EY86
Abstract: HX33 HX31 diode d5c HS40-4 diode D6E HS40A ZC0300 ZC0310 1N5149
Contextual Info: S ILIC O N DIODES Step Recovery Diodes R .F. Po w er Output Type M ax. V r d .c. volts 1N 5149 1N 5150 1N5151 1N 5152 1N5153 1N5154 1N5155 ZC 62 0 ZC 03 0 0 ZC 03 1 0 80 80 75 75 75 35 35 35 75 40 c to t * pF Min. 5-0 50 50 50 50 1 0 1 0 0-6 2-5 1 -9 M ax.
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1n51491n51501n51511n5152+131n51531n51541n5155zc620zc0300zc0310ey86hx33hx31diode d5chs40-4diode d6ehs40a
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AB820
Abstract: 1N5154 rs-6v AB822
Contextual Info: SILICON MUiIT I PLIER DIOiDES TYPE NUMBER 1N5149 1N5150 1N5150A 1N5151 1N5152 1N5153 1N5152A 1N5153A 1N5154 1N5155 1N5155A 1N5156 1N5157 POWER DISSIPATION Pd WATTS @ 25°C 10.0 14.0 21.0 5.5 5.5 5.5 8.4 8.4 3.5 3.5 6.2 3.3 3.3 THERMAL RESISTANCE °C/W MAX
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1n51491n51501n5150a1n5151+91n51521n51531n5152a1n5153a1n51541n5155ab820rs-6vab822
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ab802
Abstract: 1N5150A AB810 1N5149 1N5151 1N5153 1N5155 1N5157 1N5150 1N5152
Contextual Info: 0258354 ADVANCED SEMICONDUCTOR ADVANCED SEMICO ND UC TOR 82D 00079 02 D T -0 7 -U Ï > F | o 2SÛ354 OOGODTT ñ § ~ Silicon Power Multiplier Diodes WAÎTS OUTPUT FREQ ^our MHz POWER OUTPUT P o u r im WATTS BREAKDOWN VOLTAGE Vb IMINI @10fiA 500 20.0 1000 11.0
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02sfl3s41n51491n51501n5150a+101n51511n51521n51531n5152a1n5153a1n5154ab802ab8101n51551n5157
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1N5150-5157
Abstract: kd 617 1N5149 1N5152 max current 1n4388
Contextual Info: 1N4386-88 and 1N5150-5157 Series High Power Multiplier Varactors Features • HIGH POWER ■ HERMETIC SEALS ■ LOW THERMAL RESISTANCE ■ HIGH EFFICIENCY Applications These series of high power silicon multiplier diodes are designed for efficient frequency conversion at output fre
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1n4386-881n5150-5157kd 6171n5149+21n5152 max current1n4388
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1N5438
Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi
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27tfc1n5438tfc 56302n5161+7germanium2n41931n1319a2023 transistor2n2171n5159transistor bf 175
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BPW22A
Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey
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bs9000d3007he4000b80ribution+10bpw22acm .02m z5u 1kvpin configuration of bfw10la4347b2x84tda3653 equivalenttriac tag 9322hef40106bp equivalentfx4054 coredsq8
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BAT31
Abstract: microwave varactor diode x band varactor diode 1N4885 varactor ghz BAY96 varactor diode capacitance range SOD-31 Diode BAY96 BXY56
Contextual Info: Microwave solid state book 1 part 8 D e s c r ip tio n D ra w in g re fe re n ce T ype No. O u tlin e multiplier varactor diodes 25 6 55 N 1 .5 6 45 1 0 0 m in . S O D -3 1 N 1 .0 6 25 120 S O D -3 1 N 0 .7 5 6 20 150 150 9 5 3 1.6 1 .0 0 .6 5 0 .4 6 6 6 6
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bay96bxy27od-31bxy28+12bxy29cxy10od-46bat31microwave varactor diodex band varactor diode1n4885varactor ghzvaractor diode capacitance rangesod-31diode bay96bxy56
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2N3800
Abstract: germanium diode germanium tu 38 e 2n4051 motorola 2N4280 2N3980 1N3492 MC710F 2N4276 2n3817
Contextual Info: DATA BDI S U P P L E M E NT This is the second supplement to the 2nd Edition of the Semiconductor Data Book originally published in August 1966. It is produced to keep an up-to-date listing of the most advanced semiconductor products. D evices characterized in this supplement include only the type numbers in tro
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29b52595f1352595f092n3800germanium+8diode germanium tu 38 e2n4051 motorola2n42802n39801n3492mc710f2n42762n3817
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JE1100
Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices
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je1100mfc8040mfc8030mc1316+6triac 9707schematic of mc1466transistor mje 5332je 3055 motorolamcr407-2mc1466
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varactor 36z
Abstract: germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY FIRST EDITION prepared by Technical Information Center T h e in fo rm a tio n in th is bo o k has been c a re fu lly checked and is believed to be re lia b le ; ho w ever, no re s p o n s ib ility is assumed fo r inaccuracies. F u rth e rm o re , th is in fo rm a tio n does n o t convey to the purchaser o f s e m ic o n d u c to r
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z1000mz4614mz46271n4099+13m4l3052m4l30561n5158varactor 36zgermaniumhalbleiter index transistorhalbleiter buch2n53472n3054working of reactance modulatorje2955germanium transistor2n3902
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1N4387
Abstract: 1N4386 1N5154 1N5150 1N5151 1N5150-5157 1N5155 1N4388 1N5149 1N5150A
Contextual Info: M/A-con s e u i c o n d t Br lngto n h d A$ m 5b42214 QGQlB'iL. h • MIC T-07-11 1N4386-88 and 1N5150-5157 Series High Power Multiplier Varactors Features ■ HIGH POWER ■ HERMETIC SEALS ■ LOW THERMAL RESISTANCE ■ HIGH EFFICIENCY Applications These series of high power silicon multiplier diodes are
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5b422141n4386-881n5150-5157twxt-07-11+91n43871n43861n51541n51501n51511n51551n43881n51491n5150a
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OT239
Abstract: BT100a 02 CQX82A TRIO TA 80W CV7351 ZP1481 CV2154 ZP1430 triac mw 151 500r PL5727
Contextual Info: Milliard quick reference guide 1978/79 — discrete semiconductors — passive components — valves and tubes This guide gives quick reference data on Mullard electronic components. The information is deliberately abbreviated to give a rapid appreciation of salient characteristics, and to
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ot239bt100a 02cqx82atrio ta 80w+6cv7351zp1481cv2154zp1430triac mw 151 500rpl5727
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MC2259
Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the
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mc2259mc880pmc9713pmc2257+61n4003 germanium diode specification2n1256 s p1n4465mc9802pmc9718p3n214
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transistor c2060
Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,
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an-134transistor c2060transistor shortform datasheet & cross references1n4465+7c1906 transistorgermanium itt3n58in939mc1230f2n3866 motorolac943 transistor
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GFB7400D
Abstract: FEY101B TCA290A Rifa pmr 2026 EF184 ORP52 Mullard Mullard quick reference guide GZF1200 ITT A2610 YD 6409
Contextual Info: AN INTRODUCTION TO: Cartwright ELECTRONIC COMPONENTS 517 LAWMOOR STREET DIXONS BLAZES INDUSTRIAL ESTATE GLASGOW G5 041-429 7771 Cartwright Electronic Components started trading in April, 1971 as the electronics division of John T. Cartwright & Sons ERD North Ltd . From very modest
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gfb7400dfey101btca290arifa pmr 2026+6ef184orp52mullard mullard quick reference guidegzf1200itt a2610yd 6409
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in5388
Abstract: 2N5161 germanium 4m28 Germanium drift transistor 2N5070 1NS248 2N5271 inverter welder 4 schematic
Contextual Info: THE SEMICONDUCTOR DATA LIBRARY r*^r* fe SER IES A V O LU M E II i«»* »^ 'i1? prepared by Technicallnformation Center The inform ation in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this inform ation does not convey to the purchaser of semiconductor
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plu300in53882n5161germanium+64m28germanium drift transistor2n50701ns2482n5271inverter welder 4 schematic
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SEM 5027A
Abstract: transistor BD 540 LYS MC710G 131-80 wj 89 MC707G 2n328 LN4005 diode reverse current and voltage mc708g C844P TS36A
Contextual Info: SELECTION GUIDES How To Use The Data Book Numerical Index Alphabetical Index Device Outlines GENERAL INFORMATION SILICON ZENER DIODES Regulator Diodes, Reference Diodes, Precision Reference Diodes and Reference Amplifiers SILICON RECTIFIERS SILICON RECTIFIER ASSEMBLIES
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sem 5027atransistor bd 540 lysmc710g131-80 wj 89+6mc707g2n328ln4005 diode reverse current and voltagemc708gc844pts36a
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1N5160
Abstract: MAX 6438 GEO SEMICONDUCTORS 2N6058 transistor bf 175 2N3902 2N5696 1N5788 Germanium itt
Contextual Info: DEVICE INDEX Devices characterized in Volume II show the page reference only. Devices characterized in Volume I are referenced by volume and page number. DEVICE 1N5000 1N5001 1N5002 1N5003 1 N 5 1 3 9 .A 1 N 5 1 4 0 .A 1 N 5 1 4 1 .A 1 N 5 1 4 2 .A 1 N 5 1 4 3 .A
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1n50001n50011n50021n5003+141n51491n51501n51531n51551n51581n51591n5160max 6438 geo semiconductors2n6058transistor bf 1752n39022n56961n5788germanium itt
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