1FT TRANSISTOR Search Results

LM310M

Contextual Info: LM110/LM210/LM310 National Sem iconductor LM110/LM210/LM310 Voltage Follower General Description The LM110 series are monolithic operational amplifiers in­ ternally connected as unity-gain non-inverting amplifiers. They use super-gain transistors in the input stage to get low

et1600

Abstract: Japanese Transistor TRANSISTOR P 3 80ng transistor N J
Contextual Info: VISHAY Vishay Telefunken T Classification Chart for Opto Couplers G e n e ra l p u rp o s e CTR>I0% Standard 4N25/2<> a Transistor output -, * - 4 N 3 Ï-3 7 !. TRMÔWE. I B ase n.c. |- Transistor output H igh CTR Darlington output American pin connection

ic chip ic 4410

Abstract: 4410 ic
Contextual Info: O rd e rin g n u m b e r: E N 4 4 1 0 No.4410 SA%YO 2SC4909 NPN Epitaxial Planar Silicon Transistor Muting Circuits, Drivers F eatu res • High DC current gain. • On chip bias resistance Ri = 47kii, R2 = 47kf2 . •Very small-sized package perm itting 2SC4909-applied sets to be made sm aller and slimmer.

BCW32

Abstract: BCW33 33T4 BCW31
Contextual Info: BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N transistors Marking BCW31 = Dl BCW32 = D2 BCW33 = D3 PACKAGE O UTLIN E D ETAILS ALL DIM EN SION S IN mm _3.0_ 2.8 0.48 0.38 Pin configuration 2.6 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.4 0.14 _L02

1Ft TRANSISTOR

Abstract: dual transistor 1ft kd7212
Contextual Info: 729462 1 POWEREX INC T K W B iE Tfl d Ë J 75T4b51 00022b5 1 J ” D 'T z- 3 3 - 3 $ ‘ KD7212A2 X Powerex, Inc., Hillls Street, Yotingwood, Pennsylvania 15697 412 925-7272 D U S l D a r H /lC ftO /l Transistor Module 25 Amperes/1200 Volts D escription

Contextual Info: t i A w ! n M Ì n ? J - * . -T» . m m l C l U a C l l l f 140 C o m m e rc e D rive iM iio u n u uoM c i v v i i t v i PA I n t u iv i n itg mi eryvilte, 18936-1013 Tel: 215 631-9 840 ^ ^ M ^ ^ SD1429 RF & MICROWAVE TRANSISTORS 450-512MHz CLASS C, MOBILE APPLICATIONS

transistor 1BT

Abstract: 1Ft SOT323 1Ft TRANSISTOR transistor 1Ht BC847CW1GT transistor 1kt BC846W 1Bt 65 1kt marking code npn 1bt
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D102 BC846W; BC847W; BC848W NPN general purpose transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 27 Philips Semiconductors Product specification

2SC4458

Contextual Info: Ordering num ber: EN 3329 I SA ft/O i _ No.3329 2SC4458 NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications F eatu re s • High breakdown voltage, high reliability •Fast switching speed • Wide ASO • Adoption of MBIT process

1Ft TRANSISTOR

Abstract: tr/1Ft TRANSISTOR
Contextual Info: TOSHIBA TPC8002 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSVI TPC8002 LITHIUM ION BATTERY INDUSTRIAL APPLICATIONS PORTABLE MACHINES AND TOOLS NOTE BOOK PC Low Drain-Source ON Resistance : R ßS (ON)“ H -5 m n (Typ.) High Forward Transfer Adm ittance: |Yfs| = 15S (Typ.)

PA10A

Abstract: AM 22A Operational amplifier LM 60W
Contextual Info: PAIO • PAIOA APE X MICROTECHNOLOGY CORPORATI ON » APPLI CATI ONS HOTLI Nb 800 546- APf cX 8 0 0 - 5 4 6 - ^ 739| FEATURES • • • • • GAIN BANDWIDTH PRODUCT — 4MHz TEMPERATURE RANGE — -5 5 to +125=C (PAIOA EXCELLENT LINEARITY — Class A /B Output

TC74HC4538P

Abstract: Mono stable
Contextual Info: TOSHIBA LO GI C/M EMO RY 116 O I 1017349 QOlfltlS l | TC74HC4538P/F T - S m TC74HC4538P/F DUAL RETRIGGERABLE MONOSTABLE MULTIVIBRATOR The TC74HC4538 Is a high speed CMOS MONOSTABLE MULTIVIBRATOR fabricated with silicon gate C2M0S technology. It achieves the high speed operation similar to equivalent

Contextual Info: Provisional Data Sheet No. PD 9.1285C International IOR Rectifier HEXFET PO W ER M O S FE T IRFY044CM N-CHANNEL Product Summary 60 Volt, 0.040Q HEXFET HEXFET technology is the key to International Rectifier's advanced line of power M O SFET transistors. The effi­

Rotary Sensor quadrature .5 inch shaft

Abstract: Rotary Sensor quadrature .5 inch shaft 500 pulses per revolution Rotary Sensor quadrature .5 mounting inch shaft Rotary Sensor quadrature .5" shaft RPGQ0500 wheel Optical Sensors rotary encoder 500 ppr 0.5" shaft diameter quadrature LSQD0100 quadrature output 500 pulses per revolution rotary encoder 500 pulses 0.5" shaft diameter quadrature
Contextual Info: Bulletin No. RPG/LSQ-L Drawing No. LP0199 Released 5/03 Tel +1 717 767-6511 Fax +1 (717) 764-0839 www.redlion-controls.com MODEL RPGQ - QUADRATURE OUTPUT ROTARY PULSE GENERATOR AND MODEL LSQ - QUADRATURE OUTPUT LENGTH SENSOR ! ! 100, 200 & 500 PULSES PER REVOLUTION

philips diode PH 33D

Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

2N5306 equivalent

Abstract: ATI 200M D39C4 GES6220 2N4256 2N4424 2N4425 2N5174 2N5232 2N5232A
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10mA V hFE Min.-Max. @ IC, V C E (V> (V) Max. Typical (MHz) C cb @10V 1 MHz Typical (Pf) @ 25° C (mW) fT V C E (SA T ) l c . *B PT 2N4256 2N4424 2N4425 NPN NPN NPN

IC TC 3588

Abstract: 2SA140 C3588
Contextual Info: ' > 1j I ] > Silicon Transistors 2 S A 1 4 0 0 , 1 4 0 0 -Z # 1L n m m i t o f l i i t E E T " "t'o o a V CE0= — 400 • m m V 2SA 1400 u ? j'f à m W . B . f r 'b Z '* '* V c E s a t)^ - l-0 V 2 .3 + 0 .2 t f ^ l . O ¿¿s 0 .5 + 0 .1 O 2SC 3588, 2 S C 35 88 -Z t

Rotary Sensor quadrature .5 inch shaft 500 pulses per revolution

Contextual Info: Bulletin No. ZCH/ZFH-A Drawing No. LP0738 Effective 10/09 Tel +1 717 767-6511 Fax +1 (717) 764-0839 www.redlion.net MODEL ZCH - QUADRATURE OUTPUT ROTARY PULSE GENERATOR MODEL ZFH and ZGH - QUADRATURE OUTPUT LENGTH SENSORS (Replaces MODELS RPGQ, LSQS and LSQD respectively)

1Ft SOT363

Abstract: sot363 1ft 1Ft TRANSISTOR BC847BS Philips
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BC847BS NPN general purpose double transistor Product specification Supersedes the data of 1997 Jul 14 1999 Apr 28 Philips Semiconductors Product specification NPN general purpose double transistor

WH025

Abstract: TC-6248
Contextual Info: Compound Transistor GN1A4P ^-fi ‘ mm ft m 2.1 ± 0 .1 o '< -i T 7 s ft £ f i;£ [* j$ ( R i = 10 k£2, R 2 = 47 1.2 5 ± 0 .1 kQ) )C O G A 1 A 4 P t =J > 7 ° | J y > ? U T - fé flf- e è M a r k in g (T a = 25 °C) m u 1»S 3 L- 7 7 • 3 ? •''i -

mitsumi fm tuner block

Abstract: Mitsumi fm IFT Mitsumi PVC tuning capacitor mitsumi tuner vco am fm if radio Mitsumi AM coil ift AM osc coil Mitsumi IF transformer Mitsumi PVC 27 ir 38khz emitter Mitsumi 10.7MHZ COIL
Contextual Info: A N 7235K /S AN7235K/S RF + FM-IF + AM Tuner + MPX 1 Chip IC for Radio/Radio Cassette Tape Recorders AN7235K • Description i <: c c c T h e A N 7235K /S are m on o lith ic in teg rated circu its w ith F M FE , A M /FM IF, A M FE, FM M PX , A M D et and A GC

marking s59

Abstract: DIODE S59 marking marking mosmic ph98 marking IAY SOT343R marking 5U S0T143 mosmic
Contextual Info: VISHAY VISHAY INTERTECHNOLOGY. INC. THE POWER TO IMPROVE The S e c o n d Generation of the 5 V M O S M I C ' “ Family PRODUCT OVERVIEW w w w .vlshay.com WELL-KNOWN DEVICES - IMPROVED CHARACTERISTICS FEATURES • O n -c h ip b i a s i n g netw ork •Im p ro v e d c r o s s m o d u la tio n c h a r a c t e r is t ic s

Contextual Info: SflE D • 312=5557 GÜG2534 'ìfi'ì « E L A EL2026 HIGH PERFORMANCE ANALÛG INTEGRATED CfflCUl’ S LOW VoltClQG SdTVO MotOV DVIV&T ELANTEC INC EL2026 é la n tB C T 'S Z - 1 3 - Z S G eneral D escrip tion The EL2026 is a servo motor driver designed to drive voice coil

ke92

Abstract: 1Ft TRANSISTOR hb595 ke921k05
Contextual Info: m¥EREX P O W E R E X INC B^E T> m T B T H b S l O G D M M b O 'ì H P R X Powerex, Inc., Hlllls S tre e t, Youngwood, Pennsylvania 1S697 412 925-7272 Powerex Europe, S.A., 428 Avenue G, Durand, BP107, 72003 Le Mans, France (43) 41.14.14 KE921K05HB r - 3 3 -35"

JI32

Abstract: 2SK482 T460 t460 transistor diode sg 5 ts
Contextual Info: NEC m ^ T Y = 7 > i > 7 * MOS f v r x Field Effect P ow er Transistor _ 2SK482 FET n im m N-Channel MOS Field E ffect P ow er T ra n s is to r Sw itching Industrial Use 2SK482ii, tfjIiEfcCON-f-v —MOS FET"C, Xj -yj - fl-J & l*]/P A C K A G E DIM ENSIO NS