1K X4 STATIC RAM Search Results

DM85

Contextual Info: TTL l/O-MOS Static RAM Selection Guide Pins Access Time Temperature Range TS 16 50 — 55°C to + 125°C TS 16 30 — 55°C to + 1 25°C 1 6 x4 TS 16 35 0”C to +70°C DM74S189A 16x4 TS 16 25 0°C to + 70°C DM74S289 16 x4 OC 16 35 0°Cto + 70”C 93L415A

KM424C256Z

Abstract: SIMM 30-pin 30-pin SIMM RAM KM41C256P KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8"
Contextual Info: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Number Capacity Organization Speed ns Technology Features Packages Remark 64K bit KM4164BP 100/120/150 NMOS Page Mode 16 Pin DIP Now 256K bit KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J

256X4

Abstract: 1024x4 AM2168 Am91L22
Contextual Info: MOS Memory MOS Memory Functional Index and Selection Guide 1K STATIC RAMS Part Number Am 9122-25 A m 9122-35 Am91L22-35 Am91 L22-45 Am9122-60 Organization 256 x 4 256 x 4 256 x 4 256x4 256 x 4 Acceee Tlme ns 25 35 36 45 60 Power DMpation(mW ) Standby - Active

88516b

Abstract: mb88515b MB88511 MB88411 88202-P BB413 MB88201 256X4 MB88515B-P-SH MB88541-PF
Contextual Info: FUJITSU MIC ROE LE CT RON IC S ^71 D • 374^7^2 0004570 0 « Fi ll T-90-60 April 1988 Edition 3.0 4-Bit Microcontrollers and Peripherals Table 1: FU JIT SU 4-BIT MCU F A M IL Y Process/ Series NMOS MB 8840 Series CMOS MB 8850/H MB 8850B Series CMOS MB 88200/H

Contextual Info: Integrated D evice Technology, Inc. HIGH-SPEED BiCMOS ECL STATIC RAM 4K 1Kx 4-BIT SRAM PRELIMINARY IDT10A474 IDT100A474 IDT101A474 FEATURES: DESCRIPTION: • • • • • • • • T h e ID T 1 0 A 4 7 4 , ID T 1 0 0 A 4 7 4 and 1 0 1 A 4 7 4 are 4 ,0 96-bit

Marvell 88e6065

Abstract: 88e6065 88e6035 link street marvell 88e6065 MARVELL CONFIDENTIAL, under NDA 88E6035 Marvell 88E6031 88E6061 Marvell+88e6065 Marvell PHY register map
Contextual Info: gh t, pa ct t, Im pa ct 1k3md8dxmnckz-etgax43r * Memec Headquarters - Unique Tech, Insight, Impact * UNDER NDA# 12101050 Doc. No. MV-S102922-00, Rev. -March 21, 2006 Im nc kz M -et AR ga VE x4 LL 3r * CO Me NF me ID c ( EN H TI ead AL q , U uar ND ter ER s)

KMM591000AN

Abstract: KM41C464P KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble
Contextual Info: MEMORY ICS FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P 256K X 1 KM41C256J 256K X 1 KM41C256Z KM41C257P 256K X 1 256Kx 1 70/80/100 KM41C257J 256K X 1 256K X 1 Packages Remark CMOS Fast Page 16 Pin DIP Fast Page 18 Pin PLCC

KMCJ532512

Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
Contextual Info: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7

M8512

Abstract: samsung dram AM8512 TSOP 56 Package nand memory
Contextual Info: FUNCTION GUIDE MEMORY ICs 4. ORDERING INFORMATION 4.1 DRAM KM 4 X X XXXXX X X X - XX DRAM SPEED •6 : •7 : •8 : • 10: ORGANIZATION • 1: X1 • 4: X4 • 8: X8 60ns 70ns 80ns 100ns PACKAGE • 9: X9 •1 6 : X16 •P : DIP • 18: X18 • 32: x32 PROCESS & POWER

KM41C1000BJ

Abstract: KM44C256BP KM41C1000BP KM41C1001BP KM41C256P KM44C256BJ km4164 KM41C256J KM44C1000LJ KM41C464Z
Contextual Info: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Num ber Capacity 64K b it KM4164BP 256 K b it KM41C256P I [ I Technology Features Packages R em ark 100/120/150 NM OS Page M ode 16 Pin DIP 70/80/100 70/80/100 70/80/100 70/80/100 Fast Page Fast Page

l00a

Abstract: ECL-10K
Contextual Info: In tegrated D e v ice T ech n o lo gy, Inc. HIGH-SPEED BiCMOS ECL STATIC RAM 4K 1Kx 4-BIT SRAM PRELIMINARY IDT10A474 IDT100A474 IDT101A474 FEATURES: DESCRIPTION: • • • • • • • • The ID T 10A 474, ID T 1 0 0 A 4 7 4 and 1 0 1A 474 are 4,096-bit

LA 8512

Abstract: samsung dram 1M - FLASH PCMCIA linear card samsung memory rom 1K x8 SRAM 1m X 8 dip 1M - PCMCIA linear card SAMSUNG 256K x 16bit DRAM 30 pin SIP dram memory TSOP 44 Package nand memory
Contextual Info: FUNCTION GUIDE MEMORY ICs 4. ORDERING INFORMATION 4.1 DRAM KM 4 X X XXXXX X X X - XX DRAM SPEED •6 : •7 : •8 : •10: ORGANIZATION • 1: X1 • 4: X4 • 8: X8 • 9: X9 •16: X16 • 18: X18 • 32: x32 60ns 70ns 80ns 100ns PACKAGE PROCESS & POWER

Contextual Info: 3. Ordering Information DRAM SIMM NUMBERING SYSTEM 9 10 11 12 13 14 15 16 KM M AA BBB C DDD E F G H I J K L M - N N j SAMSUNG Memory I J Speed Lead Finish & Customer Module O nlyx32orx33 PCB Memory Type & Edge Connector Number of Components [ Organization

512x 8 ROM

Abstract: 1K x 8 static ram
Contextual Info: LSA2010 ¿ ¿ 6 Tw o M icron HCMOS Structured A rra y TM LSI LO G IC 000979 c o r p o r a t io n Lòuf General Description The LSA2010 is a member of the 2-micron drawn, (1.4-micron effective HCMOS family of Structured Arrays offered by LSI LOGIC Corporation. These very

samsung KLM ordering information

Abstract: samsung klm
Contextual Info: DRAM DIMM NUMBERING SYSTEM 12 KM M 3 72 E 4 1 0 A T T SAMSUNG 13 1 - L 6 M e m o ry Speed M o d u le M e m o ry T y p e & E d g e C o n n e c to r Power D a ta B it P C B R e v is io n M ode/F:e a tu re & P ro c e s s ¡¡•O peratin g V o lta g e P a c k a g e T y p e & L e a d F in is h

Contextual Info: ADV MICRO MEMORY 14E I QES7S2Ö 0G27SSM Am2148/Am2149 Am21 L48/Am21 L49 fi| Advanced Micro Devices 1024x4 Static RAM DISTINCTIVE CHARACTERISTICS • • • • High speed — access times as fast as 35 ns Fully static storage and interface circuitry Automatic power-down when deselected Am2148

AG10

Abstract: km416c256 1m maskrom KM68B1002-10
Contextual Info: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION 1.1 Dynamic RAM sg SA M SU N G Electronics 11 MEMORY ICs — 4M bit FUNCTION GUIDE 4M X 1 KM41C4000A-7 KM41C4000A-8 KM41C4000A-10 KM41C4000AL-7 KM41C4000AL-8 KM41C4000AL-10 — KM41C4000ASL-7 — KM41C4000ASL-8 - KM41C4000ASL-10

TC55B4257

Abstract: 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v
Contextual Info: CROSS REFERENCE GUIDE MEMORY ICs 3.1 Video RAM Density 256K Feature Minimum Organization 64K x4 Samsung KM424C64 Micron Toshiba NEC Hitachi Ti HM53461 2 TMS4461 HM534251 TMS44C250 TC524256A HM534251A SMJ44C250 TC524256B HM534252 MT42C4064 /a PD41264 /<PD42264

LC3514AD

Abstract: 3044B LC66506B LC5866H 512X4 LC5732 LC66516B LC66E516 LC66P516 LC3514AL
Contextual Info: ' ' " " ' y Case _ • P in s& Packag .„ V a r i a t i o n ' ^ Num ber 1 LC 6 6 5 16 B 2 3 Applications 1 ‘ '3 N o . 3071 ' High*Performance . Q IP 64A 3057 . ¡Type D IC with 64S LC 6 6 P 5 16 M a x .:; t M at Voltage ; t ' '- ; ; : Piggyback.

toshiba toggle mode nand

Abstract: TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP
Contextual Info: DRAM Technology n TOSHIBA DRAM TECHNOLOGY Toshiba DRAM Technology 2 DRAM Technology n DRAM TECHNOLOGY TRENDS Density Design Rule 64M→128M →256M →512M →1G 0.35µm →0.25 µm →0.20 µm →0.175 µm Cost Down, Yield Improvement High Bandwidth Multi - bit

al 232 nec

Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference
Contextual Info: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 — MB81257 — S. Column KM41C258 TC51258

toshiba 32k*8 sram

Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
Contextual Info: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258

LC51

Abstract: power LC51 bootloader TMS320 TMS320C5X addressing modes load and store instructions of TMS320C5x BQFP 100 PACKAGE tms320c5x speech TMS320C5x clock generation program lc56 TMS320C5x waveform generations
Contextual Info: C hapter 1 Introduction This user’s guide discusses the TMS320C5x generation of fixed-point digital signal processors DSPs in the TMS320 family. The ’C5x DSP provides im­ proved performance over earlier 'C1x and ’C2x generations while maintaining

PE 8001A

Abstract: 23C1001 KM41C256P 23C1010 KM41C464P KM68512 km41c256 TFK 805 TFK 001
Contextual Info: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM C apacity 256K bit 1M bit O rganization Speed ns T e ch n ology KM41C256P 255K X 1 70/80/100 CMOS Fast Page 16 Pm DIP Now KM41C256J 256 K X 1 70/80/100 CMOS Fast Page 16 Pm PLCC Now KM41C256Z 256Kx 1