SI7403BDN Search Results

Si7403BDN

Contextual Info: SPICE Device Model Si7403BDN Vishay Siliconix P-Channel 20V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si7403BDN

Abstract: Si7403BDN-T1-E3 Si7403BDN-T1-GE3
Contextual Info: Si7403BDN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.074 at VGS = - 4.5 V - 8c 0.110 at VGS = - 2.5 V - 7.4 Qg (Typ.) 5.6 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET: 2.5 V Rated

Contextual Info: Si7403BDN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.074 at VGS = - 4.5 V - 8c 0.110 at VGS = - 2.5 V - 7.4 Qg (Typ.) 5.6 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET: 2.5 V Rated

Contextual Info: Si7403BDN New Product Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) −20 FEATURES rDS(on) (W) ID (A) 0.074 @ VGS = −4.5 V −8c 0.110 @ VGS = −2.5 V −7.4 Qg (Typ) 5 6 nC 5.6 D TrenchFETr Power MOSFET: 2.5-V Rated D RoHS Compliant

Si7403BDN-T1-E3

Abstract: 1212-8 PowerPAK 1212-8 Si7403BDN Si7403DN
Contextual Info: Specification Comparison Vishay Siliconix Si7403BDN vs. Si7403DN Description: P-Channel, 20 V D-S MOSFET Package: PowerPAK 1212-8 Pin Out: Identical Part Number Replacements: Si7403BDN-T1-E3 Replaces Si7403DN-T1-E3 Si7403BDN-T1 Replaces Si7403DN-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Contextual Info: Si7403BDN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.074 at VGS = - 4.5 V - 8c 0.110 at VGS = - 2.5 V - 7.4 Qg (Typ.) 5.6 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET: 2.5 V Rated

Si7403BDN

Contextual Info: SPICE Device Model Si7403BDN Vishay Siliconix P-Channel 20V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

PowerPAK 1212-8

Abstract: Si7403BDN
Contextual Info: Si7403BDN New Product Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) −20 FEATURES rDS(on) (W) ID (A) 0.074 @ VGS = −4.5 V −8c 0.110 @ VGS = −2.5 V −7.4 Qg (Typ) 5 6 nC 5.6 D TrenchFETr Power MOSFET: 2.5-V Rated D RoHS Compliant

Contextual Info: Si7403BDN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.074 at VGS = - 4.5 V - 8c 0.110 at VGS = - 2.5 V - 7.4 Qg (Typ.) 5.6 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET: 2.5 V Rated

U 2840

Abstract: AN609 Si7403BDN 82840
Contextual Info: Si7403BDN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,

Contextual Info: Si7403BDN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.074 at VGS = - 4.5 V - 8c 0.110 at VGS = - 2.5 V - 7.4 Qg (Typ.) 5.6 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET: 2.5 V Rated

Contextual Info: Si7403BDN New Product Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) −20 FEATURES rDS(on) (W) ID (A) 0.074 @ VGS = −4.5 V −8c 0.110 @ VGS = −2.5 V −7.4 Qg (Typ) 5 6 nC 5.6 D TrenchFETr Power MOSFET: 2.5-V Rated D RoHS Compliant

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

BS250KL-TR1-E3

Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
Contextual Info: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8

GS 069

Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
Contextual Info: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no

si7121

Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®

220v AC voltage stabilizer schematic diagram

Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585

Diode SOT-23 marking 15d

Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
Contextual Info: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs

GS-22-008 EUROPEAN DIRECTIVES

Abstract: w25q32b w25q32
Contextual Info: ADSP-BF609 EZ-KIT Lite Evaluation System Manual Revision 1.0, March 2012 Part Number 82-000269-01 Analog Devices, Inc. One Technology Way Norwood, Mass. 02062-9106 a Copyright Information 2012 Analog Devices, Inc., ALL RIGHTS RESERVED. This document may not be reproduced in any form without prior, express written