1N5461 Search Results

variable capacitors

Abstract: Codi Semiconductor 1N5476 177SM7D K300 1N5461 1N5462 1N5463 1N5464 1N5465
Contextual Info: 1775470 C O D I S E M ICONDUCTOR llil INC 90 D 0 0 5 8 7 ¿ F |].7 7S 4 7a Daoasfl7 4 , CODI Semiconductor Inc. HIGH Q V O LTA G E V A R IA B L E CAPACITO R S 1N5461 thru 1N5476 IT HIGH Q - up to 6 0 0 VOLTAGE VARIABLE CAPACITORS for UHF tuning applications

minor project proposal on electronics

Abstract: 436 diode MIL-S-19500/436 1N5466B JANTXV diode LN 4001 1N5476B 1N5461B 1N5461C 1N5462C 1N5463C
Contextual Info: MIL SPECS IC | D D D D i a S DQiattt. 4 | MIL-S-19500/436 USAF AMENDMENT 5 9 JANUARY 1984 suPEmunra- AMENDMENT 4 13 July 1972 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-VARIABLE CAPACITOR TYPES 1N5461B THRU 1N5476B AND 1N5461C THRU 1N5476C

Contextual Info: 1N54391N5476 1N5681 1N5710 Varactor Diodes 1N5439 to 1N5476 and 1N5681 to 1N5710 Type Number 1N5439 1N5440 1N5441 1N5442 1N5443 1N5444 1N5445 1N5446 1N5447 1N5448 1N5449 1N5450 1N5451 1N5452 1N5453 1N5454 A A A A A A A A A A A A A A A 1N5455 1N5456 1N5461

1N5449

Contextual Info: K n o x S e m ic o n d u c t o r , I n c GENERAL PURPOSE ABRUPT VARACTOR DIODES 1N5441 TO 1N5476 TYPE NUMBER 1N5441 1N5442 1N5443 1N5444 1N5445 1N5446 1N5447 1N5448 1N5449 1N5450 1N5451 1N5452 1N5453 1N5454 1N5455 1N5456 ♦ 1N5461 ♦ 1N5462 ♦ 1N5463 ♦ 1N5464

1n54j

Abstract: 1N5441 1N5461 1N5476 1n54j9 1N5440 1N5439 1N5442 1N5443 1N5444
Contextual Info: "F ¿7-/9 4TE D ^ooaaTö 00000^3 ö ?t • 1N5439 iseh In tern atio n al i n t e r n a tional Semiconductor, In c - thru semicond 1N5456 1N5461 thru H IG H Q - VOLTAGE VARIABLE CAPACITORS 1N5476 MINIMUM QUALITY TUNING RATIO a t V r = 4 Vdc FACTOR 2 V to 3 0 V

Contextual Info: MSI ELECTRONICS INC 3SE £ E3 5b5bMbb 000036b T E M S I T - 0 7 -/7 - HERMETICALLY SEALED GL AS S PACKAGED TUNING DIODES 08 D S D elect ABRUPT - HYPERABRU PT U E L E C T R IC A L C H A R A C T E R IS T IC S T a = 2 5 ° C unless otherwise noted GENERAL APPLICATIONS

v2308

Abstract: EP1014 V2205
Contextual Info: TABLE OF CONTENTS GLASS PACKAGED HERMETICALLY SEALED Suffix Letter Indicates Capacitance Tolerance SLIGHT HYPERABRUPT AB R U PT Page No. 1 N 9 5 1 - 1 N 9 5 6 . 1N4786 -1 N 4 8 1 5 A , B .

1N5462

Abstract: varactor diode 1N5469 1N5449 1N5448 1N5441 to 1N5476 datasheet 1N5441 1N5442 1N5443 1N5444 1N5445
Contextual Info: KNOX SEMICONDUCTOR, INC. GENERAL PURPOSE ABRUPT VARACTOR DIODES 1N5441 TO 1N5476 TYPE NUMBER CAPACITANCE @ - 4 Vdc • 1 MHz pF 6.8 8.2 10.0 12.0 15.0 18.0 20.0 22.0 27.0 33.0 39.0 47.0 56.0 68.0 82.0 100.0 1N5441 1N5442 1N5443 1N5444 1N5445 1N5446 1N5447

IN5717

Abstract: IN5718 IN5714 7C3 diode IN5421
Contextual Info: VARACTOR SELECTOR GUIDE Series Capacitance 1-IOOpf >100pf Max Working Voltage Q 7-50 50-150 >150 10-50 50-100 >100 Leakage Current low Cost Comments <10nA <1.0M* Replaces M V830-M V840 DO-7 G lass CV830CV840 X CV1006-16CV1106-16 X X CV1620CV1650 X X X X X

IN5142

Abstract: IN5142A MVAM106 1N5472A MV104g Motorola 1N547 MVAM115 1N5470A 226AA TO226AA
Contextual Info: TUNING, HOT CARRIER, AND PIN DIODES Motorola’s RF diodes are designed for electronic tuning, mixing, and switching high frequency signals. These diodes are available in the hermetic D 0 -2 0 4 A A DO-7 and low cost TO-226AA (TO-92) packages. Tuning Diodes

teledyne crystalonics

Abstract: VA-212 MC-150 1N4786
Contextual Info: VARACTOR SELECTOR GUIDE Series Capacitance 1-IOOpf >100pf Max Working Voltage Q 7-50 50-150 >150 10-50 50-100 >100 Leakage Current low Cost Comments <10nA <1.0M* Replaces MV830-MV840 DO-7 G lass CV830CV840 X CV1006-16CV1106-16 X X CV1620CV1650 X X X X X Replaces MV1620-MV1650

CV1664

Abstract: DO-14 diode VA51 VA521
Contextual Info: VARACTOR SELECTO R GUIDE Series Capacitance 1-IOOpf >100pf Max Working Voltage Q 7-50 50-150 >150 10-50 50-100 >100 Leakage Current low Cost Comments <10nA <1.0M* Replaces M V830-M V840 DO-7 G lass CV830CV840 X CV1006-16CV1106-16 X X CV1620CV1650 X X X X X

FV1106-FV1116

Abstract: c60 c4
Contextual Info: VARACTOR SELECTOR GUIDE Series Capacitance 1-IOOpf >100pf Max Working Voltage Q 7-50 50-150 >150 10-50 50-100 >100 Leakage Current low Cost Comments <10nA <1.0M* Replaces MV830-MV840 DO-7 Glass CV830CV840 X CV1006-16CV1106-16 X X CV1620CV1650 X X X X X Replaces MV1620-MV1650

1N5718

Contextual Info: VARACTOR SELECTO R GUIDE Series Capacitance 1-IOOpf > 100pf Max Working Voltage Q 7-50 50-150 >150 10-50 50-100 >100 Leakage Current low Cost Comments <10nA < 1 .0M* Replaces MV830-MV840 DO-7 G lass CV830CV840 X C V1006-16CV1106-16 X X CV1620CV1650 X X X X

MSPD2018

Abstract: MZBD-9161 ZENER 15B1 msd700 package inductance MSPD2018-H50 B20 zener diode glass MPN7320 MZBD9161 MLP7121 15B1 zener diode
Contextual Info: Aeroflex / Metelics, Inc. Microwave Diodes & Passive Semiconductor Devices Microwave Diodes & Passive Semiconductor Devices Aeroflex / Metelics, Inc. Aeroflex / Metelics, Inc. East Coast Operations 54 Grenier Field Road, Londonderry, NH 03053 Tel: 603 641-3800

A-29 diode

Abstract: Voltage Variable Capacitance Diodes 1N5450A 1N5470A 1N5472A MV1650 N5447A 1N5441A 1N5140 1N5141
Contextual Info: 6367255 MOTOROLA SC P I O D E S /O P T O ÖT 89D 77450 DE |h3t,7SSS □077'4SD fi *T " 0 7 ~ /? General Purpose Abrupt Junction Tuning Diodes Voltage variable capacitance diodes for electronic tuning and control of RF circuits through UHF frequencies. Utilized

1N5438

Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and

Contextual Info: I n t e r n a t io n a l S e m ic o n d u c t o r , I n c . 1N5458 VOLTAGE VARIABLE CAPACITORS thru V E R Y HIGH Q, LOW VOLTAGE, LOW L EA K A G E 3.9 TO 100 PF 1N5476C ELECTRICAL CHARACTERISTICS f CHARACTERISTICS - ALL TYPES T„ = 25 °C unless otherwise specified

IN5139

Abstract: va5142 1N950
Contextual Info: VARACTOR SELECTOR GUIDE Series Capacitance 1-IOOpf CV830CV840 >100pf X Max Working Voltage Q 7-50 50-150 >150 X 10-50 50-100 >100 Leakage Current low Cost Comments <10nA <1.0M* X X X Replaces FV1006-16, FV1106-16 DO-7 Glass C V 1 0 0 6 -1 6 - X X Replaces MV830-MV840

CV1620

Contextual Info: VARACTOR SELECTOR GUIDE Series Capacitance 1-IOOpf >100pf Max Working Voltage Q 7-50 50-150 >150 10-50 50-100 >100 Leakage Current low Cost Comments <10nA <1.0M* Replaces MV830-MV840 DO-7 Glass CV830CV840 X C V1006-16CV1106-16 X X CV1620CV1650 X X X X X Replaces MV1620-MV1650

varactor

Abstract: 1N3182 1N5138 1N3947 1N5136 K511 vc299 vc99 MIL-S-19500 1n3945
Contextual Info: Table of Contents ZENER DIODES Page K 1 2 0 -K 5 1 0 K511 - K681 1N4678 - 1N4714 1 N 4 6 1 4 - 1N4627 1N4099 - 1N4121 1N5518 - 1N5546 1N6082 - 1N6091 KZ43A - KZ100A KZ343A - KZ3100A KZ450 - KZ498 CURRENT REGULATOR AND VARACTOR DIODES Page 9 9 9 10 10 11 11

1N5443

Abstract: 1N5448
Contextual Info: K n o x S e m ic o n d u c t o r , I n c . GENERAL PURPOSE ABRUPT VARACTOR DIODES 1N5441 TO 1N5476 TYPE NU M BER CAPACITANCE @ - 4 Vdc • 1 MHz pF TU N IN G RATIO C*2 V / C-30V MIN MAX M IN Q UALITY FACTOR Q @ - 4 Vdc f = 50 M Hz 1N5441 1N5442 6.8 8.2 2.5

JE1100

Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices