880E18 Search Results
880E18 Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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880E18A | GIGA | Synchronous Burst SRAMs, 8Meg, 512K x 18,2.5 V and 3.3 V | Original | 818.63KB | 27 |
880E18 Price and Stock
GSI Technology GS880E18CGT-250SRAM Chip Sync Dual 2.5V/3.3V 9M-Bit 512K x 18 5.5ns/2.5ns 100-Pin TQFP Tray - Trays (Alt: GS880E18CGT-250) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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GS880E18CGT-250 | Tray | 72 |
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Buy Now | ||||||
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GS880E18CGT-250 |
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Get Quote | ||||||||
GSI Technology GS880E18CGT-150VSRAM Chip Sync Dual 1.8V/2.5V 9M-Bit 512K x 18 7.5ns/3.8ns 100-Pin TQFP Tray - Trays (Alt: GS880E18CGT-150V) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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GS880E18CGT-150V | Tray | 24 Weeks | 72 |
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Buy Now | |||||
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GS880E18CGT-150V |
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Get Quote | ||||||||
GSI Technology GS880E18CGT-200VSRAM Chip Sync Dual 1.8V/2.5V 9M-Bit 512K x 18 6.5ns/3ns 100-Pin TQFP Tray - Trays (Alt: GS880E18CGT-200V) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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GS880E18CGT-200V | Tray | 24 Weeks | 72 |
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Buy Now | |||||
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GS880E18CGT-200V |
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Get Quote | ||||||||
GSI Technology GS880E18CGT-250VSRAM Chip Sync Dual 1.8V/2.5V 9M-Bit 512K x 18 5.5ns/3ns 100-Pin TQFP Tray - Trays (Alt: GS880E18CGT-250V) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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GS880E18CGT-250V | Tray | 24 Weeks | 72 |
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Buy Now | |||||
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GS880E18CGT-250V |
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Get Quote | ||||||||
GSI Technology GS880E18CGT-300SRAM Chip Sync Dual 2.5V/3.3V 9M-Bit 512K x 18 5ns/2.5ns 100-Pin TQFP Tray - Trays (Alt: GS880E18CGT-300) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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GS880E18CGT-300 | Tray | 24 Weeks | 72 |
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Buy Now | |||||
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GS880E18CGT-300 |
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Get Quote |
880E18 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: 880E18/32/36BT-333/300/250/200/150 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect DCD operation • 2.5 V or 3.3 V +10%/–10% core power supply |
Original |
GS880E18/32/36BT-333/300/250/200/150 100-Pin 100-lead | |
Contextual Info: Preliminary 880E18/32/36T-11/11.5/100/80/66 100-Pin TQFP Commercial Temp Industrial Temp 512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 100 MHz–66 MHz 3.3 V VDD 3.3 V and 2.5 V I/O Features Flow Through / Pipeline Reads • FT pin for user-configurable flow through or pipelined operation |
Original |
GS880E18/32/36T-11/11 100-Pin 80Mhz GS880E18/32/36T1 3/2000N; 3/2000O; 9/1999I 1999K880E18/32/36T1 | |
GS880E18B
Abstract: GS880E18BT-300 GS880E18BT-333 GS880E32B GS880E36B
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Original |
GS880E18/32/36BT-333/300/250/200/150 100-Pin 100-lead GS880E18B GS880E18BT-300 GS880E18BT-333 GS880E32B GS880E36B | |
Contextual Info: Preliminary 880E18/32/36T-11/11.5/100/80/66 100-Pin TQFP Commercial Temp Industrial Temp 512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs Features 100 MHz–66 MHz 3.3 V VDD 3.3 V and 2.5 V I/O interleave order with the Linear Burst Order LBO input. The |
Original |
GS880E18/32/36T-11/11 100-Pin and/08 2000O; 880E183236 880E18 80Mhz | |
Contextual Info: Preliminary 880E18/32/36T-11/11.5/100/80/66 100-Pin TQFP Commercial Temp Industrial Temp 512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs Features 100 MHz–66 MHz 3.3 V VDD 3.3 V and 2.5 V I/O interleave order with the Linear Burst Order LBO input. The |
Original |
GS880E18/32/36T-11/11 100-Pin 880E183236 880E18 80Mhz | |
437 bd
Abstract: GS880E36A GS880E18A GS880E18AT-225 GS880E18AT-250 GS880E32A
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Original |
GS880E18/32/36AT-250/225/200/166/150/133 100-Pin 100-lead 880E18A 437 bd GS880E36A GS880E18A GS880E18AT-225 GS880E18AT-250 GS880E32A | |
GS880E18BGT-150
Abstract: GS880E18B GS880E18BT-300 GS880E18BT-333 GS880E32B GS880E36B
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Original |
GS880E18/32/36BT-333/300/250/200/150 100-Pin 100-lead GS880E18BGT-150 GS880E18B GS880E18BT-300 GS880E18BT-333 GS880E32B GS880E36B | |
GS880E18B
Abstract: GS880E18BT-300 GS880E18BT-333 GS880E32B GS880E36B
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Original |
GS880E18/32/36BT-333/300/250/200/150 100-Pin 100-lead GS880E18B GS880E18BT-300 GS880E18BT-333 GS880E32B GS880E36B | |
Contextual Info: 880E18/32/36BT-333/300/250/200/150 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs n es ig Byte Write and Global Write Byte write operation is performed by using Byte Write enable BW input combined with one or more individual byte write signals (Bx). In addition, Global Write (GW) is available for |
Original |
GS880E18/32/36BT-333/300/250/200/150 100-Pin 100-lead | |
Contextual Info: Preliminary 880E18/32/36AT-250/225/200/166/150/133 100-Pin TQFP Commercial Temp Industrial Temp 512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect DCD operation |
Original |
GS880E18/32/36AT-250/225/200/166/150/133 100-Pin 100-lead 880E18A | |
GS880E18B
Abstract: GS880E32B GS880E36B
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Original |
GS880E18/32/36BT-250/225/200/166/150/133 100-Pin 100-lead GS880E18B GS880E32B GS880E36B | |
GS880E18A
Abstract: GS880E32A GS880E36A
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Original |
GS880E18/32/36AT-250/225/200/166/150/133 100-Pin 100-lead t50/133 880E18A GS880E18A GS880E32A GS880E36A | |
GS880E18A
Abstract: GS880E32A GS880E36A
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Original |
GS880E18/32/36AT-250/225/200/166/150/133 100-Pin 100-lead 880E18A GS880E18A GS880E32A GS880E36A |