1999I Search Results

Contextual Info: aixYs Dimensions in inch and [mm] 1 " = 25.4 mm 0.04Q[l .02] KS7 G O.MflQ.023 0.259(6.58] 0.021 [0.52] {g U o JX53 G t 0.029 [0.7+] — - 0.173 ¡4.39] 0.048 [1 . 2 ii SQ , U 3 961 :.m i 0.35' :391] 1999IXYS All rights reserved J- 7 Dimensions in inch and [mm] (1" = 25.4 mm)

GS88218

Abstract: GS88236
Contextual Info: Preliminary GS88218/36B-11/11.5/100/80/66 119-Bump BGA Commercial Temp Industrial Temp MHz 512K x 18, 256K x 36 ByteSafe 100 MHz–66 3.3 V VDD 8Mb S/DCD Sync Burst SRAMs 3.3 V and 2.5 V I/O Features on every cycle with no degradation of chip performance.

SDT7132

Contextual Info: OlDT HIGH SPEED 2K X 8 DUAL-PORT STATIC RAM WITH INTERRUPTS ÎDT71321SA/LA IDT71421SA/LA Featu res * * High-speed access - Commercial: 20/25t35/55ns max. - Industrial: 55ns (max.) MASTER IDT71321 easily expands data bus width to 16-ormore-bits using SLAVE IDT71421

BCM2035

Abstract: R387 sld9630 Broadcom BCM2035 BCM203 MTW355 quanta quanta computer quanta mw1 915GM
Contextual Info: 1 2 3 4 5 6 7 8 5VPCU 5V / 3.3V / 12V 3VPCU Page : 31 +12V Centrino +5V MAX1999 DOTHAN/YONAH CELERON-M CLOCK GEN ICS ICS954201 3V_S5 A 5VSUS +3V VCC_CORE GMCH_VTT MW1 Page 4,5 INTEL SOCKET 479 CPU A Page 3 PCIE 3VSUS NVidia MXM HOST BUS 533MHz NV43 LANVCC

Contextual Info: Preliminary GS880E18/32/36T-11/11.5/100/80/66 100-Pin TQFP Commercial Temp Industrial Temp 512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 100 MHz–66 MHz 3.3 V VDD 3.3 V and 2.5 V I/O Features Flow Through / Pipeline Reads • FT pin for user-configurable flow through or pipelined operation

Contextual Info: Preliminary GS88018/32/36T-11/11.5/100/80/66 100-Pin TQFP Commercial Temp Industrial Temp 512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs Features interleave order with the Linear Burst Order LBO input. The Burst function need not be used. New addresses can be loaded

Contextual Info: OFFSET SYMBOL ^ CENTER OF GRAVITY ^DIMENSION _ 12 2 POS.1 tri r L 1.5 \ COMMENDED P.C.B LAYOUT fCONNECTOR SIDE) /// /// // / CO Li_ Li_ cT i I / / / '/// /// /// 3.05 4.1 4.5 5.0 7 .5 CONTACT DETAIL SCALE 10/1 NOTE 1.CONTACT PLATING GOLD(0.1 /urn MIN.) OVER

ARM946E-S

Abstract: ARMv5TE trap b10010 basic architecture of ARM Processors CP15 ARMv5TE tcm 1035
Contextual Info: ARM946E-S Revision: r1p1 Technical Reference Manual Copyright 2001, 2002 ARM Limited. All rights reserved. ARM DDI 0201B ARM946E-S Technical Reference Manual Copyright © 2001, 2002 ARM Limited. All rights reserved. Release Information Change history

ARM946E-S

Abstract: ARM946E-S IRAM b10010 ARM966E-S CP15
Contextual Info: ARM946E-S Technical Reference Manual ARM DDI 0155A ARM946E-S Technical Reference Manual Copyright ARM Limited 2000. All rights reserved. Release information Change history Date Issue Change 11th August 2000 A First release Proprietary notice ARM, the ARM Powered logo, Thumb and StrongARM are registered trademarks of ARM Limited.

7N60B

Contextual Info: nixYS AdvancedTechnical Information HiPerFAST IGBT V ¥ ces IXGA 7N60B IXGP 7N60B 600 V 14 A 1.5 V 150 ns ^C25 VCE sat typ % Maximum Ratings Symbol Test Conditions VCES Tj = 25°C to 150°C 600 V V CGR T,J = 25°C to 150°C; RGE = 1 MD 600 V VGES Continuous

IXFN180N20

Contextual Info: BIXYS AdvancedTechnical Information HiPerFET Power MOSFETs Single Die MOSFET IXFN 180N20 v DSS ^D25 P DS on *rr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions VDSS Tj =25°Cto150°C 200 V VD0R Tj = 25° C to 150° C; RGS= 1 M ii

Contextual Info: VDSS HiPerFET Power MOSFETs IXFH/IXFT/IXFX14N100 IXFH/IXFT/IXFX15N100 p ^D25 DS on 1000 V 14 A 0.75 Q 1000 V 15 A 0.70 ß trr <200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Preliminary data sheet Symbol Test Conditions v TJ Maximum Ratings

50n50

Contextual Info: HiPerFET Power MOSFETs VDSS IXFX50N50 IXFX 55N50 D ^D25 DS on 500 V 50 A 100 mQ 500 V 55 A 80 mQ trr <250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions V Tj =25°Cto150°C Tj = 25° C to 150° C; RQS= 1 M il 500 500 V V Continuous

Contextual Info: High Voltage MOSFET IXTA2N100 IXTP2N100 N-Channel Enhancement Mode v DSS ^D25 P DS on =1000 V =2A =7Q 9 Symbol Test Conditions V ¥ dss Tj =25°Cto150°C 1000 V VDGR Tj = 25° C to 150° C; RGS= 1 MQ 1000 V Continuous i2 0 V Transient 130 V VGS v GSM ^D25

Contextual Info: Preliminary GS880E18/32/36T-11/11.5/100/80/66 100-Pin TQFP Commercial Temp Industrial Temp 512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs Features 100 MHz–66 MHz 3.3 V VDD 3.3 V and 2.5 V I/O interleave order with the Linear Burst Order LBO input. The

Contextual Info: a ix Y S Advanced Technical Information IXGH 32N60CD1 VCES IC25 HiPerFAST IGBT with Diode V CE SAT typ Light Speed Series Symbol t f1(typ) Test Conditions Maximum Ratings =25° C to 150° C 600 V T, : 25°C to 150°C: FL 600 V Continuous ±20 V Transient

ARM9TDMI

Abstract: ARM922T 141 mrc basic architecture of ARM Processors B-30 CP15
Contextual Info: ARM922T Rev 0 Technical Reference Manual Copyright 2000, 2001 ARM Limited. All rights reserved. ARM DDI 0184B ARM922T Technical Reference Manual Copyright © 2000, 2001 ARM Limited. All rights reserved. Release Information Change history Date Issue Change

IXFX120N20

Contextual Info: nixYs HiPerFET Power MOSFETs IXFX120N20 VDSS = lD25 = ^DS on = Single M O S F E T Die ^ trr <250 ns 9D Preliminary data sheet 200V 120A v p « Symbol Test Conditions V vDGB Tj =25°Cto150°C Tj = 25° C to 150° C; RGS = 1 Mi2 200 200 V V v as vGSM Continuous

DWEP

Contextual Info: Fast Recovery Epitaxial Diodes FRED Chips VRRM min Type mA u TJ= 12S-C v .-w v * , mA DWEP 27 -02 DWEP 37 -02 DWEP 77 -02 200 100 150 500 0.2 0,35 0.65 5 11 20 54 91 244 85 70 70 DWEP DWEP DWEP DWEP DWEP DWEP DWEP DWEP 8 12 15 23 25 35 55 75 -06 -06 -06 -06

60N60A

Abstract: c5021-0
Contextual Info: ÖIXYS HiPerFAST IGBT with Diode IXGK 50N60AU1 V CES ^C25 V CE sat tfi Symbol Test Conditions V „„ T 25° C to 150° C T, 2 5 °C to 1 5 0 °C ;F L Maximum Ratings 600 V 600 V Continuous +20 V Transient +30 V T c = 25° C, limited by leads 75 A ^C90

Contextual Info: FRED, Rectifier Diode and Thyristor Chips in Planar Design Fast Recovery Epitaxial Diodes FRED Rectifier Diode and Thyristor Chips Power switches (IGBT, MOSFET, BJT, GTO) for applications in electronics are only as good as their associated free-wheeling

30N60BD

Contextual Info: nixYS Advanced Technical Information HiPerFAST IGBT with Diode IXGH 30N60BD1 IXGT 30N60BD1 ^fi typ Symbol Test Conditions VCEs Tj = 25°Cto 150UC 600 V v CGB T,J = 25cC to 150°C ;R Cat =1 MU 600 V v G ES Continuous +20 V VG EM Transient ±30 V ^C25 Tc =25°C

IXYS DS 145 12A

Abstract: IXYS DS 145 ld12a
Contextual Info: n ix Y S IXFH15N80Q IXFT15N80Q HiPerFET Power MOSFETs DSS = DS on = ID25 P Q Class 800 V 15 A 0.60 Q trr < 250 ns N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low Qg Preliminary data sheet Symbol Test Conditions V VoCR Tj = 25°Cto 150°C T,J = 25°Cto 150°C; RGS

Quanta AT8

Abstract: quanta u36 max8774 MCP51 MAX8774 AMD socket s1 C51M CX20549 max8774 pwm Samsung R418 kb3920
Contextual Info: 1 2 PCB STACK UP LAYER 1 : TOP RUN POWER SW LAYER 2 : SGND1 A 3 4 AC/BATT CONNECTOR PG 36,37 BATT CHARGER LAYER 3 : IN1 5 6 PG 38 PG 34 DC/DC +3VSUS +5VSUS LAYER 4 : IN2 DDRII 667mhz DDRII-SODIMM1 LAYER 5 : VCC PG 5 LAYER 7 : SGND2 DDRII 667mhz HT Link PCI-E