1FT TRANSISTOR Search Results

mosfet low vgs 1A

Contextual Info: 2SK1973F5 h y V v 7»$ /Transistors 2SK 1973F5 y ij □ > N f * * Jl MOS K7 > y 2 2 Silicon N-channel MOSFET ^ < y ^ /Switching • i'i-ffi^'Ü H /D im en sio n s U n it: mm 1) 1ft* 2) i S i i X - f v ^ ^ ^ t " — Ko 3) SOA 4) iE i* [is & * ''fs a m o 5)

1Ft TRANSISTOR

Abstract: 100-G1000 T607 T640 74 C 909 oc 502 Wat70 OC201 TRANSISTOR 1Ft code 74w
Contextual Info: fit'll SINGLE-TURN TRIMMERS 80 Description TO-9 Transistor Case Single Turn Element Technology 75 * CO MODEL 63 * 1/4” Round or Square Single Turn Û3 3/8* Square Single Turn 1/2' Round Single Turn Wirewound Cermet Cermet Wirewound Page 15 Page 14 Page 12

Contextual Info: f i t ' l l Û3 SINGLE-TURN TRIMMERS 80 Description TO-9 Transistor Case Single Turn Element Technology 75 * CO MODEL 63 * 1/4” Round or Square Single Turn 3/8* Square Single Turn 1/2' Round Single Turn Wirewound Cermet Cermet Wirewound Page 15 Page 14 Page 12

t06 marking sot23

Abstract: BC857 3ft marking 6Ct SOT23 SOT89 marking cec marking da sot89 MARKING BL SOT89 SOT23 "Marking Code" t04 SOT89 MARKING CODE marking t04 sot23 marking 1G SOT23
Contextual Info: Philips Semiconductors Small-signal Transistors Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER PACKAGE MARKING CODE PACKAGE 2PA1576Q FtQ SC-70 BC808W 5Ht SOT323 2PA1576R FtR SC-70 BC808-16 5Ep SOT23 2PA1576S FtS SC-70 BC808-16W

marking code p07 sot89

Abstract: marking code 3Fp P1M marking code sot 223 PDTC* MARKING CODE p04 sot223 FtZ MARKING CODE T07 marking P2F SOT23 marking t04 sot23 marking code P1F
Contextual Info: MARKING CODES Page T y p e n u m b e r to m arking c o d e c ro s s re fe re n ce 68 M ark in g co d e to type n u m b er c ro s s re fe re n ce 74 Philips Semiconductors Small-signal Transistors Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER I MARKING

LM310M

Contextual Info: LM110/LM210/LM310 National Sem iconductor LM110/LM210/LM310 Voltage Follower General Description The LM110 series are monolithic operational amplifiers in­ ternally connected as unity-gain non-inverting amplifiers. They use super-gain transistors in the input stage to get low

transistor 1bt

Abstract: 1Ft SOT323 npn 1bt 1Ft TRANSISTOR marking code 1gt 1bt npn 1Bt 65 1Gt transistor marking code 1ft 1GT MARKING
Contextual Info: BC846W SERIES BC847W SERIES SURFACE MOUNT NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BC846W and BC847W Series types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface mount package,

transistor 1BT

Abstract: 1Gt transistor 1bt npn 1Ft SOT323 npn 1bt 1bt transistor marking code 1gt 1Ft TRANSISTOR 1gt MARKING TRANSISTOR 1gt
Contextual Info: Central BC846W SERIES BC847W SERIES TM Semiconductor Corp. SURFACE MOUNT SUPERminiTM NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BC846W and BC847W Series types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface

et1600

Abstract: Japanese Transistor TRANSISTOR P 3 80ng transistor N J
Contextual Info: VISHAY Vishay Telefunken T Classification Chart for Opto Couplers G e n e ra l p u rp o s e CTR>I0% Standard 4N25/2<> a Transistor output -, * - 4 N 3 Ï-3 7 !. TRMÔWE. I B ase n.c. |- Transistor output H igh CTR Darlington output American pin connection

2N3904

Abstract: 2N39D4 2N3304 pc 525 2N39Q4 2n3904 225 h 2n3904 2N3904S 2N3903 2N39Q3
Contextual Info: 2N3904 S/S TR r-r. ELECTRONICS GENERAL PURPOSE TRANSISTOR Colledor-Emitter Voltage: VCEOm40V Collector Dissipation: ABSOLUTE MAXIMUM RATINGS TA=25t: Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation

1Ft TRANSISTOR

Abstract: marking code 1ft Bc857bs
Contextual Info: Philips Semiconductors Product specification NPN general purpose double transistor FEATURES BC847BS PINNING • Low collector capacitance PIN DESCRIPTION • Low collector-emitter saturation voltage 1 ,4 emitter TR1; TR2 • Closely matched current gain 2, 5

ic chip ic 4410

Abstract: 4410 ic
Contextual Info: O rd e rin g n u m b e r: E N 4 4 1 0 No.4410 SA%YO 2SC4909 NPN Epitaxial Planar Silicon Transistor Muting Circuits, Drivers F eatu res • High DC current gain. • On chip bias resistance Ri = 47kii, R2 = 47kf2 . •Very small-sized package perm itting 2SC4909-applied sets to be made sm aller and slimmer.

BCW32

Abstract: BCW33 33T4 BCW31
Contextual Info: BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N transistors Marking BCW31 = Dl BCW32 = D2 BCW33 = D3 PACKAGE O UTLIN E D ETAILS ALL DIM EN SION S IN mm _3.0_ 2.8 0.48 0.38 Pin configuration 2.6 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.4 0.14 _L02

OA606

Contextual Info: /T ra n sisto rs DTB123TK DTB123TK Digital Transistors Includes Resistors 7 f/ T r a n s is to r Switch • • « ä 1) / W T X fflO fiÔ L É r t iK L T t'-S /c tb , ^ fä H / D im e n sio n s (Unit : mm) (1) Emitter (2) Base (3) Collector A m w ftftl-H m ti L T -l >

Contextual Info: Micmsemi 2N3375 2 N3632/2N3733 n i Montgomeryville, PA «1893 Tei: 215 6 3 1-9 840 ^M*X«VKÌÌ Ì>y RF & MICROWAVE TRANSiSTORS VHF-UHF CLASS C WIDE BAND « PR£QU£NCY !30 TO 400MHz « » « » 28V 2.5 TO 13.5W VOLTAGE: PO W sH O'J i HiGM POVVf:« GAiN

1Ft TRANSISTOR

Abstract: dual transistor 1ft kd7212
Contextual Info: 729462 1 POWEREX INC T K W B iE Tfl d Ë J 75T4b51 00022b5 1 J ” D 'T z- 3 3 - 3 $ ‘ KD7212A2 X Powerex, Inc., Hillls Street, Yotingwood, Pennsylvania 15697 412 925-7272 D U S l D a r H /lC ftO /l Transistor Module 25 Amperes/1200 Volts D escription

Contextual Info: M | âMM RF-Products M i r m I r f f v ' I c m a 140 Commerce Drive Montgomeryvilte, PA 18936-1013 Tel: {215} 631-9840 i t w f Iff A^VKf Aîiwwm1fcyfioXwai?/ SD1893 RF & MICROWAVE TRANSISTORS MAR ISAT APPLICATIONS FHtOUENOY POWER o u r POWER GAIN 1.65G H 2

8B123

Abstract: 2SB1232 2SD1842 1SB12
Contextual Info: |~Ordering number: EN 3261A 2SB1232/2SD1842 2SB1232 : P N P Epitaxial Planar Silicon Transistor 2SD1842 : N P N Triple Diffused Planar Silicon Transistor 100V/40A Switching Applications Featu res •Large current capacity and wide ASO. •Low saturation voltage.

Contextual Info: t i A w ! n M Ì n ? J - * . -T» . m m l C l U a C l l l f 140 C o m m e rc e D rive iM iio u n u uoM c i v v i i t v i PA I n t u iv i n itg mi eryvilte, 18936-1013 Tel: 215 631-9 840 ^ ^ M ^ ^ SD1429 RF & MICROWAVE TRANSISTORS 450-512MHz CLASS C, MOBILE APPLICATIONS

transistor 1BT

Abstract: 1Ft SOT323 1Ft TRANSISTOR transistor 1Ht BC847CW1GT transistor 1kt BC846W 1Bt 65 1kt marking code npn 1bt
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D102 BC846W; BC847W; BC848W NPN general purpose transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 27 Philips Semiconductors Product specification

C2389

Abstract: 2SC2389 LPGL 2SC2390 SA-1038 2SC2389S
Contextual Info: h ~P> V $ /Transistors 2SC2389/2SC2389S/2SC2390 2SC2389/2SC2389S/2SC2390 I fcf £ V T — NPN '> U - l > Epitaxial Planer NPN Silicon Transistors iliiÎJŒ' 5;ü>Jt15:! ;H Î i ,liffl/H ig h Voltage Low Freq. Low Noise Amp. il-J fi^ iilS I/D im e n s io n s (Unit : mm)

2SC4458

Contextual Info: Ordering num ber: EN 3329 I SA ft/O i _ No.3329 2SC4458 NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications F eatu re s • High breakdown voltage, high reliability •Fast switching speed • Wide ASO • Adoption of MBIT process

BUK457-600B

Contextual Info: Product Specification Philips Semiconductors PowerMOS transìstor GENERAL DESCRIPTION N-channel enhancement mode fieid-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

Contextual Info: f i t ' l l Û 3 SINGLE-TURN TRIMMERS 80 Description TO-9 Transistor Case Single Turn Element Technology Specifications, Ordering Information 75 * CO MODEL 63 * 1/4” Round or Square Single Turn 3/8* Square Single Turn 1/2' Round Single Turn Wirewound Cermet