18OHM Search Results

Contextual Info: 2/7 TAI-SAW TECHNOLOGY CO., LTD. Crystal Unit SMD 3.2x2.5 26.0MHz MODEL NO.: TZ2192A REV. NO.: 2 Revise: Rev. Rev. Page Rev. Account Date 1 2 N/A 3 Initial release ESR change to 18ohm 10/19/10 N/A 10/26/10 ECN- TAI-SAW TECHNOLOGY CO., LTD. Ref. No. Revised by

IRF9120

Abstract: STLC3055N E-STLC3055N CFL DC 12V TQFP44 tip off 0401 transistor circuit tip off 0401
Contextual Info: STLC3055N WLL & ISDN-TA SUBSCRIBER LINE INTERFACE CIRCUIT 1 • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ FEATURES Figure 1. Package MONOCHIP SLIC OPTIMISED FOR WLL & VoIP APPLICATIONS IMPLEMENT ALL KEY FEATURES OF THE BORSHT FUNCTION

Contextual Info: V59C1G02168QBP HIGH PERFORMANCE 2Gbit DDR2 SDRAM 8 BANKS X 16Mbit X 16 3 25A 25 DDR2-667 DDR2-800 DDR2-800 Clock Cycle Time tCK3 5ns 5ns 5ns Clock Cycle Time (tCK4) 3.75ns 3.75ns 3.75ns Clock Cycle Time (tCK5) 3ns 3ns 2.5ns Clock Cycle Time (tCK6) 3ns 2.5ns

9.1 b3

Contextual Info: V59C1256 404/804/164 QA*I HIGH PERFORMANCE 256Mbit DDR2 SDRAM, INDUSTRIAL TEMPERATURE 4 BANKS X 16Mbit X 4 (404) 4 BANKS X 8Mbit X 8 (804) 4 BANKS X 4Mbit X 16 (164) PRELIMINARY 37 3 25 DDR2-533 DDR2-667 DDR2-800 Clock Cycle Time (tCK3) 5ns 5ns 5ns Clock Cycle Time (tCK4)

9.1 b3

Contextual Info: PRELIMINARY V59C1256 404/804/164 QA HIGH PERFORMANCE 256Mbit DDR2 SDRAM 4 BANKS X 16Mbit X 4 (404) 4 BANKS X 8Mbit X 8 (804) 4 BANKS X 4Mbit X 16 (164) 37 3 25A 25 DDR2-533 DDR2-667 DDR2-800 DDR2-800 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns Clock Cycle Time (tCK4)

elko smd

Abstract: MQE vco murata vco module mqe mqe 601 MQE MURATA vco MQE MURATA 601-902 MURATA MQE VCO ALPS ELKO smd CAPACITOR MQE MURATA 601-902 data
Contextual Info: Wireless Components 10-pin Single PLL PMB2341 Version Application Note 08.99 preliminary CONFIDENTIAL Revision History: Current Version: 06.99 Previous Version:Data Sheet Page in previous Version Page (in current Version) Subjects (major changes since last revision)

uln2503

Abstract: irf250 datasheet METAL-CLAD Wire wound resistors 1000v 200w Transistor ULN400 rara irn W203 ULN200 transistor irf250 IRF 024
Contextual Info: Resistors And Resistive Applications IRN, ULN, IRF, ULF SLIM PROFILE WIRE WOUND, METAL CLAD RESISTORS The IRN N=narrow and flat & IRF(F=flat) models are metal-clad, wire-wound, high-power, extremely low inductance resistors designed for industrial and other applications where space is at a premium and performance is a must. The ULN and

k4t51163qg

Abstract: K4T51083Qg
Contextual Info: K4T51083QG K4T51163QG DDR2-1066 SDRAM 512Mb G-die DDR2-1066 SDRAM Specification 60FBGA with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

k4t51163qg

Contextual Info: K4T51043QG K4T51083QG K4T51163QG DDR2 SDRAM 512Mb G-die DDR2 SDRAM Specification 60FBGA & 84FBGA with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

Contextual Info: Rev. 1.03, Feb. 2010 K4T56163QN 256Mb N-die DDR2 SDRAM 84FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

K4T51163QI

Abstract: K4T51163QI-HC K4T51163QI-HCLF7
Contextual Info: DDR2 SDRAM K4T51163QI 512Mb I-die DDR2 SDRAM Specification 84FBGA with Halogen-Free & Lead-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE

K4T51083QI

Abstract: K4T51083QI-HC K4T51043QI K4T51163QI-HC k4t51163qi
Contextual Info: Rev. 1.0, Mar. 2010 K4T51043QI K4T51083QI K4T51163QI 512Mb I-die DDR2 SDRAM 60 & 84FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

Contextual Info: 512Mb M-die DDR-II SDRAM Target 512Mb M-die DDR-II SDRAM Specification Version 0.11 Rev. 0.11 Apr. 2002 Page 1 of 65 512Mb M-die DDR-II SDRAM Target Contents 1. Key Feature 2. Package Pinout & Addressing 2.1 Package Pintout 2.2 Input/Output Function Description

K4T1G164QQ

Contextual Info: Industrial DDR2 SDRAM K4T1G164QQ 1Gb Q-die DDR2 SDRAM Specification 84FBGA with Lead-Free & Halogen-Free RoHS compliant Industrial temp. -40’c to 95’c INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

Contextual Info: DDR2 SDRAM K4T28163QO 128Mb O-die DDR2 SDRAM Specification 84FBGA with Halogen-Free & Lead-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE

K4T1G164QE-HC

Contextual Info: K4T1G044QE K4T1G084QE K4T1G164QE DDR2 SDRAM 1Gb E-die DDR2 SDRAM Specification 60FBGA & 84FBGA with Lead-Free & Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE

k4t51163qg

Abstract: k4t51163qg-hc
Contextual Info: K4T51043QG K4T51083QG K4T51163QG DDR2 SDRAM 512Mb G-die DDR2 SDRAM Specification 60FBGA & 84FBGA with Pb-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

flyback transformer 4kV

Abstract: morocco 9648 MGPWG-00007 step down trafo TRAFO STEP UP trafo 2kv ring generator SMD transformer ptc application note byt 78v conversion table PTC
Contextual Info: AN2132 APPLICATION NOTE STLC3075 VERY LOW SINGLE SUPPLY SLIC FOR WLL APPLICATION IN FLY-BACK CONFIGURATION The STLC3075 is a slic device specially designed for WLL Wireless Local Loop and ISDN Terminal Adapters. 1 WIRELESS LOCAL LOOP SYSTEM Figure 1. The main characteristics of this device consist in the possibility to:

MC0603SAF1131T5E

Contextual Info: REVISIONS M ulticom p A LL RIGHTS RESERVED. NO PORTION OF THIS PUBLICATION, WHETHER IN WHOLE OR IN PART CAN BE REPRODUCED WITHOUT THE EXPRESS WRITTEN CONSENT OF SPC TECHNOLOGY. DCP # REV DOC. NO. SPC—F005 DESCRIPTION 1991 DRAWN RELEASED JN DATE » Effective: 7 / 8 / 0 2

STP1080A

Abstract: IEEE1149
Contextual Info: STP1080A July 1997 UltraSPARC -I Data Buffer UDB-I DATA SHEET Companion Device for 167/200 MHz UltraSPARC-I Systems DESCRIPTION The UDB-I is a data buffer device used in UltraSPARC-I systems to connect the CPU and its external SRAM cache bus to the system bus:

SO-DIMM 144-pin

Contextual Info: Preliminary Spec. MITSUBISHI LSIs Some contents are subject to change without notice. MH1S64CXJJ-12,-15 67108864-BIT 1048576-WORD BY 64-BIT SynchronousDRAM Serial PD Operation Clock and Data Conventions Data states onthe SDA line can change only during SCL LOW.SDA state changes during SCL HIGH are reserved

Contextual Info: HY5PS12423 L F HY5PS12823(L)F HY5PS121623(L)F 512Mb DDR-II SDRAM HY5PS12423(L)F HY5PS12823(L)F Rev. 0.52/Nov. 02 1 HY5PS12423(L)F HY5PS12823(L)F HY5PS121623(L)F REVISION HISTORY Revision No. Revision Date Page of Revsion Description of Change 0.2 June.02 page3

cx3804

Abstract: pegatron pegatron A35 A35 pegatron diode c0510 pegatron a24 Cx3808 q8607 IT8752E tpc8118
Contextual Info: 5 4 3 M52V BLOCK DIAGRAM 2 1 Power CPU VCORE PENRYN DC&QC Page 80 System Page 3~5 D D Page 81 FSB 1066MHz 1.5VS & 1.05VS LCD Panel Page 82 Page 45 PCIE x16 MXM CRT DDR2 800MHz CANTIGA nVIDIA NB9x Page 46 DDR & VTT DDR2 So-DIMM Page 83 Page 7~9 Page 70 +2.5VS

smd diode c539

Abstract: samsung sens r20 smd diode marking C535 toshiba dvd hdd schematic diagram RA57 1400l toshiba hdd schematic board st smd diode marking code C701 SMD RA57 logitech 3 button
Contextual Info: 5 Schematic Diagrams and PCB Silkscreen 5-1-5 Parts List SEC Code Location Description and Specification J504 J503 J502 PCMCIA SOCKET J514 J521 J506 J500 3701-001026 3701-001035 3701-001036 3709-001119 3710-000253 3711-003392 3711-003987 3722-000218 15P,2R,FEMALE,SMD-S,AUF