1SS154 Search Results

1SS154

Abstract: varicap ghz
Contextual Info: 1SS154 SPICE PARAMETER 20020226 SPICE MODEL: DATA FORMAT: SPICE SYMBOL: BERKLEY SPICE2G6 DIODE MODEL MODEL FORMAT - TT(s),EG(eV),XTI(-) FREQUENCY RANGE: f = 0.1 to 3 GHz VOLTAGE RANGE: Va = -5 to 0.4V AMBIENT TEMPERATURE:

1SS154

Contextual Info: TO SHIBA 1SS154 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 S S 1 54 U H F-S BAND M IX E R / DETECTOR APPLICATIONS U nit in mm +0.5 2.5 - 0.3 Small Package. M A X IM U M RATINGS Ta = 25°C SYMBOL CHARACTERISTIC RATING 6 UNIT V Reverse Voltage

Contextual Info: 1SS154 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS154 UHF~S Band Mixer/Detector Applications • Unit: mm Small package. Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Reverse voltage VR 6 V Forward current IF 30 mA Junction temperature

1SS154

Contextual Info: 1SS154 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS154 UHF~S Band Mixer/Detector Applications • Unit: mm Small package. Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Reverse voltage VR 6 V Forward current IF 30 mA

1SS154

Contextual Info: 1SS154 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS154 UHF~S Band Mixer/Detector Applications • Unit: mm Small package. Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Reverse voltage VR 6 V Forward current IF 30 mA Junction temperature

Contextual Info: 1SS154 TO SH IB A TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 • w êêf w êêf m 5 4 wm r m UHF-S BAND MIXER /DETECTOR APPLICATIONS U n it in mm ELECTRICAL CHARACTERISTICS Ta =25°C SYMBOL Reverse Current Forward Voltage Ir Forward Voltage

Contextual Info: 1SS154 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE DIODE U nit in mm U H F - S BAN D M IXER / DETECTOR APPLICATIONS. + 0.5 2 5 -0 3 Small Package. M A X IM U M RATINGS Ta = 25°C SYMBOL CHARACTERISTIC Reverse Voltage Forward C urrent Junction Tem perature Storage Tem perature Range

Contextual Info: 1SS154 TO SHIBA TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 S S 1 54 Unit in mm U H F-S BAND M IX E R / DETECTOR APPLICATIONS +0.5 2.5-0.3 Small Package. M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Reverse Voltage Forward Current Junction Temperature

smd marking BA

Abstract: transistor smd marking BA transistor smd marking BA sot-23 smd transistor marking ba smd diode marking 9 ba 1SS154
Contextual Info: Diodes SMD Type UHF~S BAND MIXER/DETECTOR APPLICATIONS 1SS154 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector

1SS154

Abstract: SC-59 marking 1F 1fa MARKING AI500
Contextual Info: 1SS154 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE UHF-S BAND MIXER /D ET ECT OR APPLICATIONS. U n i t in m m + 0.5 . Small Package MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT Reverse Voltage Vr 6 V Forward Current If 30 mA Junction Temperature

Contextual Info: 1SS154 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS154 UHF~S Band Mixer/Detector Applications • Unit: mm Small package. Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Reverse voltage VR 6 V Forward current IF 30 mA Junction temperature

1SS154

Contextual Info: 1SS154 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS154 UHF~S Band Mixer/Detector Applications • Unit: mm Small package. Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Reverse voltage VR 6 V Forward current IF 30 mA

k192a

Abstract: c2458 C2498 C2668 C2717 C1923 Y C2499 k710 K241 C2995
Contextual Info: ALPHANUMERICAL INDEX Type No. Marking Page Type No. Marking 1SS154 BA 105 1SV217 T6 175 1SS239 SI 107 1SV224 T7 177 1SS241 TY 109 1SV225 V3 179 1SS242 S2 111 1SV226 TA 181 1SS268 BF 113 1SV227 T9 183 1SS269 BG 115 1SV228 V4 185 1SS271 BD 117 1SV229 T8 188

1SS154

Contextual Info: 1SS154 東芝ダイオード シリコンエピタキシャルショットキバリア形 1SS154 ○ UHF～S バンド受信ミキサ/検波用 単位: mm z 超小型パッケージです。 絶対最大定格 Ta = 25°C 項目 記号 定格 単位 逆 電

Contextual Info: Product specification 1SS154 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector A b s o lu te M a x im u m R a tin g s T a = 2 5

1SS154

Contextual Info: 1SS154 TO SH IBA TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 S S 1 54 Unit in mm U H F-S BAND M IXER/DETECTOR APPLICATIONS + 0 .5 2 .5 -0 .3 Small Package. MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Reverse Voltage Forward Current Junction Temperature

isv149

Abstract: ISV101 iss314 ISV262 ISV172 1SS242 ISV103 ISV255 1SS239 ISV229
Contextual Info: V a ria b le C a p a c ita n c e D iode F5 Type No. Package Type No. ISV101 - ISV102 - ISV103 Package - ISV225 MINI SUPER MINI ISV147 ISV228 ISV149 HN1V01H, HN1V02H, HN2V02H Package Type No. FM8 Type No. Package Type No. Vr Ct V (pF) Ct V r(V) (pF) Application

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

SCJ0004N

Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード

Variable Capacitance Diodes

Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
Contextual Info: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A

smd code book

Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
Contextual Info: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ

TA4029CTC

Abstract: TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X
Contextual Info: 製品カタログ 2011-1 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 アプリケーション別推奨製品 .3~8

RFM70U12D

Abstract: 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 高周波デバイス 高周波バイポーラ小信号トランジスタ 高周波小信号 FET 高周波パワーMOSFET 高周波バイポーラパワートランジスタ 高周波ダイオード 小信号 MMIC 高周波セルパック

JDV2S31CT

Abstract: 1SV283B 1SV271 2SK1875 2sk3476 1SV128 1SV307 1SV308 DCS1800 IMT-2000
Contextual Info: 製品カタログ 2009-9 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 高周波用半導体デバイス 当社半導体製品につきましては格別のお引き立てを賜わり誠にありがとうございます。