18APR05 Search Results

609-2641 connector

Abstract: 609-5041 609-2041 609-2641 1658526-2 tyco ipm
Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. DIST REVISIONS GP 00 LTR B DATE DWN APVD 18APR05 sw JG DESCRIPTION REVISED PER EC 0 S 1 3 - 0 1 17-05 1. 20 POSITION CONNECTOR ASSEMBLY SHOWN,

Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 6 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. LOC DIST AD 25 R E V IS IO N S LTR 01 85.29 [3.358]' HOUSING -0.94+0.05 TYP [.037+.002] 1-2.41 - - 0.08 0 . 1 .095 + .003 -.004

Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 6 4 2 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. LOC DIST AD 25 R E VIS IO N S LTR 01 54.36[2.140] DESCRIPTION REVISED PER E C O - 0 7 - 01 281 9 DATE DWN APVD 2 7 JU N 07 DH

DG9431

Abstract: DG9431DV-T1 DG9431DY-T1 HP4192A
Contextual Info: DG9431 Vishay Siliconix Low-Voltage Single SPDT Analog Switch FEATURES BENEFITS D Low Voltage Operation +2.7 Available to +5 V D Low On-Resistance - rDS(on): 20 W D Fast Switching - tON : 35 ns, tOFF: 20 ns D Low Leakage - ICOM(on): 200-pA max D Low Charge Injection - QINJ: 1 pC

Si3458DV-T1

Abstract: Si3458DV
Contextual Info: Si3458DV Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) 60 FEATURES rDS(on) (W) ID (A) 0.10 @ VGS = 10 V 3.2 0.13 @ VGS = 4.5 V 2.8 D TrenchFETr Power MOSFET D 100% Rg Tested D Lead (Pb)-Free Version is RoHS Compliant (1, 2, 5, 6) D TSOP-6

Si5904DC

Abstract: Si5904DC-T1
Contextual Info: Si5904DC Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.075 @ VGS = 4.5 V "4.2 0.134 @ VGS = 2.5 V "3.1 D TrenchFETr Power MOSFET D 2.5-V Rated D Lead (Pb)-Free Version is RoHS Compliant Available

Si2301

Abstract: Si2301BDS Si2301BDS-T1 Si2301BDS SPICE Device Model
Contextual Info: Si2301BDS Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.100 @ VGS = −4.5 V −2.4 0.150 @ VGS = −2.5 V −2.0 VDS (V) −20 20 D RoH Lead (Pb)-Free Version is RoHS Compliant Available TO-236 (SOT-23) G 1 3

SI4435BDY-T1

Abstract: Si4435BDY
Contextual Info: Si4435BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.020 @ VGS = −10 V −9.1 0.035 @ VGS = −4.5 V −6.9 D TrenchFETr Power MOSFET D Advanced High Cell Density Process D Lead (Pb)-Free Version is RoHS

Si7409DN

Abstract: Si7409DN-T1
Contextual Info: Si7409DN Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.019 @ VGS = −4.5 V −11 0.031 @ VGS = −2.5 V −8.5 Qg (Typ) 25 D TrenchFETr Power MOSFET Available D New Low Thermal Resistance PowerPAKrPackage with Low 1.07-mm Profile

Si7403BDN

Contextual Info: SPICE Device Model Si7403BDN Vishay Siliconix P-Channel 20V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si7682DP

Contextual Info: SPICE Device Model Si7682DP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SI3455DV-T1

Abstract: Si3455DV
Contextual Info: Si3455DV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 30 rDS(on) (W) ID (A) 0.100 @ VGS = −10 V "3.5 0.190 @ VGS = −4.5 V "2.5 D TrenchFETr Power MOSFET D Lead (Pb)-Free Version is RoHS Compliant Available (4) S TSOP-6

Si4936DY

Abstract: Si4936DY-T1
Contextual Info: Si4936DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.037 @ VGS = 10 V 5.8 0.055 @ VGS = 4.5 V 4.7 D TrenchFETr Power MOSFET D Lead (Pb)-Free Version is RoHS Compliant D1 SO-8 S1 1 8 D1 G1 2 7 D1

Contextual Info: Si4936ADY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.036 @ VGS = 10 V 5.9 0.053 @ VGS = 4.5 V 4.9 D TrenchFETr Power MOSFET D Lead (Pb)-Free Version is RoHS Compliant D1 Available D2 SO-8 S1 1

Contextual Info: Si3455DV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 30 rDS(on) (W) ID (A) 0.100 @ VGS = −10 V "3.5 0.190 @ VGS = −4.5 V "2.5 D TrenchFETr Power MOSFET D Lead (Pb)-Free Version is RoHS Compliant Available (4) S TSOP-6

Contextual Info: Si7409DN Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.019 @ VGS = −4.5 V −11 0.031 @ VGS = −2.5 V −8.5 Qg (Typ) 25 D TrenchFETr Power MOSFET Available D New Low Thermal Resistance PowerPAKrPackage with Low 1.07-mm Profile

Contextual Info: Si7409DN Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.019 @ VGS = −4.5 V −11 0.031 @ VGS = −2.5 V −8.5 Qg (Typ) 25 D TrenchFETr Power MOSFET Available D New Low Thermal Resistance PowerPAKrPackage with Low 1.07-mm Profile

Contextual Info: Si7415DN Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −60 rDS(on) (W) ID (A) 0.065 @ VGS = −10 V −5.7 0.110 @ VGS = −4.5 V −4.4 D TrenchFETr Power MOSFET D New PowerPAKr Package Available − Low Thermal Resistance, RthJC

Contextual Info: Si4966DY Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.025 @ VGS = 4.5 V "7.1 0.035 @ VGS = 2.5 V "6.0 D TrenchFETr Power MOSFET D 2.5-V Rated D Lead (Pb)-Free Version is RoHS Compliant D1 SO-8

71247

Abstract: SI4404DY
Contextual Info: Si4404DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0065 @ VGS = 10 V 23 0.008 @ VGS = 4.5 V 17 D TrenchFETr Power MOSFET D 100% Rg Tested D Lead (Pb)-Free Version is RoHS Compliant D SO-8 S 1 8 D

Contextual Info: Si4963DY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.033 @ VGS = −4.5 V −6.2 0.050 @ VGS = −2.5 V −5 D TrenchFETr Power MOSFET D Lead (Pb)-Free Version is RoHS Compliant S1 Available

Contextual Info: Si4936DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.037 @ VGS = 10 V 5.8 0.055 @ VGS = 4.5 V 4.7 D TrenchFETr Power MOSFET D Lead (Pb)-Free Version is RoHS Compliant D1 SO-8 S1 1 8 D1 G1 2 7 D1

Contextual Info: SiP21103 Vishay Siliconix New Product 250-mA Ultra Low-Noise LDO Regulator With Discharge Option FEATURES D D D D D D D D D D D D D Ultra Low Dropout—250 mV at 250-mA Load Ultra Low Noise—30 mVRMS 10-Hz to 100-kHz Shutdown Control 130-mA Ground Current at 250-mA Load

Si6874EDQ

Contextual Info: Si6874EDQ Vishay Siliconix Dual N-Channel 20-V D-S MOSFET, Common Drain FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.026 @ VGS = 4.5 V 6.5 0.031 @ VGS = 2.5 V 5.8 0.039 @ VGS = 1.8 V 5.0 D 3000-V ESD Protection D Lead (Pb)-Free Version is RoHS