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SI7409DN Datasheets (3)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SI7409DN		Vishay Siliconix	MOSFETs	Original	PDF	54.35KB	5
Si7409DN		Vishay Telefunken	P-channel 30-v (d-s) Mosfet	Original	PDF	43.47KB	5
Si7409DN SPICE Device Model		Vishay	P-Channel 30-V (D-S) MOSFET	Original	PDF	178.58KB	3

SI7409DN Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
PowerPAK 1212-8 Abstract: Si7409DN Si7409DN-T1 Si7409ADN Contextual Info: Specification Comparison Vishay Siliconix Si7409ADN vs. Si7409DN Description: Single P-Channel, - 30 V D-S MOSFET Package: PowerPAK 1212-8 Pin Out: Identical Part Number Replacements: Si7409ADN-T1-E (Lead (Pb)-free) Replaces Si7409DN-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted	Original	si7409adn si7409dn si7409adn-t1-e si7409dn-t1 +210-nov-06 powerpak 1212-8	PDF
Si7409DN Abstract: Si7409DN-T1 Contextual Info: Si7409DN New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.019 @ VGS = - 4.5 V - 11 0.031 @ VGS = - 2.5 V - 8.5 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile	Original	si7409dn 07-mm si7409dn-t1 s-03372--rev +103-mar-03	PDF
Si7409DN Abstract: Si7409DN-T1 Contextual Info: Si7409DN Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.019 @ VGS = −4.5 V −11 0.031 @ VGS = −2.5 V −8.5 Qg (Typ) 25 D TrenchFETr Power MOSFET Available D New Low Thermal Resistance PowerPAKrPackage with Low 1.07-mm Profile	Original	si7409dn 07-mm si7409dn-t1 si7409dn-t1--e3 +118-jul-08	PDF
41068 Abstract: Si7409DN Si7409DN-T1 Contextual Info: Si7409DN Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.019 @ VGS = −4.5 V −11 0.031 @ VGS = −2.5 V −8.5 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKrPackage with Low 1.07-mm Profile	Original	si7409dn 07-mm si7409dn-t1 s-41068--rev +231-may-04 41068	PDF
Contextual Info: Si7409DN Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.019 @ VGS = −4.5 V −11 0.031 @ VGS = −2.5 V −8.5 Qg (Typ) 25 D TrenchFETr Power MOSFET Available D New Low Thermal Resistance PowerPAKrPackage with Low 1.07-mm Profile	Original	si7409dn 07-mm si7409dn-t1 si7409dn-t1--e3 +2s-50695--rev 18-apr-05	PDF
Contextual Info: Si7409DN Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.019 @ VGS = −4.5 V −11 0.031 @ VGS = −2.5 V −8.5 Qg (Typ) 25 D TrenchFETr Power MOSFET Available D New Low Thermal Resistance PowerPAKrPackage with Low 1.07-mm Profile	Original	si7409dn 07-mm si7409dn-t1 si7409dn-t1--e3 +108-apr-05	PDF
Si7409DN Contextual Info: SPICE Device Model Si7409DN Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	si7409dn 29-aug-03	PDF
Si7409DN Abstract: TR-2450 mosfet Vds 30 Vgs 25 Contextual Info: SPICE Device Model Si7409DN Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	si7409dn 24-may-04 tr-2450 mosfet vds 30 vgs 25	PDF
Si7409DN Abstract: diode Rl 257 Contextual Info: SPICE Device Model Si7409DN Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	si7409dn 18-jul-08 diode rl 257	PDF