 1A04/G 1A05/G 1A06/G 1N5059 1N5059 1N5059 1N5060 1N5061 1N5062 6A05/G 6A10/G 6A20/G 6A40/G 6A60/G 6A80/G 6A100/G Fam. R R R R R R P600A P600B P600D P600G P600J P600K P600M R R R R R R R 1B005 1B01 1B02

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.