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IXFT15N80Q Datasheets (1)

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IXYS

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXFT15N80Q		IXYS	800V HiPerFET power MOSFET Q-class	Original	PDF	112.83KB	4

IXFT15N80Q Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IXYS DS 145 12A Abstract: IXYS DS 145 ld12a Contextual Info: n ix Y S IXFH15N80Q IXFT15N80Q HiPerFET Power MOSFETs DSS = DS on = ID25 P Q Class 800 V 15 A 0.60 Q trr < 250 ns N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low Qg Preliminary data sheet Symbol Test Conditions V VoCR Tj = 25°Cto 150°C T,J = 25°Cto 150°C; RGS	OCR Scan	ixfh15n80q ixft15n80q o-247ad o-268 +500a/m 1999ixys ixys ds 145 12a ixys ds 145 ld12a	PDF
sd 20n60 Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80 Contextual Info: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06	Original	o-247 plus247 isoplus247tm o-268 +16o-264 80n06-11 76n07-11 76n07-12 100n10 170n10 sd 20n60 ixfx 44n80 20n80 60n60 9n80 c2625 power mosfet 100n20 ixfh32n50 230n10 8n80	PDF
ne 22 mosfet Abstract: IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50 Contextual Info: HiPerFET Power MOSFETs L° w Gate-Ch TVPeS = S u „t9 Q Avalanche rated with Fast Intrinsic Diode VDSS Max. V p DSON Wort) Tc=25 C T_=25 C A m l) G on) ISOPLUS220™ (C) ISOPLUS247™V T0268 TO-263 TO-220 PLU S 247™ ^^ l3PAK (x > .4 TO-247 ‘ (H)	OCR Scan	isoplus220tm isoplus247tmv t0268 t0264 +16ot227b o-263 o-220 247tm o-247 o-204 ne 22 mosfet ixfh26n60q ixft12n100q ixfr100n25 ixfn26n90 fn230 ixfn36n60 n50p ixfn44n50u2 ixfn80n50	PDF

Catalog Datasheet

Type

Document Tags

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IXYS DS 145 12A

Abstract: IXYS DS 145 ld12a
Contextual Info: n ix Y S IXFH15N80Q IXFT15N80Q HiPerFET Power MOSFETs DSS = DS on = ID25 P Q Class 800 V 15 A 0.60 Q trr < 250 ns N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low Qg Preliminary data sheet Symbol Test Conditions V VoCR Tj = 25°Cto 150°C T,J = 25°Cto 150°C; RGS

OCR Scan

ixfh15n80q ixft15n80q o-247ad o-268 +5

PDF

sd 20n60

Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
Contextual Info: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06

Original

o-247 plus247 isoplus247tm o-268 +16

PDF

ne 22 mosfet

Abstract: IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50
Contextual Info: HiPerFET Power MOSFETs L° w Gate-Ch TVPeS = S u „t9 Q Avalanche rated with Fast Intrinsic Diode VDSS Max. V p DSON Wort) Tc=25 C T_=25 C A m l) G on) ISOPLUS220™ (C) ISOPLUS247™V T0268 TO-263 TO-220 PLU S 247™ ^^ l3PAK (x > .4 TO-247 ‘ (H)

OCR Scan

isoplus220tm isoplus247tmv t0268 t0264 +16

PDF