1N4384 Search Results

Contextual Info: 1N4383GP, 1N4384GP, 1N4385GP, 1N4585GP, 1N4586GP www.vishay.com Vishay General Semiconductor Glass Passivated Junction Plastic Rectifier FEATURES SUPERECTIFIER • Superectifier application structure for high reliability • Cavity-free glass-passivated junction

1N4384

Contextual Info: 1N4384 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 1N4384 Availability Online Store

1N5498

Abstract: CA542 AP6KE91A CGJ-1 DF06S 214 H AG 48 2KBP10M I1404 P6KE200 602 CA-592 BZWO4P
Contextual Info: NUMERICAL INDEX 1.5KA6.8.A .564 1.5KE22C.CA. 592 1.5KE170.A. 592 1N4383GP. 1.5KA7.5.A.564 1.5KE24.A.592 1ÆKE170C.CA.592 1N4384GP.244

IN5403

Abstract: 1N4007GPP 1n5624v
Contextual Info: Rectifiers, General Purpose 1.0 to 250 Amperes 50 to 1600 Volts 10 AMPS 1.0 @ T a (°C) 75 75 75 55 100 IFSM (AMPS) 30 50 50 50 50 CASE I /I GPR-1A DO-41 VRRM (VOLTS) 50 1N4001 1N4001GPP* 100 1N4002 1N4002GPP* GPR-1A DO-41 Glass 1N4245 1N4383 1N4246 1N4384

J10g

Abstract: 1N4005GP 1N4248GP GP08D 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4006GP GP08A
Contextual Info: Standard Superectifiers Part No. CrossReference GP08A GP08B GP08D GP08G GP08J 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4001G 1N4002G 1N4003G 1N4004G 1N4005G 1N4006G 1N4007G 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3957GP 1N4383GP 1N4384GP

IN5403

Abstract: 1N4007GPP CPR1-010
Contextual Info: Rectifiers, General Purpose 1.0 to 250 Amperes 50 to 1600 Volts lo AMPS @ t a (°C) IFSM (AMPS) CASE VRRM (VOLTS) 1.0 Ì Ì/ 75 75 75 55 100 30 50 50 50 50 G PR-1A DO-41 Glass 1N4245 1N4383 1N4246 1N4384 1N4247 1N4385 * G PR-1A DO-41 50 1N4001 1N4001GPP*

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1N4385GP

Abstract: 1N4585GP 1N4586GP DO-204AC 1N4383GP
Contextual Info: 1N4383GP thru 1N4385GP, 1N4585GP, 1N4586GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES SUPERECTIFIER • Superectifier application structure for high reliability • Cavity-free glass-passivated junction • Low forward voltage drop

BYD74G

Abstract: FUR460 diode tfk 18db6a diode cross reference FAGOR SM6T33CA BZY97C tfk 240 1SMZG06GP D4SB80Z
Contextual Info: Cross Reference Every care has been taken in compiling this cross reference list which is published in good faith to assist engineers. Readers are reminded that this list is intended for guidance only. FAGOR ELECTRÓNICA can not be held responsible for any

COLOR tv tube charger circuit diagrams

Abstract: MBRF 1015 CT smd diode S4 67A DO-213AB smd diode color marking code vacuum tube applications data book V40100PG diode 719 b340a EQUIVALENT 31gf6 SB050 D 168 s104 diode 87a
Contextual Info: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book rectifiers vishay general semiconductor vse-db0001-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

Contextual Info: 1N4383GP thru 1N4385GP, 1N4585GP, 1N4586GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier application structure for high reliability • Cavity-free glass-passivated junction • Low forward voltage drop • Low leakage current

Contextual Info: 1N4383GP thru 1N4385GP 1N4585GP & 1N4586GP Vishay General Semiconductor Glass Passivated Junction Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 200 V to 1000 V IFSM 50 A IR 5.0 µA VF 1.0 V Tj max. 175 °C d* e t n Pate DO-204AC (DO-15)

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

1N2222A

Abstract: 1n2222 IN2071A 1N3934 1N3578 IN222 IN1342 IN5054 IN5053 1N3549
Contextual Info: xcmicron - _ SB._ 27E » • MäbTEMb 00005=17 MäbTEMb O OOOST? s em ic o n d u c to r s S e m itr o n ic s C o r p . IN T E X / S E M IT R O N IC S silicon rectifiers cont’d miniature axial lead silicon rectifiers T»» 1N3241 1N3242 1N3243 1N3244

DO-204AC

Abstract: gf1m DO-214BA DO204AC DO204AL GI816 DO-204AL RG02-20E RG02 RGP02 VR800
Contextual Info: SUPERECTIFIERS 0.25 TO 3.0 AMPERES 50 VOLTS TO 4000 VOLTS INTRODUCTION TO SUPERECTIFIER General Semiconductor Superectifier is exactly that, a super rectifier. There is nothing else in the world like it. This is the most cost effective and highly reliable device on the market which is the result of a combination of patented technologies.

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

Diode 1N4007 DO-7 Rectifier Diode

Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A

N5401

Abstract: D0201AD N4935 DO-41 6R600 1N4140 D0-201AD DO41 1N4142 1N4007 DO-41 package
Contextual Info: INTERNATIONAL SEMICOND 4^E ]> • T00037Ô OOOOOll 471 B I S E » SCH OTTKY RECTIFIERS r Vrrm 7 O p e ra tin g a n d ^ S to ra g e Temp. R a n g e Type 1N5817 Package Volts DO-41 20 1.0 25 1N5818 1N5819 SR 120 DO-41 DO-41 DO-41 30 40 20 1.0 1.0 1.0 25 25

1N3549

Abstract: 1N2482 IN2071 1N553 INI128 1N2070 1N3247 1N3245 1N33 1n256
Contextual Info: xemitran ffP IP P ftih v V P B M 5?E D • OOOOHT? fi semiconductors SemitronicsCorp. INTEX/ SEMITRONICS discrete devices CORP silicon rectifiers cont’d miniature axial lead silicon rectifiers DO-41 case style— t»m 1N3241 1N3242 1N3243 1N3244 1N3245 1N3246