1N4447 DIODE Search Results

1N4149

Abstract: 1N4151 1N4152 1N4153 1N4447 1N4449 1N4454 1N914 1N44471
Contextual Info: 1N914.1N4454 SILICON EPITAXIAL PLANAR DIODES for general purpose and switching The types 1N4149, 1N4447 and 1N4449 are also available in glass case DO-34. Peak reverse voltage Max. aver. rectified current Max. power dissip. at 25℃ Max. junction temperature

1N4447

Contextual Info: 1N4149, 1N4151, 1N4154 1N4446, 1N4447, 1N4448 1N4449 COMPUTER DIODE Switching FEATURES • Metallurgical Bond • Planar Passivated • DO-35 DESCRIPTION This series offers Metallurgical Bonding and is very popular for general purpose switching applications.

1N4447

Abstract: DO-204AH
Contextual Info: Certificate TH97/10561QM 1N4447 Certificate TW00/17276EM HIGH SPEED SWITCHING DIODE DO - 35 Glass DO-204AH FEATURES : • High switching speed: max. 4 ns • Reverse voltage:max. 75V • Peak reverse voltage:max. 100 V • Pb / RoHS Free 1.00 (25.4) min.

1N4149

Abstract: 1N4150 1N4152 1N4153 1N4447 1N4449 1N4454 1N914
Contextual Info: CE 1N914 THRU 1N4454 CHENYI ELECTRONICS SMALL SIGNAL SWITCHING DIODE FEATURES . Silicon epitaxial planar diode . Fast swithching diodes . 1N4149, 1N4447, 1N4449 are also avaible in glass case DO-34 MECHANICAL DATA . Case: DO-35 glass case . Polarity: Color brand denotes cathode end

1n4149

Abstract: 1N4153 silicon diodes 1N4151 1N4152 1N4153 1N4447 1N4449 1N4454 1N914
Contextual Info: 1N914.1N4454 SILICON EPITAXIAL PLANAR DIODES for general purpose and switching The types 1N4149, 1N4447 and 1N4449 are also available in glass case DO-34. Peak reverse voltage Max. aver. rectified current Max. power dissip. at 25℃ Max. junction temperature

Contextual Info: 1N4447 HIGH SPEED SWITCHING DIODE DO - 35 Glass DO-204AH FEATURES : • • • • High switching speed: max. 4 ns Reverse voltage:max. 75V Peak reverse voltage:max. 100 V Pb / RoHS Free 1.00 (25.4) min. 0.079(2.0 )max. 0.150 (3.8) max. Cathode Mark 1.00 (25.4)

IN4154

Abstract: in4447 IN4448 in4151 1N4149 diode 1n4446 1N4447 1N4446 1N444B Diode 1n4149
Contextual Info: COMPUTER DIODE Switching 1N4149, 1N4151, 1N4154 1N4446, 1N4447, 1N4448 1N4449 FEATURES • M etallurgical Bond • Planar Passivated • DO-35 DESCRIPTION This series offers M etallurgical Bonding and is very popular fo r general purpose sw itching applications.

IN4149

Abstract: IN4154 DIODe IN4446 1N4446 in4448 4N* diode 1N4447 LN4149 1N4154 1N4149
Contextual Info: 1N4149, 1N4151, 1N4154 1N4446, 1N4447, 1N4448 1N4449 COMPUTER DIODE Switching FEATURES • M e ta llu rg ic a l Bond • Planar Passivated • DO-35 DESCRIPTION This se rie s o ffe rs M e ta llu rg ic a l B onding and Is very pop u lar fo r general purpose

1N4149

Abstract: 1N4150 1N4152 1N4153 1N4154 1N4447 1N4449 1N4454 1N914 ts65
Contextual Info: 1N914 THRU 1N4454 SILICON EPITAXIAL PLANAR DIODES Features Silicon Epitaxial Planar Diodes for general purpose and switching The types 1N4149, 1N4447 and 1N4449 are also available in glass case DO-34. D IM E N S IO N S D IM in c h e s M ax. M in . M ax. -

1N4548

Abstract: 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428
Contextual Info: Discrete POWER & Signal Technologies Diode Cross-Reference Guide Industry Part Number 1N100 1N100A 1N101 1N102 1N103 1N104 1N108 1N111 1N112 1N113 1N114 1N115 1N116 1N116A 1N117 1N1170 1N117A 1N118 1N118A 1N119 1N120 1N126 1N126A 1N127 1N127A 1N128 1N128A

1N4447

Contextual Info: TYPES 1N4148. 1N4149, IN U M i : ^ 4 i9 SILICON SWITCHING DIODES B U L L E T IN NO. D L-S 739269, O C T O B E R 1 9 6 6 - R E V I S E D M A R C H 1973 FA ST S W IT C H IN G D IO D E S • Rugged Double-Plug Construction Electrical Equivalents: 1N4148 . . . 1N914 . .

FD100

Abstract: 1N408 FD600 N4376 1N4148 JANTX 1n4376 equivalent 1N5317 1N916B 1N4086 1n916 equivalent
Contextual Info: DIODES COMPUTER DIODES BY ASCENDING t R R GLASS PACKAGE *RR Bv C Package If pF Equivalent mA MAX Package .75 0.8 DO-7 DO-7 VF ns VOLTS nA •r @ TYPE M AX MIN MAX @ FD700 0.70 30 50 @ 15 1N4244 0.75 20 100 @ 1 N4376 0.75 20 100 1N4376 JAN 0.75 20 FD777

Contextual Info: •zSe.mi-Conducto'i tPioduati, fine. TELEPHONE: 973 376-2922 (212) 227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. FAX: (973) 376-8960 1N914THRU 1N4454 SILICON EPITAXIAL PLANAR DIODES Features DO-35 Silicon Epitaxial Planar Diodes for general purpose and switching

tnd903

Abstract: Allegro MicroSystems tnd 903 diode
Contextual Info: ALLEGRO MICROSYSTEMS INC 0S0433Ö OODbMDG QS3 • ALCR SERIES TND 'T - ^ V Z ^ f m DIODE ARRAYS The TND series consists of diode arrays packaged in 14-pin and 16-pin dual in-line plastic packages for easy automatic insertion and better printed circuit board density.

Contextual Info: $ 4 # — K /D iodes IN S e rie s • JEDEC 1N Series 1 -K Switching Diodes JEDEC Standards • [2/Dimensions Unit : mm JED EC « fè&LLZ, £<7>1N v ' J - X f c t l i t l , T Î S ^ Î - Î '< 7 ) T '^ W < tc è^ \ 1N Series conforming to JEDEC Standards are also available so that

ND921

Abstract: br 903
Contextual Info: SERIES TND D IO D E ARRAYS The TND series consists of diode arrays packaged in 14-pin and 16-pin dual in-line plastic packages for easy autom atic insertion and better printed circuit board density. In addition to the diode characteristics for standard products

Contextual Info: Silicon Diodes DO-35 Case p Switching Diodes TYPE NO. Vrrm VF @ If trr Ct V •o (mA) (V) (mA) (ns) (pF) MAX MAX MAX 1N914 100 150 1.0 10 4.0 4.0 1N914B 100 150 1.0 100 4.0 4.0 1N3062 75 75 1.0 20 2.0 1.0 1N3063 75 75 0.85 10 4.0 2.0 1N3064 75 75 1.0 10

1N4244

Abstract: FD700 1N4305 1N4446 1N4447 1N4448 1N4454 1N5282 FD777 FDH600
Contextual Info: Switching Diodes Computer Diodes Device No. Package No. Glass Package (continued) ^R R M 'r (V) (nA) VF @ v R (V) (V) @ 'f (mA) c ‘ rr <pF) (ns) Test Cond. Process No. Max Max 1 20 0.8 0.75 (Note 1) 1S 0.575 0.65 0.71 0.85 0.25 1 2 10 2 2 4 (Note 2) (Note 1)

4446

Abstract: diode 4148
Contextual Info: A C T IV E C O M P O N EN TS F O R H Y B R ID C IR C U IT S C O M PO SAN TS A C T IF S P O U R C IR C U IT S H Y B R ID E S Silicon signal diodes, general purpose chips Diodes de signa! au silicium, usage généra! (pastilles) Type Type VR (V) 'f (mA) 'fm

diode t 4148

Abstract: t 4148 diode din 4148 diode din 4148 IN4448 T 4148 diode IN 4148 din 4448 diode IN4448 4148 t
Contextual Info: «m » 'W 1N 4148 O • 1N 4149 -1N 4446 0 1N 4447 • 1N 4448 O • 1N 4449 Silizium-Epitaxial-Planar-Dioden Silicon epitaxial planar diodes Anwendungen: Extrem schnelle Schalter Applications: Extrem fast switches Die elektrischen Daten entsprechen den Dioden:

FD700

Abstract: DO-35 1N4151 1N4152 1N4153 1N4154 1N4305 1N4376 1N5282 BAY71
Contextual Info: FAIRCHILD DIODES DIODES COMPUTER DIODES BY ASCENDING trr GLASS PACKAGE DEVICE NO. trr ns Max BV V Min 1 FD700 0.70 30 2 1N4376 0.75 20 3 BAY82 0.75 15 100 12 1.0 4 FD777 0.75 15 100 8.0 1.0 5 1N5282 2.0 80 100 55 1.3 Item Vr V Vf V Max 50 20 1.1 100 10 1.1

d918

Abstract: D938 TND903 TND907
Contextual Info: SERIES TND D IO D E ARRAYS The TND series consists of diode arrays packaged in 14-pin and 16-pin dual in-line plastic packages for easy automatic insertion and better printed circuit board density. In addition to the diode characteristics for standard products

Contextual Info: SWITCHING DIODES 200mW Part# Peak Voltage Continous Reverse Current VI B V 1N914 1N914A 1N914B I r <"A> 100 100 100 @ Forward Voltage VR (V) 5000 @ 5000 @ 5000 @ Capacitance C Maximum Reverse Recovery Time VF (V) @ lF (mA) <PF) V (n S ) 1.0 1.0 1.0 @ @ @

1N4376

Abstract: BAX13 BAY71 1N4244 1N4305 1N4446 1N4447 1N4448 1N4449 1N4450
Contextual Info: Diode Data NATL S E MI CO ND HE DISCRETE Computer Diodes Glass Package D e v ic e N o. Package N o. Vrrm V M in ,R nA M ax D | tSGil30 003fc.clcH „ (continued) VF v Vd " M in M T - 0 1 - 0 1 @ M ax c *IT mA pF M ax ns M ax If Teat C ond. P ro c. N o.